In this work, we extend an already existing simulator for tunnel FETs to fully take into account nonparabolicity (NP) of the conduction band in all aspects, namely the wave-function (WF) and density of states (DOS) corrections for both charge and BTBT current calculation. Comparison against more advanced full-quantum simulators based on TB and k ·p Hamiltonians is presented as well and indicates very good matching between models for simple tunnel diodes. An initial parameter study of the Electron Hole Bilayer TFET (EHBTFET) indicates the presence of an optimum channel thickness, determined by the interplay between the subband alignment voltage and ON current level.

Alper, C., Palestri, P., Padilla, J.L., Gnudi, A., Grassi, R., Gnani, E., et al. (2015). Efficient quantum mechanical simulation of band-to-band tunneling. Institute of Electrical and Electronics Engineers Inc. [10.1109/ULIS.2015.7063793].

Efficient quantum mechanical simulation of band-to-band tunneling

GNUDI, ANTONIO;GRASSI, ROBERTO;GNANI, ELENA;
2015

Abstract

In this work, we extend an already existing simulator for tunnel FETs to fully take into account nonparabolicity (NP) of the conduction band in all aspects, namely the wave-function (WF) and density of states (DOS) corrections for both charge and BTBT current calculation. Comparison against more advanced full-quantum simulators based on TB and k ·p Hamiltonians is presented as well and indicates very good matching between models for simple tunnel diodes. An initial parameter study of the Electron Hole Bilayer TFET (EHBTFET) indicates the presence of an optimum channel thickness, determined by the interplay between the subband alignment voltage and ON current level.
2015
EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
141
144
Alper, C., Palestri, P., Padilla, J.L., Gnudi, A., Grassi, R., Gnani, E., et al. (2015). Efficient quantum mechanical simulation of band-to-band tunneling. Institute of Electrical and Electronics Engineers Inc. [10.1109/ULIS.2015.7063793].
Alper, Cem; Palestri, Pierpaolo; Padilla, Jose L.; Gnudi, Antonio; Grassi, Roberto; Gnani, Elena; Luisier, Mathieu; Ionescu, Adrian M.
File in questo prodotto:
Eventuali allegati, non sono esposti

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/521744
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 5
  • ???jsp.display-item.citation.isi??? 5
social impact