CRIS Current Research Information System

RUDAN, MASSIMO
 Distribuzione geografica
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Continente #
NA - Nord America 9.931
AS - Asia 6.256
EU - Europa 4.708
AF - Africa 469
SA - Sud America 352
Continente sconosciuto - Info sul continente non disponibili 218
OC - Oceania 12
Totale 21.946
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Nazione #
US - Stati Uniti d'America 9.857
CN - Cina 1.735
SG - Singapore 1.690
VN - Vietnam 1.579
GB - Regno Unito 1.306
IT - Italia 678
DE - Germania 597
UA - Ucraina 463
SE - Svezia 446
IN - India 428
HK - Hong Kong 375
FR - Francia 345
RU - Federazione Russa 275
BR - Brasile 240
IE - Irlanda 183
TG - Togo 173
JP - Giappone 122
ZA - Sudafrica 113
KR - Corea 102
EE - Estonia 89
NL - Olanda 80
CI - Costa d'Avorio 68
BG - Bulgaria 54
PL - Polonia 46
AR - Argentina 43
SC - Seychelles 41
CA - Canada 40
NG - Nigeria 37
BD - Bangladesh 33
AT - Austria 29
CH - Svizzera 29
IQ - Iraq 27
PH - Filippine 27
FI - Finlandia 21
EC - Ecuador 20
MX - Messico 20
TH - Thailandia 20
TR - Turchia 20
ES - Italia 18
PK - Pakistan 18
BE - Belgio 13
TW - Taiwan 12
GR - Grecia 11
ID - Indonesia 11
VE - Venezuela 11
AU - Australia 10
CO - Colombia 10
UZ - Uzbekistan 10
PY - Paraguay 9
SA - Arabia Saudita 9
TN - Tunisia 7
CL - Cile 6
ET - Etiopia 6
HU - Ungheria 6
LB - Libano 6
MY - Malesia 6
JO - Giordania 5
KE - Kenya 5
MA - Marocco 5
PE - Perù 5
EG - Egitto 4
EU - Europa 4
AE - Emirati Arabi Uniti 3
BY - Bielorussia 3
CZ - Repubblica Ceca 3
DZ - Algeria 3
GH - Ghana 3
IR - Iran 3
JM - Giamaica 3
LT - Lituania 3
NP - Nepal 3
UY - Uruguay 3
AM - Armenia 2
BO - Bolivia 2
CR - Costa Rica 2
IL - Israele 2
LC - Santa Lucia 2
LV - Lettonia 2
LY - Libia 2
MD - Moldavia 2
NI - Nicaragua 2
PA - Panama 2
PS - Palestinian Territory 2
PT - Portogallo 2
SR - Suriname 2
AZ - Azerbaigian 1
BN - Brunei Darussalam 1
CU - Cuba 1
CY - Cipro 1
DO - Repubblica Dominicana 1
GY - Guiana 1
KH - Cambogia 1
KZ - Kazakistan 1
MZ - Mozambico 1
NC - Nuova Caledonia 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
OM - Oman 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 21.729
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Città #
Ann Arbor 2.235
Singapore 1.152
Southend 1.124
Ashburn 808
Fairfield 768
San Jose 502
Santa Clara 422
Wilmington 411
Chandler 409
Woodbridge 364
Seattle 360
Hong Kong 348
Jacksonville 320
Houston 313
Hefei 293
Dong Ket 277
Ho Chi Minh City 267
Princeton 265
Cambridge 251
Hanoi 246
Beijing 204
Dublin 183
Lomé 173
Dallas 172
Boardman 167
Nanjing 118
Westminster 118
Padova 117
Lauterbourg 106
Council Bluffs 104
Los Angeles 103
Bologna 100
Tokyo 96
Hyderabad 88
Berlin 83
Medford 78
Turin 75
Buffalo 73
Milan 72
Seoul 70
Abidjan 68
Saint Petersburg 62
Mülheim 60
Shenyang 60
Jinan 56
Sofia 52
Changsha 46
San Diego 46
Hebei 42
Da Nang 40
Shanghai 40
Haiphong 38
Nanchang 38
New York 38
Guangzhou 37
Mahé 37
Abeokuta 35
Pune 35
Tianjin 35
São Paulo 31
Orem 30
Redondo Beach 30
Frankfurt am Main 29
Hangzhou 26
Bengaluru 25
Phoenix 24
Zhengzhou 24
Bremen 20
Dearborn 20
Redwood City 20
Verona 20
Jiaxing 19
Ningbo 19
The Dalles 19
Fremont 18
Haikou 18
Helsinki 18
Norwalk 17
San Francisco 17
Amsterdam 16
Biên Hòa 16
Taizhou 16
Vienna 16
Washington 16
Atlanta 15
Bern 15
Rome 15
Chennai 14
London 14
Yubileyny 14
Chicago 13
Kunming 13
Montreal 13
Chengdu 12
Quận Bình Thạnh 12
Warsaw 12
Brussels 11
Guayaquil 11
Shenzhen 11
Denver 10
Totale 15.029
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Nome #
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique 283
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport 272
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 270
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics 269
3D simulation of quantum-wire confining potential for a GaAs/AlGaAs 2DEG heterostructure 252
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 246
