CRIS Current Research Information System

GNUDI, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 19.243
EU - Europa 8.764
AS - Asia 3.703
AF - Africa 665
SA - Sud America 30
OC - Oceania 22
Continente sconosciuto - Info sul continente non disponibili 21
AN - Antartide 1
Totale 32.449
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Nazione #
US - Stati Uniti d'America 19.205
GB - Regno Unito 2.454
IT - Italia 1.540
DE - Germania 1.209
CN - Cina 1.156
VN - Vietnam 924
SE - Svezia 895
SG - Singapore 811
UA - Ucraina 794
IN - India 515
IE - Irlanda 400
FR - Francia 381
RU - Federazione Russa 312
TG - Togo 231
EE - Estonia 177
CI - Costa d'Avorio 174
ZA - Sudafrica 170
BG - Bulgaria 125
HK - Hong Kong 82
BE - Belgio 79
JO - Giordania 75
GR - Grecia 69
CH - Svizzera 66
FI - Finlandia 64
SC - Seychelles 59
PL - Polonia 47
AT - Austria 39
CA - Canada 36
NL - Olanda 33
JP - Giappone 32
NG - Nigeria 24
AU - Australia 20
HR - Croazia 20
EU - Europa 16
CL - Cile 15
LB - Libano 15
RO - Romania 14
PK - Pakistan 13
BR - Brasile 11
CZ - Repubblica Ceca 11
ID - Indonesia 11
TR - Turchia 11
ES - Italia 10
KR - Corea 9
IL - Israele 8
SA - Arabia Saudita 8
TW - Taiwan 8
UZ - Uzbekistan 8
IR - Iran 6
DK - Danimarca 5
SI - Slovenia 5
A2 - ???statistics.table.value.countryCode.A2??? 4
BY - Bielorussia 4
KZ - Kazakistan 3
MA - Marocco 3
PE - Perù 3
PT - Portogallo 3
BD - Bangladesh 2
IS - Islanda 2
MD - Moldavia 2
NZ - Nuova Zelanda 2
A1 - Anonimo 1
AE - Emirati Arabi Uniti 1
AM - Armenia 1
BH - Bahrain 1
CM - Camerun 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
EC - Ecuador 1
ET - Etiopia 1
GS - Georgia del Sud e Isole Sandwich Australi 1
LI - Liechtenstein 1
LK - Sri Lanka 1
LU - Lussemburgo 1
MU - Mauritius 1
MX - Messico 1
NO - Norvegia 1
PH - Filippine 1
RS - Serbia 1
TH - Thailandia 1
Totale 32.449
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Città #
Ann Arbor 7.863
Southend 2.149
Fairfield 1.612
Ashburn 1.079
Chandler 1.042
Wilmington 946
Woodbridge 813
Singapore 703
Seattle 699
Houston 633
Jacksonville 567
Cambridge 536
Dong Ket 510
Princeton 499
Dublin 400
Bologna 254
Lomé 231
Westminster 222
Padova 213
Nanjing 209
Abidjan 174
Turin 172
Berlin 161
Medford 143
Jinan 122
Sofia 121
Santa Clara 116
Milan 115
Saint Petersburg 115
Mülheim 107
Shenyang 107
Bremen 98
San Diego 88
Brussels 78
Nanchang 77
Redmond 76
Amman 75
Changsha 71
Hebei 69
Genova 63
Mahé 56
Tianjin 56
Boardman 53
Bern 47
Helsinki 42
Taiyuan 42
Beijing 41
Dearborn 36
Des Moines 36
Fremont 36
Haikou 36
Zhengzhou 35
Norwalk 34
Olalla 34
Verona 34
Redwood City 33
Warsaw 33
Jiaxing 31
Duncan 30
Los Angeles 30
Ningbo 30
San Francisco 28
Vienna 28
Falls Church 26
Hyderabad 26
Lanzhou 26
Pune 25
Taizhou 25
Cesena 24
Delhi 23
Fuzhou 23
Tokyo 22
London 21
Abeokuta 20
Hangzhou 20
San Venanzo 20
Florence 19
Guangzhou 19
Aachen 18
Kunming 18
Lappeenranta 18
Rome 18
Washington 18
Chicago 17
Toronto 17
Frankfurt am Main 16
Modena 15
Cogorno 14
Ravenna 14
Montegrotto Terme 13
New York 13
Monteprandone 12
Munich 12
Paris 12
Castanet-Tolosan 11
Frankfurt Am Main 11
Genzano Di Roma 11
Braunschweig 10
Moscow 10
New Delhi 10
Totale 24.836
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Nome #
A 0.83-2.5 GHz Continuously Tunable Quadrature VCO 593
A 0.75-2.2 GHz continuously tunable quadrature VCO 224
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations 221
Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents 216
Computational study of graphene nanoribbon FETs for RF applications 214
TCAD investigation on hot-electron injection in new-generation technologies 206
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells 203
A detection circuit, corresponding device and method 200
Analysis of HCS in STI-based LDMOS transistors 198
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening 197
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current 195
3D TCAD modeling of NO2CNT FET sensors 195
A MEMS capacitive test structure for in-line automatic planar stress characterization 192
A gain/phase mismatch calibration procedure for RF I/Q downconverters 190
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes 188
TCAD modeling of charge transport in HV-IC encapsulation materials 187
An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions 187
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions 184
A CMOS 90 nm 55 mW 3.4-to-9.2 GHz 12 Band frequency synthesizer for MB-OFDM UWB 184
Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions 183
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 180
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films 180
3D Capacitive transmission of analog signals with automatic compensation of the voltage attenuation 180
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture 179
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model 178
An investigation of performance limits of conventional and tunneling graphene-based transist 178
A 0.86 – 2.4 GHz Fractional Synthesizer with Spur Compensation and Linearization Techniques for Multi-standard Cellular Transceivers 177
A MEMS reconfigurable quad-band class-E power amplifier for GSM standard 175
TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications 174
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains 173
Automatic compensation of the voltage attenuation in 3-D interconnection based on capacitive coupling 173
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation 172
