The solution method for the Boltzmann transport equation based on the spherical-harmonics expansion has been applied to the transport problem in a Si–SiO2 structure. The solver has been improved in order to fully simulate MOS structures. At the Si–SiO2 interface, the solution of the Schroedinger equation takes into account the carrier tunnelling across the energy-barrier discontinuity. Results of a 2D simulation are shown for different devices to validate the model.

Gate current of a ‘well-tempered’ MOSFET simulated with the spherical-harmonic expansion model

PERRONI, GIANCARLO;REGGIANI, SUSANNA;RUDAN, MASSIMO
2004

Abstract

The solution method for the Boltzmann transport equation based on the spherical-harmonics expansion has been applied to the transport problem in a Si–SiO2 structure. The solver has been improved in order to fully simulate MOS structures. At the Si–SiO2 interface, the solution of the Schroedinger equation takes into account the carrier tunnelling across the energy-barrier discontinuity. Results of a 2D simulation are shown for different devices to validate the model.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
G. Perroni; S. Reggiani; M. Rudan
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/14096
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