Band-Structure Effects in Ultrascaled Silicon Nanowires 246
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 244
Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs 241
Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors 238
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 236
Theoretical foundations of the quantum drift-diffusion and density-gradient models 234
Investigation on single-electron dynamics in coupled GaAs-AlGaAs quantum wires 233
A Method for Determining the Screening Length of the Coulombic Scattering in Non-Degenerate and Degenerate Semiconductors 230
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 229
Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio 229
Investigating the performance limits of silicon nanowires and carbon nanotube FETs 228
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs 228
Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs 224
The density-gradient correction as a disguised pilot wave of de Broglie 221
An improved MPPT algorithm based on hybrid RCC scheme for single-phase PV systems 221
A quantum mechanical analysis of the electrostatics in multiple-gate FETs 219
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures 216
Numerical simulation of ballistic surface transport in cylindrical nanosystems 214
Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes 214
Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices 212
A simulative method for the analysis of conduction properties of ion channels based on first-principle approaches 210
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments 210
Gate current of a ‘well-tempered’ MOSFET simulated with the spherical-harmonic expansion model 210
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach 210
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 210
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 209
Experimental Investigation on Carrier Dynamics at the Thermal Breakdown 208
Adaptive K-NN for the detection of air pollutants with a sensor array 205
Coherent surface transport in cylindrical nanosystems 202
Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs 202
A Simulative Model for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches 198
RCC-MPPT algorithms for single-phase PV systems in case of multiple dc harmonics 198
Theoretical foundations of the quantum drift-diffusion and density-gradient models 195
Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures 194
Semiclassical transport in silicon cylindrical nanowire FETs including surface roughness 193
Closed-form transition rate in hopping conduction 193
A 5th-order method for 1D-device solution 191
Coherent electron transport in bent cylindrical surfaces 191
A New Hopping Model for Transport in Chalcogenide Glasses 190
Comparison of device performance and scaling properties of cylindrical nanowires (CNW) and carbon nanotube (CNT) transistors 188
A Schroedinger-Poisson Solution of CNT-FET Arrays 187
Effects of high-κ (HfO) gate dielectric in double-gate and cylindrical-nanowire MOSFETs scaled to the ultimate technology nodes 183
Investigation about the high temperature impact-ionization coefficient in silicon 182
Experimental investigation on carrier dynamics at the thermal breakdown 179
Design considerations and comparative investigation of ultra-thin SOI, double-gate and cylindrical nanowire FETs 178
Impact-ionization coefficient in silicon at high fields: – A parametric approach 174
Efficient numerics for thermally-assisted trap-limited conduction in chalcogenides 171
Multilevel modeling for charge transport in Ovonic chalcogenide materials and devices 169
Novel 3D random-network model for threshold switching of phase-change memories 168
Effects of band-structure modification in silicon nanowires with small diameters 166
Scaling Properties of Silicon Nanowire and Carbon-Nanotube FETs 166
