CRIS Current Research Information System

REGGIANI, SUSANNA
 Distribuzione geografica
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Continente #
NA - Nord America 23.318
AS - Asia 14.446
EU - Europa 10.156
AF - Africa 968
SA - Sud America 736
OC - Oceania 22
Continente sconosciuto - Info sul continente non disponibili 10
Totale 49.656
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Nazione #
US - Stati Uniti d'America 23.172
VN - Vietnam 4.270
SG - Singapore 3.683
CN - Cina 3.589
GB - Regno Unito 2.406
IT - Italia 2.010
DE - Germania 1.355
HK - Hong Kong 932
UA - Ucraina 806
SE - Svezia 759
IN - India 727
FR - Francia 695
RU - Federazione Russa 677
BR - Brasile 506
IE - Irlanda 388
CI - Costa d'Avorio 302
JP - Giappone 291
KR - Corea 271
TG - Togo 230
ZA - Sudafrica 212
EE - Estonia 166
NL - Olanda 158
FI - Finlandia 148
BG - Bulgaria 129
SC - Seychelles 112
AR - Argentina 86
CA - Canada 84
PL - Polonia 80
BE - Belgio 74
CH - Svizzera 73
JO - Giordania 73
PH - Filippine 71
BD - Bangladesh 67
TW - Taiwan 65
AT - Austria 63
ID - Indonesia 60
IQ - Iraq 52
TR - Turchia 49
EC - Ecuador 48
TH - Thailandia 48
PK - Pakistan 44
NG - Nigeria 43
ES - Italia 40
MX - Messico 40
GR - Grecia 36
SA - Arabia Saudita 28
UZ - Uzbekistan 28
CL - Cile 24
MY - Malesia 21
CO - Colombia 20
AU - Australia 19
LB - Libano 18
PY - Paraguay 18
VE - Venezuela 16
HR - Croazia 15
DZ - Algeria 13
RO - Romania 12
LT - Lituania 11
NP - Nepal 11
CZ - Repubblica Ceca 10
IL - Israele 10
EG - Egitto 9
TN - Tunisia 9
ET - Etiopia 8
MA - Marocco 8
BY - Bielorussia 7
DK - Danimarca 7
IR - Iran 7
KZ - Kazakistan 7
PE - Perù 7
A2 - ???statistics.table.value.countryCode.A2??? 5
AE - Emirati Arabi Uniti 5
JM - Giamaica 5
KE - Kenya 5
RS - Serbia 5
BO - Bolivia 4
DO - Repubblica Dominicana 4
EU - Europa 4
GH - Ghana 4
HU - Ungheria 4
SI - Slovenia 4
UY - Uruguay 4
AM - Armenia 3
AZ - Azerbaigian 3
LV - Lettonia 3
PS - Palestinian Territory 3
SM - San Marino 3
SN - Senegal 3
TT - Trinidad e Tobago 3
CD - Congo 2
CR - Costa Rica 2
LK - Sri Lanka 2
LU - Lussemburgo 2
LY - Libia 2
MD - Moldavia 2
NZ - Nuova Zelanda 2
OM - Oman 2
PA - Panama 2
PT - Portogallo 2
SK - Slovacchia (Repubblica Slovacca) 2
Totale 49.629
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Città #
Ann Arbor 7.899
Singapore 2.573
Southend 2.022
Fairfield 1.728
Ashburn 1.633
Wilmington 1.007
Ho Chi Minh City 949
Chandler 910
Hong Kong 871
Woodbridge 871
Santa Clara 822
Hanoi 821
Seattle 752
Houston 680
San Jose 660
Hefei 602
Jacksonville 564
Cambridge 550
Princeton 507
Bologna 454
Dong Ket 445
Beijing 406
Dublin 385
Boardman 330
Abidjan 302
Tokyo 243
Lauterbourg 238
Dallas 235
Lomé 230
Westminster 217
Nanjing 216
Padova 216
Seoul 204
Los Angeles 196
Milan 171
Turin 168
Berlin 160
Redmond 159
Medford 133
Da Nang 130
Buffalo 128
Haiphong 128
Sofia 127
Jinan 122
Saint Petersburg 112
Shenyang 111
Frankfurt am Main 109
Mülheim 108
Changsha 99
New York 91
San Diego 89
Munich 80
Nanchang 79
Guangzhou 77
Helsinki 75
Hebei 74
Redondo Beach 74
Amman 73
Genova 73
Tianjin 70
Hyderabad 68
São Paulo 68
Brussels 65
Bremen 63
Cesena 63
Lappeenranta 62
Council Bluffs 59
Shanghai 59
Mahé 58
Zhengzhou 57
Bengaluru 55
Hangzhou 53
London 51
Orem 49
Warsaw 48
Thái Nguyên 46
Hải Dương 45
Quận Bình Thạnh 45
Fremont 44
Vienna 44
Biên Hòa 43
Chicago 42
Redwood City 42
Abeokuta 40
Taiyuan 40
Bern 39
Ha Long 39
Jiaxing 39
Amsterdam 38
Can Tho 38
Norwalk 38
Chennai 37
Des Moines 37
The Dalles 37
Phoenix 35
Haikou 34
San Francisco 34
Ningbo 33
Ninh Bình 32
Taizhou 32
Totale 35.409
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Nome #
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes 1.095
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation 330
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation 320
Application of the k ⋅ p Method to Device Simulation 305
Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents 289
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide 283
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening 279
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors 278
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current 276
DC and small-signal numerical simulation of graphene base transistor for terahertz operation 276
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique 275
TCAD investigation on hot-electron injection in new-generation technologies 274
TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications 273
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform 273
Characterization and Modeling of BTI in SiC MOSFETs 270
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics 268
TCAD modeling of charge transport in HV-IC encapsulation materials 267
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains 266
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport 266
Computational study of graphene nanoribbon FETs for RF applications 266
Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions 265
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations 264
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model 260
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions 260
3D TCAD modeling of NO2CNT FET sensors 260
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 256
Analysis of HCS in STI-based LDMOS transistors 256
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 252
