In this work we present a reconfigurable mid-power Class-E Power Amplifier (PA) operating at ~900MHz and ~1800MHz (GSM standard) realized hybridizing one chip manufactured in AMS 0.35µm CMOS technology and one MEMS sub-network. The CMOS chip realizes the active part of the circuit, whereas the MEMS block (realized in FBK technology) implements a reconfigurable impedance Matching Network (MN) that transforms the 50 Ω antenna load to the 12 Ω impedance required by the PA in order to deliver 20dBm output power in both the GSM operating frequency bands. The prototype of the MEMS/CMOS PA we realized delivers 20dBm with 38% and 26% drain efficiencies at 900MHz and 1800MHz, respectively, demonstrating to be a feasible option compared to standard commercial solutions.

A MEMS reconfigurable quad-band class-E power amplifier for GSM standard / L. Larcher; R. Brama; M. Ganzerli; J. Iannacci; B. Margesin; M. Bedani; A. Gnudi. - STAMPA. - (2009), pp. 864-867. (Intervento presentato al convegno 22nd IEEE International Conference on Micro Electro Mechanical Systems MEMS 2009 tenutosi a Sorrento, Italy nel 25-29 January 2009) [10.1109/MEMSYS.2009.4805520].

A MEMS reconfigurable quad-band class-E power amplifier for GSM standard

IANNACCI, JACOPO;BEDANI, MARCO;GNUDI, ANTONIO
2009

Abstract

In this work we present a reconfigurable mid-power Class-E Power Amplifier (PA) operating at ~900MHz and ~1800MHz (GSM standard) realized hybridizing one chip manufactured in AMS 0.35µm CMOS technology and one MEMS sub-network. The CMOS chip realizes the active part of the circuit, whereas the MEMS block (realized in FBK technology) implements a reconfigurable impedance Matching Network (MN) that transforms the 50 Ω antenna load to the 12 Ω impedance required by the PA in order to deliver 20dBm output power in both the GSM operating frequency bands. The prototype of the MEMS/CMOS PA we realized delivers 20dBm with 38% and 26% drain efficiencies at 900MHz and 1800MHz, respectively, demonstrating to be a feasible option compared to standard commercial solutions.
2009
Proceedings of the 22nd IEEE International Conference on Micro Electro Mechanical Systems MEMS 2009
864
867
A MEMS reconfigurable quad-band class-E power amplifier for GSM standard / L. Larcher; R. Brama; M. Ganzerli; J. Iannacci; B. Margesin; M. Bedani; A. Gnudi. - STAMPA. - (2009), pp. 864-867. (Intervento presentato al convegno 22nd IEEE International Conference on Micro Electro Mechanical Systems MEMS 2009 tenutosi a Sorrento, Italy nel 25-29 January 2009) [10.1109/MEMSYS.2009.4805520].
L. Larcher; R. Brama; M. Ganzerli; J. Iannacci; B. Margesin; M. Bedani; A. Gnudi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/70460
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