Self-Heating Phase-Change Memory-Array Demonstrator for True Random Number Generation 166
Automatic Optimization Algorithm for a Direct 2D and 3D Mesh Generation from the Layout Information 165
Computational Analysis of Current and Noise Properties of a Single Open Ion Channel 164
Effects of channel orientation, high-k gate stacks and stress on UTB-FETs: a QDD simulation study 163
Cooperative electron-electron interaction in chalcogenides 161
Band Calculation for the Hexagonal and FCC Chalcogenide Ge2Sb2Te5 160
Comparison of device performance and scaling capability of cylindrical nanowires (CNW) and carbon nanotube (CNT) transistors 158
Electric response of ovonic materials to oscillating potentials 158
Investigation of Charge Transport in Amorphous Ge2Sb2Te5 Using the Variable-Range Hopping Model 157
Improving the accuracy of the Schroedinger-Poisson solution in CNWs and CNTs 157
15th International Conference on Simulation of Semiconductor Processes and Devices 156
Electrical bistability in amorphous semiconductors: A basic analytical theory 156
Numerical simulation of ballistic surface transport in cylindrical nanosystems 156
Extension of the R-Sigma method to any order 155
A Model for Charge Transport in Amorphous GST Based on a Modified Variable-Range Hopping Process 155
Effect of topology on coherent transport through nanotube junctions 154
Physical Mechanisms for Ion-Current Levelling off in the KcsA Channel through Combined Monte Carlo/Molecular Dynamics Simulations 153
Physics of Semiconductor Devices 152
Transient and oscillating response of Ovonic devices for high-speed electronics 152
Monte Carlo simulation of charge transport in amorphous chalcogenides 151
Extension of the R-Sigma method to any order 150
Intrinsic and Extrinsic Stability of Ovonic-Switching Devices 149
Physical Models for Smart-Power Devices 148
Transport Scaling Limits of Ovonic Devices: A Simulative Approach 147
Sistemi di gestione integrati 146
Modeling the Dynamic Self-Heating of PCM 146
Time- and space-dependent electric response of Ovonic devices 146
Shot noise in single open ion channels: A computational approach based on atomistic simulations 144
Quantum mechanical analysis of the electrostatics in silicon nanowires and carbon nanotubes FETs 143
MOS Capacitors, MOS Transistors, and Charge-Transfer Devices 142
Hot-carrier trap-limited transport in switching chalcogenides 141
Implementing physical unclonable functions using PCM arrays 141
Electronic, Optical and Thermal Properties of the Hexagonal and Rock Salt-Like Ge2Sb2Te5 Chalcogenide from First Principle Calculations 140
Effects of the low-field mobility in single-gate and double-gate ultrathin-body MOSFETs scaled to the ultimate technology nodes 140
Modeling of the oscillation decay in PCM 139
Conductive preferential paths of hot carriers in amorphous phase-change materials 139
Time-dependent transport in amorphous semiconductors: Instability in the field-controlled regime 139
The R-Sigma Approach to Tunneling in Nanoscale Devices 138
Modeling of the voltage snap-back in amorphous-GST memory devices 137
Microscopic Description of the Inter-Trap Transitions in a-Chalcogenides 136
High-Order Solution Scheme for Transport in Low-D Devices 135
Ovonic materials for memory nano-devices: Stability of I(V) measurements 135
Monte Carlo simulation of charge transport in amorphous chalcogenides 134
Totale 18.483
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Categoria #
all - tutte 57.735
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 57.735
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20223.837 0 84 473 402 494 411 358 377 394 107 323 414
2022/20232.324 228 457 115 261 147 154 76 88 384 31 218 165
2023/2024569 33 99 51 48 58 150 50 13 12 29 3 23
2024/20252.554 247 435 189 191 590 134 159 26 26 52 62 443
2025/20265.844 319 622 773 416 772 360 572 199 1.105 390 138 178
2026/2027211 153 58 0 0 0 0 0 0 0 0 0 0
Totale 21.946