CRIS Current Research Information System

GNUDI, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 24.707
AS - Asia 14.014
EU - Europa 11.411
AF - Africa 986
SA - Sud America 688
Continente sconosciuto - Info sul continente non disponibili 570
OC - Oceania 27
AN - Antartide 1
Totale 52.404
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Nazione #
US - Stati Uniti d'America 24.471
VN - Vietnam 4.138
SG - Singapore 3.527
CN - Cina 3.405
GB - Regno Unito 2.558
IT - Italia 2.141
DE - Germania 2.034
HK - Hong Kong 1.006
SE - Svezia 948
UA - Ucraina 815
FR - Francia 731
IN - India 691
RU - Federazione Russa 601
BR - Brasile 480
IE - Irlanda 407
CI - Costa d'Avorio 347
JP - Giappone 285
KR - Corea 244
TG - Togo 231
ZA - Sudafrica 211
NL - Olanda 183
EE - Estonia 177
FI - Finlandia 150
CA - Canada 130
BG - Bulgaria 127
BD - Bangladesh 111
SC - Seychelles 102
BE - Belgio 95
PL - Polonia 85
JO - Giordania 81
PH - Filippine 79
GR - Grecia 74
AR - Argentina 70
CH - Svizzera 70
TW - Taiwan 64
ID - Indonesia 63
TH - Thailandia 55
AT - Austria 49
ES - Italia 45
MX - Messico 45
TR - Turchia 42
EC - Ecuador 41
IQ - Iraq 38
PK - Pakistan 38
CL - Cile 26
NG - Nigeria 26
AU - Australia 24
CO - Colombia 24
SA - Arabia Saudita 24
UZ - Uzbekistan 23
RO - Romania 22
HR - Croazia 20
JM - Giamaica 18
LB - Libano 17
EU - Europa 16
MY - Malesia 16
PY - Paraguay 16
IL - Israele 15
CZ - Repubblica Ceca 13
PE - Perù 12
DZ - Algeria 11
LT - Lituania 11
VE - Venezuela 11
EG - Egitto 10
IR - Iran 10
NP - Nepal 9
TN - Tunisia 9
DK - Danimarca 8
KE - Kenya 8
MA - Marocco 8
CR - Costa Rica 7
HN - Honduras 7
SI - Slovenia 7
SK - Slovacchia (Repubblica Slovacca) 7
BY - Bielorussia 6
ET - Etiopia 6
KZ - Kazakistan 6
AE - Emirati Arabi Uniti 5
DO - Repubblica Dominicana 5
TT - Trinidad e Tobago 5
UY - Uruguay 5
A2 - ???statistics.table.value.countryCode.A2??? 4
GE - Georgia 4
MD - Moldavia 4
NI - Nicaragua 4
PT - Portogallo 4
SV - El Salvador 4
BO - Bolivia 3
NO - Norvegia 3
OM - Oman 3
PS - Palestinian Territory 3
RS - Serbia 3
SN - Senegal 3
AM - Armenia 2
AZ - Azerbaigian 2
CD - Congo 2
GH - Ghana 2
GT - Guatemala 2
HU - Ungheria 2
IS - Islanda 2
Totale 51.814
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Città #
Ann Arbor 7.863
Singapore 2.448
Southend 2.149
Ashburn 1.630
Fairfield 1.612
Chandler 1.042
Dallas 968
Wilmington 948
Santa Clara 907
Ho Chi Minh City 906
Hong Kong 884
Woodbridge 813
Hanoi 790
San Jose 789
Seattle 709
Houston 645
Jacksonville 571
Cambridge 536
Hefei 534
Dong Ket 510
Princeton 499
Bologna 430
Dublin 406
Beijing 400
Abidjan 347
Boardman 318
Düsseldorf 290
Tokyo 246
Lauterbourg 243
Lomé 231
Westminster 222
Nanjing 221
Padova 213
Milan 199
Council Bluffs 191
Los Angeles 191
Seoul 188
Turin 183
Berlin 162
Medford 144
Jinan 128
Sofia 121
Haiphong 115
Saint Petersburg 115
Buffalo 113
Da Nang 113
Shenyang 110
Mülheim 107
New York 104
Helsinki 102
Bremen 98
Munich 94
San Diego 90
Brussels 89
Changsha 87
Frankfurt am Main 83
Amman 80
Nanchang 79
Redondo Beach 79
Redmond 76
Tianjin 74
Hebei 69
Shanghai 69
São Paulo 67
Genova 63
Guangzhou 62
Warsaw 62
Mahé 56
Zhengzhou 55
Chicago 51
London 51
Bengaluru 48
San Francisco 48
Taiyuan 48
Bern 47
Cesena 47
Quận Bình Thạnh 44
Rome 44
Biên Hòa 43
Thái Nguyên 42
Hangzhou 40
Hải Dương 40
Orem 40
Ha Long 39
Des Moines 38
Haikou 37
Phoenix 37
Can Tho 36
Dearborn 36
Fremont 36
Verona 36
Montreal 35
Toronto 35
Amsterdam 34
Jiaxing 34
Norwalk 34
Olalla 34
The Dalles 34
Brooklyn 33
Chennai 33
Totale 36.372
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Nome #
A 0.83-2.5 GHz Continuously Tunable Quadrature VCO 2.259
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes 1.103
A 0.75-2.2 GHz continuously tunable quadrature VCO 361
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation 331
Application of the k ⋅ p Method to Device Simulation 323
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells 298
Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents 296
A detection circuit, corresponding device and method 294
TCAD investigation on hot-electron injection in new-generation technologies 286
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening 284
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current 280
DC and small-signal numerical simulation of graphene base transistor for terahertz operation 280
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform 277
TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications 275
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains 272
TCAD modeling of charge transport in HV-IC encapsulation materials 271
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 270
3D TCAD modeling of NO2CNT FET sensors 270
Computational study of graphene nanoribbon FETs for RF applications 269
Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions 268
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model 268
A 0.86 – 2.4 GHz Fractional Synthesizer with Spur Compensation and Linearization Techniques for Multi-standard Cellular Transceivers 268
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions 267
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations 267
A gated oscillator clock and data recovery circuit for nanowatt wake-up and data receivers 266
Characterization and Programming Algorithm of Phase Change Memory Cells for Analog In-Memory Computing 262
A gain/phase mismatch calibration procedure for RF I/Q downconverters 261
Analysis of HCS in STI-based LDMOS transistors 261
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture 259
3D Capacitive transmission of analog signals with automatic compensation of the voltage attenuation 255
