DING, LILI

DING, LILI  

CENTRO RICERCA SISTEMI ELETTRONICI INGEGN.INF. E TELECOM."ERCOLE DE CASTRO"  

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Titolo Autore(i) Anno Periodico Editore Tipo File
Effects of bias on the radiation responses of Si-based TFETs Ding, Lili; Gnani, Elena; Gerardin, Simone; Bagatin, Marta; Royer, Cyrille Le; Paccagnella, Aless...andro 2014-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Effects of electrical stress and ionizing radiation on Si-based TFETs Ding, Lili; Gerardin, Simone; Paccagnella, Alessandro; Gnani, Elena; Bagatin, Marta; Driussi, Fra...ncesco; Selmi, Luca; Le Royer, Cyrille 2015-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs Ding, Lili; Gnani, Elena; Gerardin, Simone; Bagatin, Marta; Driussi, Francesco; Selmi, Luca; Roye...r, Cyrille Le; Paccagnella, Alessandro 2016-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
Investigation of hot carrier stress and constant voltage stress in high-κ Si-based TFETs Ding, Lili; Gnani, Elena; Gerardin, Simone; Bagatin, Marta; Driussi, Francesco; Palestri, Pierpao...lo; Selmi, Luca; Royer, Cyrille Le; Paccagnella, Alessandro 2015-01-01 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - 1.01 Articolo in rivista PP Investigation_of_Hot_Carrier_Stress.pdf
Total ionizing dose effects in si-based tunnel FETs Ding, Lili; Gnani, Elena; Gerardin, Simone; Bagatin, Marta; Driussi, Francesco; Palestri, Pierpao...lo; Selmi, Luca; Royer, Cyrille Le; Paccagnella, Alessandro 2014-01-01 IEEE TRANSACTIONS ON NUCLEAR SCIENCE - 1.01 Articolo in rivista -