In this work we present a reconfigurable mid-power Class-E Power Amplifier (PA) operating at ~900MHz and ~1800MHz (GSM standard) realized hybridizing one chip manufactured in AMS 0.35µm CMOS technology and one MEMS sub-network. The CMOS chip realizes the active part of the circuit, whereas the MEMS block (realized in FBK technology) implements a reconfigurable impedance Matching Network (MN) that transforms the 50 Ω antenna load to the 12 Ω impedance required by the PA in order to deliver 20dBm output power in both the GSM operating frequency bands. The prototype of the MEMS/CMOS PA we realized delivers 20dBm with 38% and 26% drain efficiencies at 900MHz and 1800MHz, respectively, demonstrating to be a feasible option compared to standard commercial solutions.
L. Larcher, R. Brama, M. Ganzerli, J. Iannacci, B. Margesin, M. Bedani, et al. (2009). A MEMS reconfigurable quad-band class-E power amplifier for GSM standard. s.l : s.n [10.1109/MEMSYS.2009.4805520].
A MEMS reconfigurable quad-band class-E power amplifier for GSM standard
IANNACCI, JACOPO;BEDANI, MARCO;GNUDI, ANTONIO
2009
Abstract
In this work we present a reconfigurable mid-power Class-E Power Amplifier (PA) operating at ~900MHz and ~1800MHz (GSM standard) realized hybridizing one chip manufactured in AMS 0.35µm CMOS technology and one MEMS sub-network. The CMOS chip realizes the active part of the circuit, whereas the MEMS block (realized in FBK technology) implements a reconfigurable impedance Matching Network (MN) that transforms the 50 Ω antenna load to the 12 Ω impedance required by the PA in order to deliver 20dBm output power in both the GSM operating frequency bands. The prototype of the MEMS/CMOS PA we realized delivers 20dBm with 38% and 26% drain efficiencies at 900MHz and 1800MHz, respectively, demonstrating to be a feasible option compared to standard commercial solutions.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
