CRIS Current Research Information System

REGGIANI, SUSANNA
 Distribuzione geografica
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Continente #
NA - Nord America 22.123
AS - Asia 11.373
EU - Europa 9.643
AF - Africa 913
SA - Sud America 636
OC - Oceania 19
Continente sconosciuto - Info sul continente non disponibili 10
Totale 44.717
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Nazione #
US - Stati Uniti d'America 22.004
SG - Singapore 3.369
CN - Cina 3.180
VN - Vietnam 2.533
GB - Regno Unito 2.375
IT - Italia 1.911
DE - Germania 1.323
HK - Hong Kong 870
UA - Ucraina 801
SE - Svezia 755
RU - Federazione Russa 664
IN - India 649
BR - Brasile 458
FR - Francia 440
IE - Irlanda 386
CI - Costa d'Avorio 301
KR - Corea 233
TG - Togo 230
JP - Giappone 220
ZA - Sudafrica 198
EE - Estonia 166
NL - Olanda 144
FI - Finlandia 134
BG - Bulgaria 129
SC - Seychelles 111
CA - Canada 75
AR - Argentina 74
PL - Polonia 72
CH - Svizzera 71
JO - Giordania 68
BE - Belgio 65
AT - Austria 62
ID - Indonesia 49
NG - Nigeria 43
EC - Ecuador 41
GR - Grecia 33
ES - Italia 31
MX - Messico 30
BD - Bangladesh 29
TR - Turchia 28
TW - Taiwan 25
PK - Pakistan 21
CL - Cile 20
AU - Australia 17
LB - Libano 16
HR - Croazia 15
SA - Arabia Saudita 14
UZ - Uzbekistan 14
PY - Paraguay 13
CO - Colombia 12
CZ - Repubblica Ceca 10
RO - Romania 10
DZ - Algeria 9
IQ - Iraq 9
LT - Lituania 9
MY - Malesia 9
IR - Iran 7
DK - Danimarca 6
IL - Israele 6
PE - Perù 6
A2 - ???statistics.table.value.countryCode.A2??? 5
BY - Bielorussia 5
EG - Egitto 5
KZ - Kazakistan 5
MA - Marocco 5
VE - Venezuela 5
AE - Emirati Arabi Uniti 4
DO - Repubblica Dominicana 4
EU - Europa 4
SI - Slovenia 4
BO - Bolivia 3
KE - Kenya 3
NP - Nepal 3
PH - Filippine 3
RS - Serbia 3
SM - San Marino 3
TN - Tunisia 3
AM - Armenia 2
AZ - Azerbaigian 2
CD - Congo 2
HU - Ungheria 2
JM - Giamaica 2
LK - Sri Lanka 2
LU - Lussemburgo 2
LV - Lettonia 2
MD - Moldavia 2
NZ - Nuova Zelanda 2
PA - Panama 2
PT - Portogallo 2
SK - Slovacchia (Repubblica Slovacca) 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
AD - Andorra 1
AL - Albania 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BW - Botswana 1
CR - Costa Rica 1
GH - Ghana 1
GY - Guiana 1
Totale 44.708
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Città #
Ann Arbor 7.899
Singapore 2.285
Southend 2.022
Fairfield 1.728
Ashburn 1.528
Wilmington 1.007
Chandler 910
Woodbridge 871
Hong Kong 843
Santa Clara 812
Seattle 752
Houston 678
Hefei 598
Jacksonville 564
Cambridge 550
Ho Chi Minh City 524
Princeton 507
Dong Ket 445
Bologna 429
Hanoi 423
Beijing 398
Dublin 383
Boardman 330
Abidjan 301
Lomé 230
Dallas 229
Westminster 217
Nanjing 216
Padova 216
Seoul 204
Tokyo 201
Los Angeles 180
Turin 162
Berlin 159
Redmond 159
Milan 149
Medford 133
Sofia 127
Buffalo 123
Jinan 121
Saint Petersburg 112
Shenyang 109
Mülheim 108
Changsha 96
Frankfurt am Main 89
San Diego 88
Munich 78
Nanchang 76
Hebei 74
Redondo Beach 74
Genova 73
Amman 68
Hyderabad 68
Tianjin 65
New York 64
Bremen 63
Cesena 62
Lappeenranta 62
São Paulo 62
Helsinki 61
Mahé 58
Brussels 57
Zhengzhou 56
Guangzhou 55
Bengaluru 54
Da Nang 51
Haiphong 49
London 46
Fremont 44
Hangzhou 44
Shanghai 44
Vienna 44
Quận Bình Thạnh 43
Redwood City 42
Warsaw 41
Abeokuta 40
Bern 39
Jiaxing 39
Taiyuan 39
Norwalk 38
Des Moines 36
Ha Long 36
Chicago 35
Haikou 34
San Francisco 34
Ningbo 33
Phoenix 32
Biên Hòa 31
Taizhou 31
Thái Nguyên 31
Verona 31
Vũng Tàu 29
Amsterdam 28
Lanzhou 28
Pune 28
Chennai 27
Ninh Bình 27
Toronto 27
Dearborn 26
Bắc Ninh 24
Totale 32.696
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Nome #
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes 1.068
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation 310
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation 310
Application of the k ⋅ p Method to Device Simulation 278
Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents 267
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique 264
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide 262
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening 260
TCAD investigation on hot-electron injection in new-generation technologies 259
DC and small-signal numerical simulation of graphene base transistor for terahertz operation 258
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current 256
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations 256
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics 252
TCAD modeling of charge transport in HV-IC encapsulation materials 250
Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions 249
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport 249
Computational study of graphene nanoribbon FETs for RF applications 249
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform 249
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors 246
TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications 244
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model 244
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions 242
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains 237
3D TCAD modeling of NO2CNT FET sensors 235
Performance study of strained III-V materials for ultra-thin body transistor applications 234
Characterization and Modeling of BTI in SiC MOSFETs 234
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 232
