CRIS Current Research Information System

REGGIANI, SUSANNA
 Distribuzione geografica
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Continente #
NA - Nord America 25.775
AS - Asia 14.798
EU - Europa 10.505
AF - Africa 970
SA - Sud America 760
Continente sconosciuto - Info sul continente non disponibili 614
OC - Oceania 23
Totale 53.445
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Nazione #
US - Stati Uniti d'America 25.499
VN - Vietnam 4.285
SG - Singapore 3.759
CN - Cina 3.636
GB - Regno Unito 2.423
IT - Italia 2.259
DE - Germania 1.363
HK - Hong Kong 959
UA - Ucraina 806
SE - Svezia 788
IN - India 750
FR - Francia 705
RU - Federazione Russa 680
BR - Brasile 518
IE - Irlanda 389
CI - Costa d'Avorio 302
JP - Giappone 296
KR - Corea 277
TG - Togo 230
ZA - Sudafrica 212
BD - Bangladesh 205
EE - Estonia 166
NL - Olanda 162
CA - Canada 159
FI - Finlandia 148
BG - Bulgaria 129
SC - Seychelles 114
PL - Polonia 88
AR - Argentina 87
BE - Belgio 75
CH - Svizzera 73
JO - Giordania 73
TW - Taiwan 72
PH - Filippine 71
AT - Austria 67
ID - Indonesia 60
IQ - Iraq 52
EC - Ecuador 50
MX - Messico 50
TH - Thailandia 50
TR - Turchia 49
ES - Italia 44
PK - Pakistan 44
NG - Nigeria 43
GR - Grecia 36
SA - Arabia Saudita 28
UZ - Uzbekistan 28
CL - Cile 25
CO - Colombia 23
MY - Malesia 21
AU - Australia 20
JM - Giamaica 19
PY - Paraguay 19
LB - Libano 18
VE - Venezuela 17
HR - Croazia 15
DZ - Algeria 13
RO - Romania 13
NP - Nepal 12
CR - Costa Rica 11
CZ - Repubblica Ceca 11
IL - Israele 11
LT - Lituania 11
IR - Iran 10
PE - Perù 10
EG - Egitto 9
TN - Tunisia 9
BY - Bielorussia 8
ET - Etiopia 8
MA - Marocco 8
DK - Danimarca 7
KZ - Kazakistan 7
HN - Honduras 6
HU - Ungheria 6
A2 - ???statistics.table.value.countryCode.A2??? 5
AE - Emirati Arabi Uniti 5
KE - Kenya 5
RS - Serbia 5
BO - Bolivia 4
DO - Repubblica Dominicana 4
EU - Europa 4
GH - Ghana 4
MD - Moldavia 4
NI - Nicaragua 4
SI - Slovenia 4
SV - El Salvador 4
TT - Trinidad e Tobago 4
UY - Uruguay 4
AM - Armenia 3
AZ - Azerbaigian 3
GT - Guatemala 3
LV - Lettonia 3
PR - Porto Rico 3
PS - Palestinian Territory 3
PT - Portogallo 3
SK - Slovacchia (Repubblica Slovacca) 3
SM - San Marino 3
SN - Senegal 3
CD - Congo 2
LK - Sri Lanka 2
Totale 52.800
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Città #
Ann Arbor 7.899
Singapore 2.642
Southend 2.022
Ashburn 1.856
Fairfield 1.728
Wilmington 1.009
Ho Chi Minh City 951
Chandler 910
San Jose 901
Hong Kong 896
Woodbridge 871
Santa Clara 863
Hanoi 831
Seattle 760
Houston 709
Hefei 602
Jacksonville 569
Cambridge 550
Princeton 510
Bologna 480
Dong Ket 445
Council Bluffs 434
Beijing 425
Dublin 385
Dallas 340
Boardman 333
Abidjan 302
Los Angeles 275
Tokyo 245
Lauterbourg 238
Lomé 230
Milan 219
Westminster 218
Nanjing 216
Padova 216
Seoul 204
New York 195
Turin 172
Berlin 160
Redmond 159
Buffalo 141
Medford 135
Da Nang 130
Haiphong 129
Sofia 127
Jinan 122
Frankfurt am Main 113
Saint Petersburg 112
Shenyang 111
Mülheim 108
Changsha 99
San Diego 89
Munich 82
Nanchang 79
Guangzhou 77
Orem 76
Helsinki 75
San Francisco 75
Hebei 74
Redondo Beach 74
Amman 73
Genova 73
São Paulo 70
Tianjin 70
Hyderabad 68
Shanghai 66
Brussels 65
Phoenix 65
Chicago 64
Bremen 63
Cesena 63
Lappeenranta 62
Bengaluru 60
Mahé 58
Zhengzhou 57
London 56
Hangzhou 53
Warsaw 53
Vienna 48
Denver 47
Thái Nguyên 46
Hải Dương 45
Quận Bình Thạnh 45
Fremont 44
Biên Hòa 43
Montreal 43
Rome 43
Redwood City 42
Abeokuta 40
Taiyuan 40
Toronto 40
Bern 39
Chennai 39
Des Moines 39
Ha Long 39
Jiaxing 39
Amsterdam 38
Can Tho 38
Norwalk 38
The Dalles 38
Totale 37.050
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Nome #
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes 1.104
Novel Floating-p SCR-LDMOS Design for BCD Technology: Improving ESD Protection with High Holding Voltages and Fast Turn-On 902
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation 332
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation 327
Application of the k ⋅ p Method to Device Simulation 325
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors 314
Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents 297
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide 296
TCAD investigation on hot-electron injection in new-generation technologies 288
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening 286
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique 284
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current 281
DC and small-signal numerical simulation of graphene base transistor for terahertz operation 281
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform 278
TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications 277
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains 273
TCAD modeling of charge transport in HV-IC encapsulation materials 273
3D TCAD modeling of NO2CNT FET sensors 273
Characterization and Modeling of BTI in SiC MOSFETs 273
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport 272
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 271
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics 270
Computational study of graphene nanoribbon FETs for RF applications 270
Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions 269
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model 269
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions 268
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations 267