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 169
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 168
Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs 166
Band-Structure Effects in Ultrascaled Silicon Nanowires 165
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools 165
Quadrature VCOs based on direct second harmonic locking: theoretical analysis and experimental validation 165
A design flow for inductively degenerated LNA's 163
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor 163
Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform 162
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime 161
Electromagnetic optimization of an RF-MEMS wafer-level package 161
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 161
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform 161
Numerical investigation of the total SOA of trench field-plate LDMOS devices 160
Can Interface Traps Suppress TFET Ambipolarity? 160
Modeling approaches for band-structure calculation in III-V FET quantum wells 160
Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection 160
Compact modeling of a MEMS toggle-switch based on modified nodal analysis 160
Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight 158
Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs 158
A Clockless Temperature-Compensated Nanowatt Analog Front-End for Wake-Up Radios Based on a Band-Pass Envelope Detector 157
Computational study of the ultimate scaling limits of CNT tunneling devices 156
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation 156
High-frequency analog GNR-FET design criteria 156
Characterization and Programming Algorithm of Phase Change Memory Cells for Analog In-Memory Computing 156
A gated oscillator clock and data recovery circuit for nanowatt wake-up and data receivers 156
A MEMS Reconfigurable Quad-Band Class-E Power Amplifier for GSM Standard 154
Low-loss ohmic RF-MEMS switches with interdigitated electrode topology 153
Theoretical analysis and modeling for nanoelectronics 153
Theoretical foundations of the quantum drift-diffusion and density-gradient models 152
Nanowatt Wake-Up Radios: Discrete-Components and Integrated Architectures 152
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs 151
Quadrature VCO Based on Direct Second Harmonic Locking 150
Characterization and modeling of high-voltage LDMOS transistors 150
Wireless multi-standard terminals: system analysis and design of a reconfigurable RF front-end 149
Experimental Validation of Mixed Electromechanical and Electromagnetic Modeling of RF-MEMS Devices Within a Standard IC Simulation Environment 149
Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight 149
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 149
TFET-based inverter performance in the presence of traps and localized strain 149
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback 148
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 147
Theory of the Junctionless Nanowire FET 147
Characterization and modeling of electrical stress degradation in STI-based integrated power devices 147
Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation 146
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 145
A fully parameterized FEM model for electromagnetic optimization of an RF-MEMS wafer-level package 145
Band Effects on the transport characteristics of ultra-scaled SNW-FETs 145
Leakage current and breakdown of GaN-on-Silicon vertical structures 145
Efficient Pre-Stressed Harmonic Analysis of RF-Microresonators by means of Model Order Reduction 144
Performance Analysis of Nonvolatile Gate-All-Around Charge-Trapping TAHOS Memory Cells 144
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics 144
A Reconfigurable Impedance Matching Network Employing RF-MEMS Switches 143
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps 143
TCAD-based investigation on transport properties of Diamond-like carbon coatings for HV-ICs 143
Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs 142
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles 142
Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs 142
Impact of strain and interface traps on the performance of III-V nanowire TFETs 142
Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform 141
RF-MEMS tunable networks for VCO applications 141
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions 141
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors 141
Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation 141
Performance study of strained III-V materials for ultra-thin body transistor applications 141
Modeling of Nonvolatile Gate-All-Around Charge Trapping SONOS Memory Cells 141
Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs 140
A 2V 0.35um CMOS DECT RF front-end with on-chip frequency synthesizer 140
Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs 140
Totale 16.770
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Categoria #
all - tutte 69.166
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 69.166
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20205.554 0 0 125 394 665 732 794 871 885 462 223 403
2020/20213.786 687 271 150 253 64 190 104 235 475 181 184 992
2021/202212.113 609 193 1.464 1.352 1.543 1.197 1.251 1.233 1.335 395 624 917
2022/20235.221 515 789 270 648 358 352 160 311 933 108 502 275
2023/20241.400 105 262 95 140 113 244 123 77 32 114 42 53
2024/20251.294 358 819 117 0 0 0 0 0 0 0 0 0
Totale 32.880