CASTALDINI, ANTONIO

CASTALDINI, ANTONIO  

Personale tecnico amm.vo  

Castaldini A.; A.CASTALDINI; Antonio Castaldini  

Mostra records
Risultati 1 - 20 di 60 (tempo di esecuzione: 0.038 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects Carapezzi, Stefania; Castaldini, Antonio; Fabbri, Filippo; Rossi, Francesca; Negri, Marco; Salvia...ti, Giancarlo; Cavallini, Anna 2016-01-01 JOURNAL OF MATERIALS CHEMISTRY. C - 1.01 Articolo in rivista -
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices Carapezzi, Stefania; Castaldini, Antonio; Mancarella, Fulvio; Poggi, Antonella; Cavallini, Anna 2016-01-01 ACS APPLIED MATERIALS & INTERFACES - 1.01 Articolo in rivista -
Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms Stefania Carapezzi;Antonio Castaldini;Alessia Irrera;Anna Cavallini 2014-01-01 - A.Cavallini and S. Estreicher 4.01 Contributo in Atti di convegno -
Investigation of deep level defects in CdTe thin films H. Shankar;A. Castaldini;E. Dieguez;E. Dauksta;A. Medvid;S. Rubio;A. Cavallini 2014-01-01 - A. Cavallini andS Estreicher 4.01 Contributo in Atti di convegno -
Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices Geeta Rani Mutta;Giulia Venturi;Antonio Castaldini;Anna Cavallini;Matteo Meneghini;Enrico Zanoni;...Gaudenzio Meneghesso;Dandan Zhu;Colin Humphreys 2014-01-01 - - 4.01 Contributo in Atti di convegno -
Properties of Si nanowires as a function of their growth conditions Anna Cavallini;Stefania Carapezzi;Antonio Castaldini;Alessia Irrera 2014-01-01 PHYSICA. B, CONDENSED MATTER - 1.01 Articolo in rivista -
Electronic Level Scheme in Boron- and Phosphorus-Doped Silicon Nanowires K. Sato; A. Castaldini; N. Fukata; A. Cavallini 2012-01-01 NANO LETTERS - 1.01 Articolo in rivista -
Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing Franc J.; Belas E.; Bugar M.; Hlidek P; Grill R.; Yang G.; Cavallini A.; Fraboni B.; Castaldini A....; Assali S. 2012-01-01 JOURNAL OF INSTRUMENTATION - 1.01 Articolo in rivista -
Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy A. Cavallini; L. Polenta; A. Castaldini 2010-01-01 MICROELECTRONICS RELIABILITY - 1.01 Articolo in rivista -
Electrical properties of the sensitive side in Si edgeless detectors E. Verbitskaya; G. Ruggiero; I. Eremin; I. Ilyashenko; A. Cavallini; A. Castaldini; G. Pellegrini...; M. Lozano; S. Golubkov; N. Egorov; K. Konkov; T. Tuuva; 2009-01-01 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT - 4.01 Contributo in Atti di convegno -
False Surface-Trap Signature Induced by Buffer Traps in AlGaN-GaN HEMT G. Verzellesi; M. Faqir; A. Chini; F. Fantini; G. Meneghesso; E. Zanoni; F. Danesin; F. Zanon; F.... Rampazzo; F.A. Marino; A. Cavallini; A. Castaldini 2009-01-01 IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS / SPONSORED BY THE IEEE ELECTRONIC DEVICES SOCIETY AND THE IEEE RELIABILITY SOCIETY - 4.01 Contributo in Atti di convegno -
X-Ray Irradiation Effects on the Trapping Properties of Cd(1-x)ZnxTe Detectors A. Cavallini; B. Fraboni; A. Castaldini; L. Pasquini; P. Siffert 2009-01-01 - IEEE, USA 4.02 Riassunto (Abstract) -
Advanced model of silicon edgeless detector operation Verbitskaya E.; Eremin I.; Ruggiero G.; Cavallini A.; Castaldini A.; Pellegrini G.; Lozano M.; Go...lubkov S.; Egorov N.; 2008-01-01 - s.n 4.01 Contributo in Atti di convegno -
Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes L. Rigutti;A. Castaldini; A. Cavallini 2008-01-01 PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS - 1.01 Articolo in rivista -
On the UV responsivity of neutron irradiated 4H-SiC A. Cavallini; A. Castaldini; F. Nava 2008-01-01 APPLIED PHYSICS LETTERS - 1.01 Articolo in rivista -
Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes L. Rigutti; M. Meneghini; A. Castaldini; A. Cavallini 2008-01-01 SEMICONDUCTOR SCIENCE AND TECHNOLOGY - 1.01 Articolo in rivista -
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs M. Faqira; G. Verzellesi; F. Fantini; F. Danesin; F. Rampazzo; G. Meneghesso;E. Zanoni; A. Cavall...ini; A. Castaldini; N. Labat ; A. Touboul; C. Dua 2007-01-01 MICROELECTRONICS RELIABILITY - 1.01 Articolo in rivista -
Defect characterization in GaN: Possible influence of dislocations in the yellow-band features L. Polenta; A.Castaldini; A.Cavallini 2007-01-01 JOURNAL OF APPLIED PHYSICS - 1.01 Articolo in rivista -
Interaction between oxygen and dislocations in p-type silicon D. Cavalcoli; A.Castaldini; A. Cavallini 2007-01-01 APPLIED PHYSICS. A, MATERIALS SCIENCE & PROCESSING - 1.01 Articolo in rivista -
Photocurrent and Surface Photovoltage Spectroscopy Investigations of CdTe-Based Compounds A. Cavallini; A. Castaldini; D. Cavalcoli; B. Fraboni 2007-01-01 IEEE TRANSACTIONS ON NUCLEAR SCIENCE - 1.01 Articolo in rivista -