A new approach for TCAD modeling of CNT FET gas sensors is presented, whose key feature is the use of an effective Gaussian DOS to mimic the 1D CNT DOS. The TCAD procedure has been applied to the simulation of a suspended CNT FET for NO2sensing. Our results indicate that the model is able to provide I-V characteristics in excellent agreement with the experimental data, both before and after gas exposure.

3D TCAD modeling of NO2CNT FET sensors

Stefania Carapezzi;Susanna Reggiani;Elena Gnani;Antonio Gnudi
2018

Abstract

A new approach for TCAD modeling of CNT FET gas sensors is presented, whose key feature is the use of an effective Gaussian DOS to mimic the 1D CNT DOS. The TCAD procedure has been applied to the simulation of a suspended CNT FET for NO2sensing. Our results indicate that the model is able to provide I-V characteristics in excellent agreement with the experimental data, both before and after gas exposure.
48th European Solid-State Device Research Conference (ESSDERC) : Dresden, 3-6 september 2018
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Stefania Carapezzi; Sebastian Eberle; Susanna Reggiani; Elena Gnani; Cosmin Roman; Christofer Hierold; Antonio Gnudi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/669258
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