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture 252
Performance study of strained III-V materials for ultra-thin body transistor applications 249
3D simulation of quantum-wire confining potential for a GaAs/AlGaAs 2DEG heterostructure 248
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime 246
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture 243
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps 242
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 241
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 239
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 237
Band-Structure Effects in Ultrascaled Silicon Nanowires 236
Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors 230
An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions 230
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors 230
Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform 229
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 228
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations 227
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE 227
Investigation on single-electron dynamics in coupled GaAs-AlGaAs quantum wires 227
Theoretical foundations of the quantum drift-diffusion and density-gradient models 227
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 226
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics 226
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films 225
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs 225
Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio 224
Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs 224
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs 223
Investigating the performance limits of silicon nanowires and carbon nanotube FETs 221
An investigation of performance limits of conventional and tunneling graphene-based transist 221
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback 221
TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation 221
Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs 220
The density-gradient correction as a disguised pilot wave of de Broglie 219
Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform 219
Characterization and modeling of high-voltage LDMOS transistors 218
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs 218
Coherent transport in coupled quantum wires assisted by surface acoustic waves 217
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation 216
A quantum mechanical analysis of the electrostatics in multiple-gate FETs 216
Computational study of the ultimate scaling limits of CNT tunneling devices 215
Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection 215
Impact of strain and interface traps on the performance of III-V nanowire TFETs 213
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools 211
Numerical simulation of ballistic surface transport in cylindrical nanosystems 210
Anomalous increase of leakage current in epoxy moulding compounds under wet conditions 209
Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes 209
TFET-based inverter performance in the presence of traps and localized strain 209
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures 208
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments 208
Entanglement and quantum computing with ballistic electrons 208
Comparison of Advanced Transport Models for Nanoscale nMOSFETs 207
Numerical investigation of the total SOA of trench field-plate LDMOS devices 207
Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation 207
Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices 205
Gate current of a ‘well-tempered’ MOSFET simulated with the spherical-harmonic expansion model 204
High-frequency analog GNR-FET design criteria 203
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 202
Can Interface Traps Suppress TFET Ambipolarity? 202
Steep-slope devices: Prospects and challenges 202
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach 201
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 201
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors 201
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions 200
Optimization of GaSb/InAs TFET exploiting different strain configurations 200
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor 199
Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation 199
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 199
Capacitance estimation for InAs Tunnel FETs by means of full-quantum k·p simulation 199
TCAD study of DLC coatings for large-area high-power diodes 199
Leakage current and breakdown of GaN-on-Silicon vertical structures 198
Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs 198
Coherent surface transport in cylindrical nanosystems 197
Experimental Investigation on Carrier Dynamics at the Thermal Breakdown 197
Totale 24.132
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Categoria #
all - tutte 119.455
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 119.455
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.440 0 0 0 0 0 0 0 0 0 226 235 979
2021/202212.009 567 178 1.514 1.334 1.537 1.185 1.257 1.228 1.348 368 623 870
2022/20234.883 515 721 232 606 321 322 157 224 904 95 481 305
2023/20241.364 82 251 109 109 99 234 130 69 33 132 58 58
2024/20255.854 407 906 374 537 1.228 241 451 174 71 151 218 1.096
2025/202613.161 1.859 1.428 1.425 1.029 1.732 714 1.351 273 2.579 771 0 0
Totale 50.257