CRIS Current Research Information System

GNUDI, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 24.164
AS - Asia 13.914
EU - Europa 11.267
AF - Africa 982
SA - Sud America 670
OC - Oceania 27
Continente sconosciuto - Info sul continente non disponibili 22
AN - Antartide 1
Totale 51.047
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Nazione #
US - Stati Uniti d'America 23.985
VN - Vietnam 4.135
SG - Singapore 3.492
CN - Cina 3.387
GB - Regno Unito 2.556
IT - Italia 2.057
DE - Germania 2.033
HK - Hong Kong 987
SE - Svezia 916
UA - Ucraina 815
FR - Francia 725
IN - India 690
RU - Federazione Russa 601
BR - Brasile 471
IE - Irlanda 406
CI - Costa d'Avorio 347
JP - Giappone 282
KR - Corea 241
TG - Togo 231
ZA - Sudafrica 211
NL - Olanda 182
EE - Estonia 177
FI - Finlandia 150
BG - Bulgaria 127
CA - Canada 108
BD - Bangladesh 99
SC - Seychelles 98
BE - Belgio 94
PL - Polonia 84
JO - Giordania 81
PH - Filippine 79
GR - Grecia 74
CH - Svizzera 70
AR - Argentina 69
ID - Indonesia 63
TW - Taiwan 61
TH - Thailandia 55
AT - Austria 46
TR - Turchia 42
ES - Italia 40
MX - Messico 40
EC - Ecuador 39
IQ - Iraq 38
PK - Pakistan 38
NG - Nigeria 26
CL - Cile 25
AU - Australia 24
SA - Arabia Saudita 24
UZ - Uzbekistan 23
CO - Colombia 22
RO - Romania 21
HR - Croazia 20
LB - Libano 17
EU - Europa 16
MY - Malesia 16
PY - Paraguay 16
IL - Israele 15
CZ - Repubblica Ceca 12
DZ - Algeria 11
LT - Lituania 11
EG - Egitto 10
PE - Perù 10
VE - Venezuela 10
NP - Nepal 9
TN - Tunisia 9
DK - Danimarca 8
JM - Giamaica 8
KE - Kenya 8
MA - Marocco 8
IR - Iran 7
SI - Slovenia 7
ET - Etiopia 6
KZ - Kazakistan 6
SK - Slovacchia (Repubblica Slovacca) 6
AE - Emirati Arabi Uniti 5
BY - Bielorussia 5
DO - Repubblica Dominicana 5
UY - Uruguay 5
A2 - ???statistics.table.value.countryCode.A2??? 4
GE - Georgia 4
MD - Moldavia 4
PT - Portogallo 4
TT - Trinidad e Tobago 4
BO - Bolivia 3
CR - Costa Rica 3
HN - Honduras 3
OM - Oman 3
PS - Palestinian Territory 3
RS - Serbia 3
SN - Senegal 3
AM - Armenia 2
AZ - Azerbaigian 2
CD - Congo 2
GH - Ghana 2
IS - Islanda 2
KW - Kuwait 2
LV - Lettonia 2
LY - Libia 2
NO - Norvegia 2
NZ - Nuova Zelanda 2
Totale 51.014
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Città #
Ann Arbor 7.863
Singapore 2.416
Southend 2.149
Fairfield 1.612
Ashburn 1.607
Chandler 1.042
Dallas 966
Wilmington 948
Ho Chi Minh City 905
Santa Clara 888
Hong Kong 866
Woodbridge 813
Hanoi 788
San Jose 771
Seattle 708
Houston 644
Jacksonville 569
Cambridge 536
Hefei 534
Dong Ket 510
Princeton 499
Bologna 418
Dublin 406
Beijing 391
Abidjan 347
Boardman 318
Düsseldorf 290
Lauterbourg 243
Tokyo 243
Lomé 231
Westminster 222
Nanjing 221
Padova 213
Seoul 188
Los Angeles 185
Milan 184
Turin 181
Berlin 162
Medford 143
Jinan 128
Sofia 121
Haiphong 115
Saint Petersburg 115
Da Nang 113
Buffalo 112
Shenyang 110
Mülheim 107
New York 103
Helsinki 102
Bremen 98
Munich 94
Brussels 89
San Diego 89
Changsha 87
Frankfurt am Main 83
Amman 80
Nanchang 79
Redondo Beach 79
Redmond 76
Tianjin 74
Hebei 69
Shanghai 67
São Paulo 65
Genova 63
Guangzhou 62
Warsaw 61
Council Bluffs 60
Mahé 56
Zhengzhou 55
London 50
Bengaluru 48
Chicago 48
Taiyuan 48
Bern 47
Cesena 47
San Francisco 46
Quận Bình Thạnh 44
Biên Hòa 43
Thái Nguyên 42
Hangzhou 40
Hải Dương 40
Ha Long 39
Orem 39
Des Moines 38
Rome 38
Haikou 37
Can Tho 36
Dearborn 36
Fremont 36
Phoenix 35
Verona 35
Amsterdam 34
Jiaxing 34
Montreal 34
Norwalk 34
Olalla 34
The Dalles 34
Chennai 33
Ninh Bình 33
Redwood City 33
Totale 36.047
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Nome #
A 0.83-2.5 GHz Continuously Tunable Quadrature VCO 2.246
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes 1.100
A 0.75-2.2 GHz continuously tunable quadrature VCO 354
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation 331
Application of the k ⋅ p Method to Device Simulation 316
Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents 293
A detection circuit, corresponding device and method 290
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells 290
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening 280
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current 279
DC and small-signal numerical simulation of graphene base transistor for terahertz operation 279
TCAD investigation on hot-electron injection in new-generation technologies 278
TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications 275
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform 275
TCAD modeling of charge transport in HV-IC encapsulation materials 271
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains 269
Computational study of graphene nanoribbon FETs for RF applications 268
Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions 266
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions 266
3D TCAD modeling of NO2CNT FET sensors 266
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model 265
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations 265
A 0.86 – 2.4 GHz Fractional Synthesizer with Spur Compensation and Linearization Techniques for Multi-standard Cellular Transceivers 262
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 262
A gated oscillator clock and data recovery circuit for nanowatt wake-up and data receivers 262
A gain/phase mismatch calibration procedure for RF I/Q downconverters 261
Characterization and Programming Algorithm of Phase Change Memory Cells for Analog In-Memory Computing 259
Analysis of HCS in STI-based LDMOS transistors 258
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture 254
Performance study of strained III-V materials for ultra-thin body transistor applications 251
