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CARAPEZZI, STEFANIA

CARAPEZZI, STEFANIA  

CENTRO RICERCA SISTEMI ELETTRONICI INGEGN.INF. E TELECOM."ERCOLE DE CASTRO"  

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Risultati 1 - 20 di 26 (tempo di esecuzione: 0.05 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
Electron mobility of strained InGaAs long-channel MOSFETs: From scattering rates to TCAD model Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A. 2020-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
TCAD Simulation Framework of Gas Desorption in CNT FET NO2Sensors Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A. 2020-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista Manuscript2.pdf
On the electron mobility of strained InGaAs channel MOSFETs Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A. 2019-01-01 - Editions Frontieres 4.01 Contributo in Atti di convegno -
2D scaling behavior of nanotextured GaN surfaces: A case study of hillocked and terraced surfaces Mutta, Geeta Rani*; Carapezzi, Stefania 2018-01-01 APPLIED SURFACE SCIENCE - 1.01 Articolo in rivista -
3D TCAD modeling of NO2CNT FET sensors Stefania Carapezzi; Sebastian Eberle; Susanna Reggiani; Elena Gnani; Cosmin Roman; Christofer Hie...rold; Antonio Gnudi 2018-01-01 - Institute of Electrical and Electronics Engineers ( IEEE ) ; Curran Associates 4.01 Contributo in Atti di convegno Carapezzi_CNT.pdf
Spatial point pattern analysis of the local current distribution on the surface of multi-tip field emitters Filippov, S.V.; Carapezzi, S.; Popov, E.O.; Kolosko, A.G. 2018-01-01 JOURNAL OF PHYSICS. CONFERENCE SERIES Institute of Physics Publishing 4.01 Contributo in Atti di convegno -
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri,... P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F.M.; Verzellesi, G. 2017-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Palestri, Pierpaolo; Reggiani, Susanna; Gnan...i, Elena 2017-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy Orrù, Marta; Repiso, Eva; Carapezzi, Stefania; Henning, Alex; Roddaro, Stefano; Franciosi, Alfons...o; Rosenwaks, Yossi; Cavallini, Anna; Martelli, Faustino; Rubini, Silvia 2016-01-01 ADVANCED FUNCTIONAL MATERIALS - 1.01 Articolo in rivista -
Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects Carapezzi, Stefania; Castaldini, Antonio; Fabbri, Filippo; Rossi, Francesca; Negri, Marco; Salvia...ti, Giancarlo; Cavallini, Anna 2016-01-01 JOURNAL OF MATERIALS CHEMISTRY. C - 1.01 Articolo in rivista -
Nanostructured surfaces investigated by quantitative morphological studies Perani, Martina; Carapezzi, Stefania; Mutta, Geeta Rani; Cavalcoli, Daniela 2016-01-01 NANOTECHNOLOGY - 1.01 Articolo in rivista -
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices Carapezzi, Stefania; Castaldini, Antonio; Mancarella, Fulvio; Poggi, Antonella; Cavallini, Anna 2016-01-01 ACS APPLIED MATERIALS & INTERFACES - 1.01 Articolo in rivista -
Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures Mutta, Geeta Rani; Carapezzi, Stefania; Vilalta-Clemente, Arantxa; Kauffman, Nils A.K.; Grandjean..., Nicolas; Cavallini, Anna 2016-01-01 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING - 1.01 Articolo in rivista -
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Reggiani, Susanna; Gnani, Elena 2016-01-01 - Editions Frontieres 4.01 Contributo in Atti di convegno -
Bundling of GaAs Nanowires: A Case of Adhesion-Induced Self-Assembly of Nanowires Stefania Carapezzi;Giacomo Priante;Vincenzo Grillo;Laurent Montès;Silvia Rubini;Anna Cavallini 2014-01-01 ACS NANO - 1.01 Articolo in rivista -
Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms Stefania Carapezzi;Antonio Castaldini;Alessia Irrera;Anna Cavallini 2014-01-01 - A.Cavallini and S. Estreicher 4.01 Contributo in Atti di convegno -
Electron Beam Patterning of GaAs Nanowires: Tailoring the Morphology of Semiconductor Nanowire Arrays for a Bio-mimetic Functionalization Approach Stefania Carapezzi; Giacomo Priante; Silvia Rubini; Anna Cavallini 2014-01-01 - - 4.02 Riassunto (Abstract) -
Fine-Tuning Design of GaAs Nanowire Arrays: from the Tweezing Effect of Electron Beam to the Adhesion-Induced Lateral Collapsing for the Realization of Sophisticated 3D Architectures Stefania Carapezzi; Giacomo Priante; Silvia Rubini; Anna Cavallini 2014-01-01 - - 4.02 Riassunto (Abstract) -
GaAs nanowire self-assembly: tailoring nanowire arrays towards surface functionalization Stefania Carapezzi; Giacomo Priante; Laurent Montès; Silvia Rubini; Anna Cavallini 2014-01-01 - - 4.02 Riassunto (Abstract) -
Impact of Processing Conditions on the Level Scheme of Silicon Nanowires Synthesized by Top-Down Techniques Stefania Carapezzi; Alessia Irrera; Vladimir Sivakov; Anna Cavallini 2014-01-01 - - 4.02 Riassunto (Abstract) -