SELMI, LUCA
SELMI, LUCA
Modeling nanoscale iii–v channel mosfets with the self-consistent multi-valley/multi-subband monte carlo approach
2021 Caruso E.; Esseni D.; Gnani E.; Lizzit D.; Palestri P.; Pin A.; Puglisi F.M.; Selmi L.; Zagni N.
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD
2017 Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F.M.; Verzellesi, G.
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells
2016 Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele
Performance study of strained III-V materials for ultra-thin body transistor applications
2016 Rau, Martin; Markussen, Troels; Caruso, Enrico; Esseni, David; Gnani, Elena; Gnudi, Antonio; Khomyakov, Petr A.; Luisier, Mathieu; Osgnach, Patrik; Palestri, Pierpaolo; Reggiani, Susanna; Schenk, Andreas; Selmi, Luca; Stokbro, Kurt
Effects of electrical stress and ionizing radiation on Si-based TFETs
2015 Ding, Lili; Gerardin, Simone; Paccagnella, Alessandro; Gnani, Elena; Bagatin, Marta; Driussi, Francesco; Selmi, Luca; Le Royer, Cyrille
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs
2009 P. Palestri; C. Alexander; A. Asenov; V. Aubry-Fortuna; G. Baccarani; A. Bournel; M. Braccioli; B. Cheng; P. Dollfus; A. Esposito; D. Esseni; C. Fenouillet-Beranger; C. Fiegna; G. Fiori; A. Ghetti; G. Iannaccone; A. Martinez; B. Majkusiak; S. Monfray; V. Peikert; S. Reggiani; C. Riddet; J. Saint-Martin; E. Sangiorgi; A. Schenk; L. Selmi; L. Silvestri; P. Toniutti; J. Walczak
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation
2008 M. Lenzi; P. Palestri; E. Gnani; S. Reggiani; A. Gnudi; D. Esseni; L. Selmi; G. Baccarani
Non-Local Effects in pMOSFET Substrate Hot-Hole Injection Experiments
1995 Selmi L.; Sangiorgi E.; Bez R.
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Modeling nanoscale iii–v channel mosfets with the self-consistent multi-valley/multi-subband monte carlo approach | Caruso E.; Esseni D.; Gnani E.; Lizzit D.; Palestri P.; Pin A.; Puglisi F.M.; Selmi L.; Zagni N. | 2021-01-01 | ELECTRONICS | - | 1.01 Articolo in rivista | electronics-10-02472-v2.pdf |
| Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD | Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri,... P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F.M.; Verzellesi, G. | 2017-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells | Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, Dav...id; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele | 2016-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | Edit Comprehensive comparison.pdf |
| Performance study of strained III-V materials for ultra-thin body transistor applications | Rau, Martin; Markussen, Troels; Caruso, Enrico; Esseni, David; Gnani, Elena; Gnudi, Antonio; Khom...yakov, Petr A.; Luisier, Mathieu; Osgnach, Patrik; Palestri, Pierpaolo; Reggiani, Susanna; Schenk, Andreas; Selmi, Luca; Stokbro, Kurt | 2016-01-01 | - | Editions Frontieres | 4.01 Contributo in Atti di convegno | - |
| Effects of electrical stress and ionizing radiation on Si-based TFETs | Ding, Lili; Gerardin, Simone; Paccagnella, Alessandro; Gnani, Elena; Bagatin, Marta; Driussi, Fra...ncesco; Selmi, Luca; Le Royer, Cyrille | 2015-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs | P. Palestri; C. Alexander; A. Asenov; V. Aubry-Fortuna; G. Baccarani; A. Bournel; M. Braccioli; B.... Cheng; P. Dollfus; A. Esposito; D. Esseni; C. Fenouillet-Beranger; C. Fiegna; G. Fiori; A. Ghetti; G. Iannaccone; A. Martinez; B. Majkusiak; S. Monfray; V. Peikert; S. Reggiani; C. Riddet; J. Saint-Martin; E. Sangiorgi; A. Schenk; L. Selmi; L. Silvestri; P. Toniutti; J. Walczak | 2009-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation | M. Lenzi; P. Palestri; E. Gnani; S. Reggiani; A. Gnudi; D. Esseni; L. Selmi; G. Baccarani | 2008-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Non-Local Effects in pMOSFET Substrate Hot-Hole Injection Experiments | Selmi L.; Sangiorgi E.; Bez R. | 1995-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | - |