In this paper, we report a combined experimental/simulation analysis of the degradation induced by hot carrier mechanisms, under ON-state stress, in silicon-based LDMOS transistors. In this regime, electrons can gain sufficient kinetic energy necessary to create interface states, hence inducing device degradation. In particular, the ON-resistance degradation in linear regime has been experimentally characterized by means of different stress conditions and temperatures. The hot-carrier stress regime has been fully reproduced in the frame of TCAD simulations by using physics-based models able to provide the degradation kinetics. A thorough investigation of the spatial interface trap distribution and its gate-bias and temperature dependences has been carried out achieving a quantitative understanding of the degradation effects in the device.

Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide

TALLARICO, ANDREA NATALE;REGGIANI, SUSANNA;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2017

Abstract

In this paper, we report a combined experimental/simulation analysis of the degradation induced by hot carrier mechanisms, under ON-state stress, in silicon-based LDMOS transistors. In this regime, electrons can gain sufficient kinetic energy necessary to create interface states, hence inducing device degradation. In particular, the ON-resistance degradation in linear regime has been experimentally characterized by means of different stress conditions and temperatures. The hot-carrier stress regime has been fully reproduced in the frame of TCAD simulations by using physics-based models able to provide the degradation kinetics. A thorough investigation of the spatial interface trap distribution and its gate-bias and temperature dependences has been carried out achieving a quantitative understanding of the degradation effects in the device.
Tallarico, A. N.; Reggiani, S.; Magnone, P.; Croce, G.; Depetro, R.; Gattari, P.; Sangiorgi, E.; Fiegna, C.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/609463
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