This paper explores the cold field emission (CFE) properties of SiC nanowire (NW) arrays. The CFE currents were studied in the dark and under ultra-violet (UV) irradiation conditions. An increase in CFE current was observed when the SiC NW arrays were illuminated, with a consequent decrease in the values of the turn-on field and the threshold field. Furthermore, while dark CFE currents were well described by the standard Fowler-Nordheim (FN) theory for metals, the photo-enhanced CFE currents showed nonlinearity in FN plots. Specifically, a voltage range of current saturation appeared, which is appealing for nanotechnological applications, and it is indeed an essential prerequisite for realizing devices such as FE photocathodes.
Carapezzi, S., Castaldini, A., Fabbri, F., Rossi, F., Negri, M., Salviati, G., et al. (2016). Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects. JOURNAL OF MATERIALS CHEMISTRY. C, 4(35), 8226-8234 [10.1039/C6TC02625G].
Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects
CARAPEZZI, STEFANIA;CASTALDINI, ANTONIO;CAVALLINI, ANNA
2016
Abstract
This paper explores the cold field emission (CFE) properties of SiC nanowire (NW) arrays. The CFE currents were studied in the dark and under ultra-violet (UV) irradiation conditions. An increase in CFE current was observed when the SiC NW arrays were illuminated, with a consequent decrease in the values of the turn-on field and the threshold field. Furthermore, while dark CFE currents were well described by the standard Fowler-Nordheim (FN) theory for metals, the photo-enhanced CFE currents showed nonlinearity in FN plots. Specifically, a voltage range of current saturation appeared, which is appealing for nanotechnological applications, and it is indeed an essential prerequisite for realizing devices such as FE photocathodes.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
