CRIS Current Research Information System

REGGIANI, SUSANNA
 Distribuzione geografica
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Continente #
NA - Nord America 24.989
AS - Asia 14.667
EU - Europa 10.369
AF - Africa 968
SA - Sud America 740
OC - Oceania 23
Continente sconosciuto - Info sul continente non disponibili 10
Totale 51.766
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Nazione #
US - Stati Uniti d'America 24.772
VN - Vietnam 4.278
SG - Singapore 3.712
CN - Cina 3.617
GB - Regno Unito 2.420
IT - Italia 2.190
DE - Germania 1.360
HK - Hong Kong 940
UA - Ucraina 806
SE - Svezia 759
IN - India 745
FR - Francia 699
RU - Federazione Russa 680
BR - Brasile 510
IE - Irlanda 388
CI - Costa d'Avorio 302
JP - Giappone 293
KR - Corea 273
TG - Togo 230
ZA - Sudafrica 212
BD - Bangladesh 189
EE - Estonia 166
NL - Olanda 159
FI - Finlandia 148
CA - Canada 139
BG - Bulgaria 129
SC - Seychelles 112
AR - Argentina 86
PL - Polonia 80
BE - Belgio 75
CH - Svizzera 73
JO - Giordania 73
PH - Filippine 71
TW - Taiwan 66
AT - Austria 64
ID - Indonesia 60
IQ - Iraq 52
TH - Thailandia 49
TR - Turchia 49
EC - Ecuador 48
MX - Messico 47
PK - Pakistan 44
NG - Nigeria 43
ES - Italia 40
GR - Grecia 36
SA - Arabia Saudita 28
UZ - Uzbekistan 28
CL - Cile 24
MY - Malesia 21
AU - Australia 20
CO - Colombia 20
LB - Libano 18
PY - Paraguay 18
VE - Venezuela 16
HR - Croazia 15
DZ - Algeria 13
NP - Nepal 12
RO - Romania 12
IL - Israele 11
LT - Lituania 11
CZ - Repubblica Ceca 10
JM - Giamaica 10
EG - Egitto 9
TN - Tunisia 9
BY - Bielorussia 8
ET - Etiopia 8
MA - Marocco 8
DK - Danimarca 7
IR - Iran 7
KZ - Kazakistan 7
PE - Perù 7
A2 - ???statistics.table.value.countryCode.A2??? 5
AE - Emirati Arabi Uniti 5
KE - Kenya 5
RS - Serbia 5
BO - Bolivia 4
DO - Repubblica Dominicana 4
EU - Europa 4
GH - Ghana 4
HU - Ungheria 4
MD - Moldavia 4
SI - Slovenia 4
UY - Uruguay 4
AM - Armenia 3
AZ - Azerbaigian 3
CR - Costa Rica 3
LV - Lettonia 3
PS - Palestinian Territory 3
SK - Slovacchia (Repubblica Slovacca) 3
SM - San Marino 3
SN - Senegal 3
TT - Trinidad e Tobago 3
CD - Congo 2
LK - Sri Lanka 2
LU - Lussemburgo 2
LY - Libia 2
NZ - Nuova Zelanda 2
OM - Oman 2
PA - Panama 2
PT - Portogallo 2
Totale 51.736
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Città #
Ann Arbor 7.899
Singapore 2.597
Southend 2.022
Ashburn 1.804
Fairfield 1.728
Wilmington 1.009
Ho Chi Minh City 951
Chandler 910
San Jose 880
Hong Kong 879
Woodbridge 871
Santa Clara 844
Hanoi 825
Seattle 758
Houston 705
Hefei 602
Jacksonville 568
Cambridge 550
Princeton 507
Bologna 480
Dong Ket 445
Beijing 419
Dublin 385
Boardman 333
Dallas 330
Abidjan 302
Los Angeles 262
Tokyo 243
Lauterbourg 238
Lomé 230
Westminster 218
Nanjing 216
Padova 216
Milan 205
Seoul 204
New York 185
Turin 172
Council Bluffs 171
Berlin 160
Redmond 159
Buffalo 139
Medford 134
Da Nang 130
Haiphong 128
Sofia 127
Jinan 122
Saint Petersburg 112
Frankfurt am Main 111
Shenyang 111
Mülheim 108
Changsha 99
San Diego 89
Munich 82
Nanchang 79
Guangzhou 77
Orem 76
Helsinki 75
Hebei 74
Redondo Beach 74
Amman 73
Genova 73
San Francisco 71
Tianjin 70
São Paulo 69
Hyderabad 68
Brussels 65
Bremen 63
Cesena 63
Lappeenranta 62
Shanghai 62
Chicago 58
Mahé 58
Bengaluru 57
Zhengzhou 57
London 55
Hangzhou 53
Phoenix 53
Warsaw 49
Denver 46
Thái Nguyên 46
Hải Dương 45
Quận Bình Thạnh 45
Vienna 45
Fremont 44
Biên Hòa 43
Montreal 42
Redwood City 42
Abeokuta 40
Taiyuan 40
Bern 39
Ha Long 39
Jiaxing 39
Amsterdam 38
Can Tho 38
Des Moines 38
Norwalk 38
The Dalles 38
Chennai 37
Pune 36
Rome 36
Totale 36.502
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Nome #
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes 1.100
Novel Floating-p SCR-LDMOS Design for BCD Technology: Improving ESD Protection with High Holding Voltages and Fast Turn-On 883
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation 331
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation 324
Application of the k ⋅ p Method to Device Simulation 316
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors 299
Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents 293
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide 286
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique 282
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening 281
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current 279
DC and small-signal numerical simulation of graphene base transistor for terahertz operation 279
TCAD investigation on hot-electron injection in new-generation technologies 278
TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications 275
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform 275
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains 271
TCAD modeling of charge transport in HV-IC encapsulation materials 271
Characterization and Modeling of BTI in SiC MOSFETs 271
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics 269
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport 269
Computational study of graphene nanoribbon FETs for RF applications 268
Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions 266
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions 266
3D TCAD modeling of NO2CNT FET sensors 266
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model 265
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations 265
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 264
