Extensive measurements of hot-hole injection probability from silicon into silicon dioxide covering a wide range of oxide fields and substrate biases are presented and compared with results previously published in the literature. It is found that, in the highly inhomogeneous electric fields typically needed to induce substrate hole injection, nonlocal effects take place that limit the possibility to accurately describe injection probability data by means of a unique set of lucky carrier model parameters.
Non-Local Effects in pMOSFET Substrate Hot-Hole Injection Experiments / Selmi L.; Sangiorgi E.; Bez R.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 16:10(1995), pp. 442-444. [10.1109/55.464811]
Non-Local Effects in pMOSFET Substrate Hot-Hole Injection Experiments
Selmi L.;Sangiorgi E.;
1995
Abstract
Extensive measurements of hot-hole injection probability from silicon into silicon dioxide covering a wide range of oxide fields and substrate biases are presented and compared with results previously published in the literature. It is found that, in the highly inhomogeneous electric fields typically needed to induce substrate hole injection, nonlocal effects take place that limit the possibility to accurately describe injection probability data by means of a unique set of lucky carrier model parameters.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
