In this paper we present a reconfigurable Class-E Power Amplifier (PA) whose operation frequency covers all uplink bands of GSM standard. We describe the circuit design strategy to reconfigure PA operation frequency maximizing the efficiency. Two dies, manufactured using CMOS and MEMS technologies, are assembled through bondwires in a SiP fashion. Prototypes deliver 20dBm output power with 38% and 26% drain efficiencies at lower and upper bands, respectively. MEMS technological issues degrading performance are also discussed.
A MEMS Reconfigurable Quad-Band Class-E Power Amplifier for GSM Standard / L. Larcher; R. Brama; M. Ganzerli; J. Iannacci; M. Bedani; A. Gnudi. - STAMPA. - (2009), pp. A-A+4. (Intervento presentato al convegno DATE 09 Design, Automation & Test in Europe tenutosi a Nice, France nel 20-24 April, 2009).
A MEMS Reconfigurable Quad-Band Class-E Power Amplifier for GSM Standard
IANNACCI, JACOPO;BEDANI, MARCO;GNUDI, ANTONIO
2009
Abstract
In this paper we present a reconfigurable Class-E Power Amplifier (PA) whose operation frequency covers all uplink bands of GSM standard. We describe the circuit design strategy to reconfigure PA operation frequency maximizing the efficiency. Two dies, manufactured using CMOS and MEMS technologies, are assembled through bondwires in a SiP fashion. Prototypes deliver 20dBm output power with 38% and 26% drain efficiencies at lower and upper bands, respectively. MEMS technological issues degrading performance are also discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
