SELMI, LUCA

SELMI, LUCA  

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Risultati 1 - 8 di 8 (tempo di esecuzione: 0.016 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs P. Palestri; C. Alexander; A. Asenov; V. Aubry-Fortuna; G. Baccarani; A. Bournel; M. Braccioli; B.... Cheng; P. Dollfus; A. Esposito; D. Esseni; C. Fenouillet-Beranger; C. Fiegna; G. Fiori; A. Ghetti; G. Iannaccone; A. Martinez; B. Majkusiak; S. Monfray; V. Peikert; S. Reggiani; C. Riddet; J. Saint-Martin; E. Sangiorgi; A. Schenk; L. Selmi; L. Silvestri; P. Toniutti; J. Walczak 2009-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, Dav...id; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele 2016-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista Edit Comprehensive comparison.pdf
Effects of electrical stress and ionizing radiation on Si-based TFETs Ding, Lili; Gerardin, Simone; Paccagnella, Alessandro; Gnani, Elena; Bagatin, Marta; Driussi, Fra...ncesco; Selmi, Luca; Le Royer, Cyrille 2015-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation M. Lenzi; P. Palestri; E. Gnani; S. Reggiani; A. Gnudi; D. Esseni; L. Selmi; G. Baccarani 2008-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Modeling nanoscale iii–v channel mosfets with the self-consistent multi-valley/multi-subband monte carlo approach Caruso E.; Esseni D.; Gnani E.; Lizzit D.; Palestri P.; Pin A.; Puglisi F.M.; Selmi L.; Zagni N. 2021-01-01 ELECTRONICS - 1.01 Articolo in rivista electronics-10-02472-v2.pdf
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri,... P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F.M.; Verzellesi, G. 2017-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Non-Local Effects in pMOSFET Substrate Hot-Hole Injection Experiments Selmi L.; Sangiorgi E.; Bez R. 1995-01-01 IEEE ELECTRON DEVICE LETTERS - 1.01 Articolo in rivista -
Performance study of strained III-V materials for ultra-thin body transistor applications Rau, Martin; Markussen, Troels; Caruso, Enrico; Esseni, David; Gnani, Elena; Gnudi, Antonio; Khom...yakov, Petr A.; Luisier, Mathieu; Osgnach, Patrik; Palestri, Pierpaolo; Reggiani, Susanna; Schenk, Andreas; Selmi, Luca; Stokbro, Kurt 2016-01-01 - Editions Frontieres 4.01 Contributo in Atti di convegno -