Analysis of HCS in STI-based LDMOS transistors 232
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime 230
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture 229
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 228
3D simulation of quantum-wire confining potential for a GaAs/AlGaAs 2DEG heterostructure 227
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 226
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps 221
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 219
An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions 218
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture 218
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 218
Band-Structure Effects in Ultrascaled Silicon Nanowires 216
Investigation on single-electron dynamics in coupled GaAs-AlGaAs quantum wires 212
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 212
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films 211
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 210
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs 207
Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors 207
An investigation of performance limits of conventional and tunneling graphene-based transist 207
Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs 207
Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform 205
Theoretical foundations of the quantum drift-diffusion and density-gradient models 204
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics 204
Investigating the performance limits of silicon nanowires and carbon nanotube FETs 203
Coherent transport in coupled quantum wires assisted by surface acoustic waves 203
Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs 202
Entanglement and quantum computing with ballistic electrons 202
A quantum mechanical analysis of the electrostatics in multiple-gate FETs 202
Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform 201
TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation 200
Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio 199
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback 199
The density-gradient correction as a disguised pilot wave of de Broglie 198
Gate current of a ‘well-tempered’ MOSFET simulated with the spherical-harmonic expansion model 198
Computational study of the ultimate scaling limits of CNT tunneling devices 198
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation 198
Comparison of Advanced Transport Models for Nanoscale nMOSFETs 198
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors 198
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments 197
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools 197
Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection 197
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures 195
Characterization and modeling of high-voltage LDMOS transistors 195
Numerical investigation of the total SOA of trench field-plate LDMOS devices 194
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs 194
Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices 193
Numerical simulation of ballistic surface transport in cylindrical nanosystems 193
High-frequency analog GNR-FET design criteria 192
Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes 191
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE 190
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach 189
Can Interface Traps Suppress TFET Ambipolarity? 189
TFET-based inverter performance in the presence of traps and localized strain 189
Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight 187
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor 187
Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation 187
Anomalous increase of leakage current in epoxy moulding compounds under wet conditions 186
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations 186
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 185
Impact of strain and interface traps on the performance of III-V nanowire TFETs 185
Experimental Investigation on Carrier Dynamics at the Thermal Breakdown 184
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 184
Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs 184
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs 184
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 183
Coherent surface transport in cylindrical nanosystems 182
TCAD study of DLC coatings for large-area high-power diodes 182
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions 181
Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs 181
Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation 181
Leakage current and breakdown of GaN-on-Silicon vertical structures 181
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors 180
Steep-slope devices: Prospects and challenges 179
Totale 22.225
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Categoria #
all - tutte 111.554
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 111.554
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20212.454 0 0 0 0 0 223 98 245 448 226 235 979
2021/202212.009 567 178 1.514 1.334 1.537 1.185 1.257 1.228 1.348 368 623 870
2022/20234.883 515 721 232 606 321 322 157 224 904 95 481 305
2023/20241.364 82 251 109 109 99 234 130 69 33 132 58 58
2024/20255.854 407 906 374 537 1.228 241 451 174 71 151 218 1.096
2025/20268.142 1.859 1.428 1.425 1.029 1.732 669 0 0 0 0 0 0
Totale 45.238