CRIS Current Research Information System

GNUDI, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 22.526
AS - Asia 10.955
EU - Europa 10.697
AF - Africa 919
SA - Sud America 574
OC - Oceania 23
Continente sconosciuto - Info sul continente non disponibili 22
AN - Antartide 1
Totale 45.717
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Nazione #
US - Stati Uniti d'America 22.401
SG - Singapore 3.161
CN - Cina 2.999
VN - Vietnam 2.556
GB - Regno Unito 2.529
DE - Germania 2.008
IT - Italia 1.883
HK - Hong Kong 916
SE - Svezia 912
UA - Ucraina 810
IN - India 612
RU - Federazione Russa 590
FR - Francia 468
BR - Brasile 423
IE - Irlanda 405
CI - Costa d'Avorio 345
TG - Togo 231
KR - Corea 202
JP - Giappone 200
ZA - Sudafrica 187
EE - Estonia 177
NL - Olanda 171
FI - Finlandia 132
BG - Bulgaria 127
SC - Seychelles 98
BE - Belgio 89
CA - Canada 84
PL - Polonia 77
JO - Giordania 75
GR - Grecia 71
CH - Svizzera 70
AR - Argentina 59
ID - Indonesia 53
AT - Austria 45
ES - Italia 36
EC - Ecuador 32
BD - Bangladesh 26
NG - Nigeria 26
MX - Messico 24
TR - Turchia 24
AU - Australia 21
HR - Croazia 20
TW - Taiwan 20
CL - Cile 19
EU - Europa 16
PK - Pakistan 16
LB - Libano 15
RO - Romania 15
PY - Paraguay 13
CZ - Repubblica Ceca 12
UZ - Uzbekistan 11
CO - Colombia 10
IL - Israele 10
LT - Lituania 10
SA - Arabia Saudita 10
IQ - Iraq 9
PE - Perù 9
DK - Danimarca 7
IR - Iran 7
MY - Malesia 7
SI - Slovenia 7
DZ - Algeria 6
MA - Marocco 6
SK - Slovacchia (Repubblica Slovacca) 6
VE - Venezuela 6
DO - Repubblica Dominicana 5
TN - Tunisia 5
A2 - ???statistics.table.value.countryCode.A2??? 4
AE - Emirati Arabi Uniti 4
BY - Bielorussia 4
EG - Egitto 4
KZ - Kazakistan 4
HN - Honduras 3
KE - Kenya 3
NP - Nepal 3
PH - Filippine 3
PT - Portogallo 3
AM - Armenia 2
AZ - Azerbaigian 2
CD - Congo 2
GE - Georgia 2
IS - Islanda 2
JM - Giamaica 2
MD - Moldavia 2
NZ - Nuova Zelanda 2
PA - Panama 2
RS - Serbia 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
A1 - Anonimo 1
AD - Andorra 1
AF - Afghanistan, Repubblica islamica di 1
AL - Albania 1
BH - Bahrain 1
BO - Bolivia 1
BW - Botswana 1
CM - Camerun 1
CR - Costa Rica 1
ET - Etiopia 1
GS - Georgia del Sud e Isole Sandwich Australi 1
Totale 45.702
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Città #
Ann Arbor 7.863
Southend 2.149
Singapore 2.117
Fairfield 1.612
Ashburn 1.481
Chandler 1.042
Dallas 953
Wilmington 948
Santa Clara 865
Hong Kong 829
Woodbridge 813
Seattle 705
Houston 637
Jacksonville 567
Cambridge 536
Hefei 527
Ho Chi Minh City 519
Dong Ket 510
Princeton 499
Hanoi 415
Dublin 405
Bologna 378
Beijing 370
Abidjan 345
Boardman 310
Düsseldorf 290
Lomé 231
Westminster 222
Nanjing 221
Padova 213
Seoul 188
Tokyo 186
Turin 178
Milan 174
Los Angeles 164
Berlin 161
Medford 143
Jinan 126
Sofia 121
Saint Petersburg 115
Shenyang 109
Mülheim 107
Buffalo 104
Bremen 98
Munich 94
San Diego 88
Brussels 85
Helsinki 84
Changsha 81
Redondo Beach 79
Nanchang 78
Redmond 76
Amman 75
Tianjin 71
Hebei 69
Frankfurt am Main 68
Genova 63
New York 62
São Paulo 58
Mahé 56
Warsaw 56
Zhengzhou 55
Shanghai 53
Da Nang 51
Haiphong 49
Bengaluru 48
Guangzhou 48
Bern 47
Taiyuan 47
Cesena 46
London 46
Quận Bình Thạnh 42
San Francisco 39
Chicago 38
Dearborn 36
Des Moines 36
Fremont 36
Haikou 36
Ha Long 35
Jiaxing 34
Norwalk 34
Olalla 34
Verona 34
Hangzhou 33
Redwood City 33
Thái Nguyên 32
Ningbo 31
Toronto 31
Yubileyny 31
Duncan 30
Falkenstein 30
Rome 30
Vienna 30
Biên Hòa 29
Amsterdam 27
Hyderabad 27
Lanzhou 27
Ninh Bình 27
Phoenix 27
Vũng Tàu 27
Totale 33.215
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Nome #
A 0.83-2.5 GHz Continuously Tunable Quadrature VCO 2.169
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes 1.068
A 0.75-2.2 GHz continuously tunable quadrature VCO 331
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation 310
Application of the k ⋅ p Method to Device Simulation 277
Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents 267
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening 260
TCAD investigation on hot-electron injection in new-generation technologies 259
DC and small-signal numerical simulation of graphene base transistor for terahertz operation 258
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations 256
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current 255
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells 254
A detection circuit, corresponding device and method 252
TCAD modeling of charge transport in HV-IC encapsulation materials 250
Computational study of graphene nanoribbon FETs for RF applications 249
A gain/phase mismatch calibration procedure for RF I/Q downconverters 248
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform 248
Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions 247
TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications 244
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model 244
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions 242
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains 237
Performance study of strained III-V materials for ultra-thin body transistor applications 233
3D TCAD modeling of NO2CNT FET sensors 233
Analysis of HCS in STI-based LDMOS transistors 232
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime 230
A 0.86 – 2.4 GHz Fractional Synthesizer with Spur Compensation and Linearization Techniques for Multi-standard Cellular Transceivers 230
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture 229
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 228
A MEMS capacitive test structure for in-line automatic planar stress characterization 226
A design flow for inductively degenerated LNA's 224