Performance study of strained III-V materials for ultra-thin body transistor applications 255
An embedded PCM Peripheral Unit adding Analog MAC In-Memory Computing Feature addressing Non-linearity and Time Drift Compensation 250
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime 250
Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors 249
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 249
A Clockless Temperature-Compensated Nanowatt Analog Front-End for Wake-Up Radios Based on a Band-Pass Envelope Detector 248
Band-Structure Effects in Ultrascaled Silicon Nanowires 246
A MEMS capacitive test structure for in-line automatic planar stress characterization 245
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps 245
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 244
Automatic compensation of the voltage attenuation in 3-D interconnection based on capacitive coupling 242
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations 239
A design flow for inductively degenerated LNA's 238
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 236
A MEMS reconfigurable quad-band class-E power amplifier for GSM standard 235
Theoretical foundations of the quantum drift-diffusion and density-gradient models 234
Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform 233
An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions 233
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs 232
Quadrature VCOs based on direct second harmonic locking: theoretical analysis and experimental validation 232
A CMOS 90 nm 55 mW 3.4-to-9.2 GHz 12 Band frequency synthesizer for MB-OFDM UWB 231
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films 231
Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs 230
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics 230
Nanowatt Clock and Data Recovery for Ultra-Low Power Wake-Up Based Receivers 230
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback 227
Electromagnetic optimization of an RF-MEMS wafer-level package 226
A MEMS Reconfigurable Quad-Band Class-E Power Amplifier for GSM Standard 225
Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform 225
Modeling approaches for band-structure calculation in III-V FET quantum wells 225
TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation 225
Quadrature VCO Based on Direct Second Harmonic Locking 224
An investigation of performance limits of conventional and tunneling graphene-based transist 224
Characterization and modeling of high-voltage LDMOS transistors 224
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs 222
Computational study of the ultimate scaling limits of CNT tunneling devices 221
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation 220
Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection 220
Compact modeling of a MEMS toggle-switch based on modified nodal analysis 220
Low-loss ohmic RF-MEMS switches with interdigitated electrode topology 218
Experimental Validation of Mixed Electromechanical and Electromagnetic Modeling of RF-MEMS Devices Within a Standard IC Simulation Environment 218
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools 218
Nanowatt Wake-Up Radios: Discrete-Components and Integrated Architectures 218
Simulation Framework for Hole Spin Qubits 215
Wireless multi-standard terminals: system analysis and design of a reconfigurable RF front-end 215
Impact of strain and interface traps on the performance of III-V nanowire TFETs 214
TFET-based inverter performance in the presence of traps and localized strain 213
Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation 212
Numerical investigation of the total SOA of trench field-plate LDMOS devices 211
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 210
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 209
Can Interface Traps Suppress TFET Ambipolarity? 208
High-frequency analog GNR-FET design criteria 207
RF-MEMS tunable networks for VCO applications 205
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor 205
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions 204
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors 204
Leakage current and breakdown of GaN-on-Silicon vertical structures 204
Steep-slope devices: Prospects and challenges 204
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 204
Efficient Pre-Stressed Harmonic Analysis of RF-Microresonators by means of Model Order Reduction 203
A Reconfigurable Impedance Matching Network Employing RF-MEMS Switches 203
Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions 203
Capacitance estimation for InAs Tunnel FETs by means of full-quantum k.p simulation 203
Capacitance estimation for InAs Tunnel FETs by means of full-quantum k·p simulation 203
Theory of the Junctionless Nanowire FET 202
Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs 202
Optimization of GaSb/InAs TFET exploiting different strain configurations 202
Full-quantum simulation of heterojunction TFET inverters providing better performance than multi-gate CMOS at sub-0.35V VDD 201
Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation 201
Totale 26.755
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Categoria #
all - tutte 124.696
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 124.696
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202211.504 0 193 1.464 1.352 1.543 1.197 1.251 1.233 1.335 395 624 917
2022/20235.221 515 789 270 648 358 352 160 311 933 108 502 275
2023/20241.400 105 262 95 140 113 244 123 77 32 114 42 53
2024/20256.417 358 819 361 523 1.200 225 719 228 55 537 265 1.127
2025/202613.870 1.816 1.445 1.845 905 1.552 737 1.173 252 2.393 876 439 437
2026/2027531 378 153 0 0 0 0 0 0 0 0 0 0
Totale 52.404