Analysis of HCS in STI-based LDMOS transistors 259
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 255
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture 254
Performance study of strained III-V materials for ultra-thin body transistor applications 251
3D simulation of quantum-wire confining potential for a GaAs/AlGaAs 2DEG heterostructure 250
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime 249
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 248
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 244
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture 243
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps 242
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 241
Band-Structure Effects in Ultrascaled Silicon Nanowires 241
Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors 238
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE 237
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors 236
Coherent transport in coupled quantum wires assisted by surface acoustic waves 234
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations 233
Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform 233
Investigation on single-electron dynamics in coupled GaAs-AlGaAs quantum wires 233
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 233
Theoretical foundations of the quantum drift-diffusion and density-gradient models 232
An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions 232
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs 231
Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio 229
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films 229
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 228
Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs 228
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics 228
Investigating the performance limits of silicon nanowires and carbon nanotube FETs 227
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs 227
Anomalous increase of leakage current in epoxy moulding compounds under wet conditions 225
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback 225
Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform 224
Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs 223
An investigation of performance limits of conventional and tunneling graphene-based transist 223
TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation 223
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs 221
The density-gradient correction as a disguised pilot wave of de Broglie 220
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation 220
Characterization and modeling of high-voltage LDMOS transistors 220
Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection 220
Computational study of the ultimate scaling limits of CNT tunneling devices 219
A quantum mechanical analysis of the electrostatics in multiple-gate FETs 218
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools 217
Comparison of Advanced Transport Models for Nanoscale nMOSFETs 215
Numerical simulation of ballistic surface transport in cylindrical nanosystems 214
Impact of strain and interface traps on the performance of III-V nanowire TFETs 214
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures 213
Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes 213
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current 212
TFET-based inverter performance in the presence of traps and localized strain 212
Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices 210
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments 210
Entanglement and quantum computing with ballistic electrons 210
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach 209
Numerical investigation of the total SOA of trench field-plate LDMOS devices 209
Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation 209
Gate current of a ‘well-tempered’ MOSFET simulated with the spherical-harmonic expansion model 208
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 208
Can Interface Traps Suppress TFET Ambipolarity? 208
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 206
High-frequency analog GNR-FET design criteria 205
BTI saturation and universal relaxation in SiC power MOSFETs 205
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions 204
Experimental Investigation on Carrier Dynamics at the Thermal Breakdown 203
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors 203
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor 203
Steep-slope devices: Prospects and challenges 203
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 202
Capacitance estimation for InAs Tunnel FETs by means of full-quantum k.p simulation 202
Coherent surface transport in cylindrical nanosystems 201
Theory of the Junctionless Nanowire FET 201
Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation 201
Totale 25.248
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Categoria #
all - tutte 127.214
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 127.214
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021979 0 0 0 0 0 0 0 0 0 0 0 979
2021/202212.009 567 178 1.514 1.334 1.537 1.185 1.257 1.228 1.348 368 623 870
2022/20234.883 515 721 232 606 321 322 157 224 904 95 481 305
2023/20241.364 82 251 109 109 99 234 130 69 33 132 58 58
2024/20255.854 407 906 374 537 1.228 241 451 174 71 151 218 1.096
2025/202615.272 1.859 1.428 1.425 1.029 1.732 714 1.351 273 2.579 950 1.398 534
Totale 52.368