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps 221
A gated oscillator clock and data recovery circuit for nanowatt wake-up and data receivers 221
Characterization and Programming Algorithm of Phase Change Memory Cells for Analog In-Memory Computing 220
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 219
Automatic compensation of the voltage attenuation in 3-D interconnection based on capacitive coupling 219
3D Capacitive transmission of analog signals with automatic compensation of the voltage attenuation 219
An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions 218
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 218
A Clockless Temperature-Compensated Nanowatt Analog Front-End for Wake-Up Radios Based on a Band-Pass Envelope Detector 218
A CMOS 90 nm 55 mW 3.4-to-9.2 GHz 12 Band frequency synthesizer for MB-OFDM UWB 216
Band-Structure Effects in Ultrascaled Silicon Nanowires 216
A MEMS reconfigurable quad-band class-E power amplifier for GSM standard 212
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films 211
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 210
Quadrature VCO Based on Direct Second Harmonic Locking 207
An investigation of performance limits of conventional and tunneling graphene-based transist 207
Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs 207
Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform 204
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics 204
Low-loss ohmic RF-MEMS switches with interdigitated electrode topology 203
Theoretical foundations of the quantum drift-diffusion and density-gradient models 203
Modeling approaches for band-structure calculation in III-V FET quantum wells 203
Quadrature VCOs based on direct second harmonic locking: theoretical analysis and experimental validation 203
Electromagnetic optimization of an RF-MEMS wafer-level package 201
Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform 201
TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation 200
Computational study of the ultimate scaling limits of CNT tunneling devices 198
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation 198
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback 197
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools 197
Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection 197
Wireless multi-standard terminals: system analysis and design of a reconfigurable RF front-end 195
Nanowatt Wake-Up Radios: Discrete-Components and Integrated Architectures 195
Numerical investigation of the total SOA of trench field-plate LDMOS devices 194
Characterization and modeling of high-voltage LDMOS transistors 194
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs 194
A MEMS Reconfigurable Quad-Band Class-E Power Amplifier for GSM Standard 193
High-frequency analog GNR-FET design criteria 192
Nanowatt Clock and Data Recovery for Ultra-Low Power Wake-Up Based Receivers 192
Compact modeling of a MEMS toggle-switch based on modified nodal analysis 192
Experimental Validation of Mixed Electromechanical and Electromagnetic Modeling of RF-MEMS Devices Within a Standard IC Simulation Environment 191
An embedded PCM Peripheral Unit adding Analog MAC In-Memory Computing Feature addressing Non-linearity and Time Drift Compensation 189
Can Interface Traps Suppress TFET Ambipolarity? 189
TFET-based inverter performance in the presence of traps and localized strain 189
RF-MEMS tunable networks for VCO applications 188
Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight 187
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor 187
Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation 187
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations 186
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 185
Impact of strain and interface traps on the performance of III-V nanowire TFETs 185
Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs 184
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs 184
Efficient Pre-Stressed Harmonic Analysis of RF-Microresonators by means of Model Order Reduction 183
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 183
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 183
A Reconfigurable Impedance Matching Network Employing RF-MEMS Switches 182
TCAD study of DLC coatings for large-area high-power diodes 182
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions 181
Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs 181
Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation 181
Leakage current and breakdown of GaN-on-Silicon vertical structures 181
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors 179
TCAD-based investigation on transport properties of Diamond-like carbon coatings for HV-ICs 179
A fully parameterized FEM model for electromagnetic optimization of an RF-MEMS wafer-level package 178
Characterization and modeling of electrical stress degradation in STI-based integrated power devices 178
Steep-slope devices: Prospects and challenges 178
Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight 177
Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs 176
Totale 24.012
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Categoria #
all - tutte 107.489
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 107.489
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20212.361 0 0 0 0 0 190 104 235 475 181 184 992
2021/202212.113 609 193 1.464 1.352 1.543 1.197 1.251 1.233 1.335 395 624 917
2022/20235.221 515 789 270 648 358 352 160 311 933 108 502 275
2023/20241.400 105 262 95 140 113 244 123 77 32 114 42 53
2024/20256.417 358 819 361 523 1.200 225 719 228 55 537 265 1.127
2025/20268.206 1.816 1.445 1.845 905 1.552 643 0 0 0 0 0 0
Totale 46.209