3D Capacitive transmission of analog signals with automatic compensation of the voltage attenuation 250
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime 249
A Clockless Temperature-Compensated Nanowatt Analog Front-End for Wake-Up Radios Based on a Band-Pass Envelope Detector 246
A MEMS capacitive test structure for in-line automatic planar stress characterization 244
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps 242
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 241
Band-Structure Effects in Ultrascaled Silicon Nanowires 240
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 239
Automatic compensation of the voltage attenuation in 3-D interconnection based on capacitive coupling 239
An embedded PCM Peripheral Unit adding Analog MAC In-Memory Computing Feature addressing Non-linearity and Time Drift Compensation 238
A design flow for inductively degenerated LNA's 235
Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform 233
A MEMS reconfigurable quad-band class-E power amplifier for GSM standard 232
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations 231
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 231
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs 231
Theoretical foundations of the quantum drift-diffusion and density-gradient models 230
An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions 230
A CMOS 90 nm 55 mW 3.4-to-9.2 GHz 12 Band frequency synthesizer for MB-OFDM UWB 229
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films 229
Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs 228
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics 228
Quadrature VCOs based on direct second harmonic locking: theoretical analysis and experimental validation 227
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback 225
Nanowatt Clock and Data Recovery for Ultra-Low Power Wake-Up Based Receivers 225
Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform 224
Modeling approaches for band-structure calculation in III-V FET quantum wells 223
TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation 223
Electromagnetic optimization of an RF-MEMS wafer-level package 222
A MEMS Reconfigurable Quad-Band Class-E Power Amplifier for GSM Standard 222
An investigation of performance limits of conventional and tunneling graphene-based transist 221
Quadrature VCO Based on Direct Second Harmonic Locking 220
Characterization and modeling of high-voltage LDMOS transistors 220
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs 220
Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection 220
Compact modeling of a MEMS toggle-switch based on modified nodal analysis 219
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation 218
Nanowatt Wake-Up Radios: Discrete-Components and Integrated Architectures 218
Low-loss ohmic RF-MEMS switches with interdigitated electrode topology 217
Computational study of the ultimate scaling limits of CNT tunneling devices 217
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools 217
Impact of strain and interface traps on the performance of III-V nanowire TFETs 214
Wireless multi-standard terminals: system analysis and design of a reconfigurable RF front-end 213
Experimental Validation of Mixed Electromechanical and Electromagnetic Modeling of RF-MEMS Devices Within a Standard IC Simulation Environment 211
TFET-based inverter performance in the presence of traps and localized strain 211
Numerical investigation of the total SOA of trench field-plate LDMOS devices 209
Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation 209
Can Interface Traps Suppress TFET Ambipolarity? 208
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 205
High-frequency analog GNR-FET design criteria 205
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 204
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors 203
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor 203
Steep-slope devices: Prospects and challenges 203
RF-MEMS tunable networks for VCO applications 202
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions 202
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 202
A Reconfigurable Impedance Matching Network Employing RF-MEMS Switches 201
Theory of the Junctionless Nanowire FET 201
Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation 201
Leakage current and breakdown of GaN-on-Silicon vertical structures 201
Capacitance estimation for InAs Tunnel FETs by means of full-quantum k·p simulation 201
Efficient Pre-Stressed Harmonic Analysis of RF-Microresonators by means of Model Order Reduction 200
Full-quantum simulation of heterojunction TFET inverters providing better performance than multi-gate CMOS at sub-0.35V VDD 200
Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs 200
Optimization of GaSb/InAs TFET exploiting different strain configurations 200
Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions 199
Design guidelines for GaSb/InAs TFET exploiting strain and device size 199
Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs 199
Efficient quantum mechanical simulation of band-to-band tunneling 199
Totale 26.389
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Categoria #
all - tutte 120.184
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 120.184
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021992 0 0 0 0 0 0 0 0 0 0 0 992
2021/202212.113 609 193 1.464 1.352 1.543 1.197 1.251 1.233 1.335 395 624 917
2022/20235.221 515 789 270 648 358 352 160 311 933 108 502 275
2023/20241.400 105 262 95 140 113 244 123 77 32 114 42 53
2024/20256.417 358 819 361 523 1.200 225 719 228 55 537 265 1.127
2025/202613.592 1.816 1.445 1.845 905 1.552 737 1.173 252 2.393 876 439 159
Totale 51.595