The effects of electrical stress and ionizing radiation on the characteristics of Si-based TFETs were investigated experimentally. We found that the electrical stress effects in TFETs could not be ignored in radiation tests, since they can possibly overwhelm the radiation-induced degradation. Under this circumstance, a lower gate voltage under which the electrical stress effects were suppressed induced a stronger radiation-induced degradation in threshold voltage shift and interface traps accumulation.
Ding, L., Gerardin, S., Paccagnella, A., Gnani, E., Bagatin, M., Driussi, F., et al. (2015). Effects of electrical stress and ionizing radiation on Si-based TFETs. Institute of Electrical and Electronics Engineers Inc. [10.1109/ULIS.2015.7063792].
Effects of electrical stress and ionizing radiation on Si-based TFETs
DING, LILI;PACCAGNELLA, ALESSANDRO;GNANI, ELENA;SELMI, LUCA;
2015
Abstract
The effects of electrical stress and ionizing radiation on the characteristics of Si-based TFETs were investigated experimentally. We found that the electrical stress effects in TFETs could not be ignored in radiation tests, since they can possibly overwhelm the radiation-induced degradation. Under this circumstance, a lower gate voltage under which the electrical stress effects were suppressed induced a stronger radiation-induced degradation in threshold voltage shift and interface traps accumulation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