Analysis of HCS in STI-based LDMOS transistors 262
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 261
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture 260
Performance study of strained III-V materials for ultra-thin body transistor applications 255
3D simulation of quantum-wire confining potential for a GaAs/AlGaAs 2DEG heterostructure 254
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime 251
Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors 249
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 249
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 247
Band-Structure Effects in Ultrascaled Silicon Nanowires 247
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps 246
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture 246
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 245
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations 242
Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs 242
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors 241
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE 240
Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors 240
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 237
Coherent transport in coupled quantum wires assisted by surface acoustic waves 236
Investigation on single-electron dynamics in coupled GaAs-AlGaAs quantum wires 235
Theoretical foundations of the quantum drift-diffusion and density-gradient models 235
Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform 234
An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions 234
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films 232
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs 232
Anomalous increase of leakage current in epoxy moulding compounds under wet conditions 231
Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio 231
Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs 231
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics 231
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 230
Investigating the performance limits of silicon nanowires and carbon nanotube FETs 229
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs 229
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback 228
Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs 226
Characterization and modeling of high-voltage LDMOS transistors 226
Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform 225
TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation 225
An investigation of performance limits of conventional and tunneling graphene-based transist 224
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs 223
The density-gradient correction as a disguised pilot wave of de Broglie 222
Computational study of the ultimate scaling limits of CNT tunneling devices 222
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current 221
Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection 221
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation 220
A quantum mechanical analysis of the electrostatics in multiple-gate FETs 220
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools 219
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures 217
Comparison of Advanced Transport Models for Nanoscale nMOSFETs 217
Numerical simulation of ballistic surface transport in cylindrical nanosystems 216
Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes 216
Impact of strain and interface traps on the performance of III-V nanowire TFETs 216
Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation 215
TFET-based inverter performance in the presence of traps and localized strain 215
Entanglement and quantum computing with ballistic electrons 214
Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices 213
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 213
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments 212
Numerical investigation of the total SOA of trench field-plate LDMOS devices 212
Gate current of a ‘well-tempered’ MOSFET simulated with the spherical-harmonic expansion model 211
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach 211
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 210
Experimental Investigation on Carrier Dynamics at the Thermal Breakdown 209
Can Interface Traps Suppress TFET Ambipolarity? 209
High-frequency analog GNR-FET design criteria 208
BTI saturation and universal relaxation in SiC power MOSFETs 208
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor 206
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions 205
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors 205
Leakage current and breakdown of GaN-on-Silicon vertical structures 205
Steep-slope devices: Prospects and challenges 205
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 205
Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions 204
Totale 25.683
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Categoria #
all - tutte 132.576
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 132.576
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202211.442 0 178 1.514 1.334 1.537 1.185 1.257 1.228 1.348 368 623 870
2022/20234.883 515 721 232 606 321 322 157 224 904 95 481 305
2023/20241.364 82 251 109 109 99 234 130 69 33 132 58 58
2024/20255.854 407 906 374 537 1.228 241 451 174 71 151 218 1.096
2025/202615.350 1.859 1.428 1.425 1.029 1.732 714 1.351 273 2.579 950 1.398 612
2026/2027999 478 521 0 0 0 0 0 0 0 0 0 0
Totale 53.445