CRIS Current Research Information System

RUDAN, MASSIMO
 Distribuzione geografica
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Continente #
NA - Nord America 9.460
AS - Asia 6.209
EU - Europa 4.650
AF - Africa 467
SA - Sud America 339
OC - Oceania 12
Continente sconosciuto - Info sul continente non disponibili 5
Totale 21.142
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Nazione #
US - Stati Uniti d'America 9.413
CN - Cina 1.723
SG - Singapore 1.671
VN - Vietnam 1.579
GB - Regno Unito 1.302
IT - Italia 642
DE - Germania 596
UA - Ucraina 463
SE - Svezia 444
IN - India 425
HK - Hong Kong 368
FR - Francia 340
RU - Federazione Russa 275
BR - Brasile 229
IE - Irlanda 183
TG - Togo 173
JP - Giappone 122
ZA - Sudafrica 113
KR - Corea 101
EE - Estonia 89
NL - Olanda 80
CI - Costa d'Avorio 68
BG - Bulgaria 54
PL - Polonia 45
AR - Argentina 43
SC - Seychelles 40
NG - Nigeria 37
BD - Bangladesh 29
CH - Svizzera 29
IQ - Iraq 27
PH - Filippine 27
AT - Austria 25
CA - Canada 23
FI - Finlandia 20
TH - Thailandia 20
TR - Turchia 20
EC - Ecuador 19
PK - Pakistan 18
ES - Italia 17
MX - Messico 17
BE - Belgio 13
TW - Taiwan 12
GR - Grecia 11
ID - Indonesia 11
VE - Venezuela 11
AU - Australia 10
CO - Colombia 10
UZ - Uzbekistan 10
SA - Arabia Saudita 9
PY - Paraguay 8
TN - Tunisia 7
CL - Cile 6
ET - Etiopia 6
LB - Libano 6
MY - Malesia 6
HU - Ungheria 5
JO - Giordania 5
KE - Kenya 5
MA - Marocco 5
PE - Perù 5
EG - Egitto 4
EU - Europa 4
AE - Emirati Arabi Uniti 3
BY - Bielorussia 3
DZ - Algeria 3
IR - Iran 3
LT - Lituania 3
NP - Nepal 3
UY - Uruguay 3
AM - Armenia 2
BO - Bolivia 2
CZ - Repubblica Ceca 2
GH - Ghana 2
IL - Israele 2
LV - Lettonia 2
LY - Libia 2
PA - Panama 2
PS - Palestinian Territory 2
PT - Portogallo 2
SR - Suriname 2
AZ - Azerbaigian 1
BN - Brunei Darussalam 1
CU - Cuba 1
DO - Repubblica Dominicana 1
GY - Guiana 1
JM - Giamaica 1
KH - Cambogia 1
KZ - Kazakistan 1
MD - Moldavia 1
MZ - Mozambico 1
NC - Nuova Caledonia 1
NI - Nicaragua 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
OM - Oman 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SM - San Marino 1
SN - Senegal 1
TT - Trinidad e Tobago 1
Totale 21.141
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Città #
Ann Arbor 2.235
Singapore 1.135
Southend 1.124
Ashburn 777
Fairfield 768
Santa Clara 412
Wilmington 411
Chandler 409
San Jose 404
Woodbridge 364
Seattle 357
Hong Kong 344
Jacksonville 320
Houston 306
Hefei 293
Dong Ket 277
Ho Chi Minh City 267
Princeton 265
Cambridge 251
Hanoi 246
Beijing 200
Dublin 183
Lomé 173
Boardman 166
Dallas 161
Nanjing 118
Westminster 118
Padova 117
Lauterbourg 106
Bologna 99
Tokyo 96
Los Angeles 94
Hyderabad 88
Berlin 83
Medford 78
Turin 75
Buffalo 71
Seoul 70
Abidjan 68
Milan 68
Saint Petersburg 62
Mülheim 60
Shenyang 60
Jinan 56
Sofia 52
Changsha 46
San Diego 45
Hebei 42
Da Nang 40
Haiphong 38
Nanchang 38
Shanghai 38
Guangzhou 37
Mahé 37
Abeokuta 35
Pune 35
Tianjin 35
Redondo Beach 30
Frankfurt am Main 28
Orem 28
Hangzhou 26
Bengaluru 25
New York 25
São Paulo 25
Zhengzhou 24
Bremen 20
Dearborn 20
Redwood City 20
Verona 20
Jiaxing 19
Ningbo 19
The Dalles 19
Fremont 18
Haikou 18
Helsinki 18
Phoenix 18
Norwalk 17
Amsterdam 16
Biên Hòa 16
Taizhou 16
Bern 15
Washington 15
London 14
Yubileyny 14
Council Bluffs 13
Kunming 13
San Francisco 13
Chengdu 12
Chennai 12
Quận Bình Thạnh 12
Rome 12
Vienna 12
Atlanta 11
Brussels 11
Shenzhen 11
Warsaw 11
Chicago 10
Guayaquil 10
Hải Dương 10
Lanzhou 10
Totale 14.679
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Nome #
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique 275
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics 268
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport 266
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 256
3D simulation of quantum-wire confining potential for a GaAs/AlGaAs 2DEG heterostructure 248
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 241
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 237
Band-Structure Effects in Ultrascaled Silicon Nanowires 236
Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors 230
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 228
Investigation on single-electron dynamics in coupled GaAs-AlGaAs quantum wires 227
Theoretical foundations of the quantum drift-diffusion and density-gradient models 227
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 226
A Method for Determining the Screening Length of the Coulombic Scattering in Non-Degenerate and Degenerate Semiconductors 225
Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio 224
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs 223
Investigating the performance limits of silicon nanowires and carbon nanotube FETs 221
Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs 220
The density-gradient correction as a disguised pilot wave of de Broglie 219
An improved MPPT algorithm based on hybrid RCC scheme for single-phase PV systems 219
A quantum mechanical analysis of the electrostatics in multiple-gate FETs 216
Numerical simulation of ballistic surface transport in cylindrical nanosystems 210
Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes 209
A simulative method for the analysis of conduction properties of ion channels based on first-principle approaches 208
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures 208
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments 208
Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices 205
Gate current of a ‘well-tempered’ MOSFET simulated with the spherical-harmonic expansion model 204
Adaptive K-NN for the detection of air pollutants with a sensor array 203
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach 202
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 202
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 201
Coherent surface transport in cylindrical nanosystems 197
Experimental Investigation on Carrier Dynamics at the Thermal Breakdown 197
Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs 197
RCC-MPPT algorithms for single-phase PV systems in case of multiple dc harmonics 196
A Simulative Model for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches 195
Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures 193
Theoretical foundations of the quantum drift-diffusion and density-gradient models 191
Closed-form transition rate in hopping conduction 191
A New Hopping Model for Transport in Chalcogenide Glasses 189
Semiclassical transport in silicon cylindrical nanowire FETs including surface roughness 188
A 5th-order method for 1D-device solution 187
A Schroedinger-Poisson Solution of CNT-FET Arrays 187
Coherent electron transport in bent cylindrical surfaces 186
Comparison of device performance and scaling properties of cylindrical nanowires (CNW) and carbon nanotube (CNT) transistors 184
Investigation about the high temperature impact-ionization coefficient in silicon 180
Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs 178
Effects of high-κ (HfO) gate dielectric in double-gate and cylindrical-nanowire MOSFETs scaled to the ultimate technology nodes 176
Design considerations and comparative investigation of ultra-thin SOI, double-gate and cylindrical nanowire FETs 175
Experimental investigation on carrier dynamics at the thermal breakdown 174
Impact-ionization coefficient in silicon at high fields: – A parametric approach 170
Multilevel modeling for charge transport in Ovonic chalcogenide materials and devices 169
Efficient numerics for thermally-assisted trap-limited conduction in chalcogenides 166
Novel 3D random-network model for threshold switching of phase-change memories 164
Effects of band-structure modification in silicon nanowires with small diameters 163
Scaling Properties of Silicon Nanowire and Carbon-Nanotube FETs 162
Automatic Optimization Algorithm for a Direct 2D and 3D Mesh Generation from the Layout Information 162
Effects of channel orientation, high-k gate stacks and stress on UTB-FETs: a QDD simulation study 160
Computational Analysis of Current and Noise Properties of a Single Open Ion Channel 160
Cooperative electron-electron interaction in chalcogenides 160
Self-Heating Phase-Change Memory-Array Demonstrator for True Random Number Generation 160
Comparison of device performance and scaling capability of cylindrical nanowires (CNW) and carbon nanotube (CNT) transistors 158
Band Calculation for the Hexagonal and FCC Chalcogenide Ge2Sb2Te5 157
Improving the accuracy of the Schroedinger-Poisson solution in CNWs and CNTs 156
Investigation of Charge Transport in Amorphous Ge2Sb2Te5 Using the Variable-Range Hopping Model 155
Electric response of ovonic materials to oscillating potentials 155
A Model for Charge Transport in Amorphous GST Based on a Modified Variable-Range Hopping Process 154
Numerical simulation of ballistic surface transport in cylindrical nanosystems 153
Extension of the R-Sigma method to any order 152
Electrical bistability in amorphous semiconductors: A basic analytical theory 152
Effect of topology on coherent transport through nanotube junctions 152
Transient and oscillating response of Ovonic devices for high-speed electronics 152
Physical Mechanisms for Ion-Current Levelling off in the KcsA Channel through Combined Monte Carlo/Molecular Dynamics Simulations 150
Monte Carlo simulation of charge transport in amorphous chalcogenides 150
15th International Conference on Simulation of Semiconductor Processes and Devices 149
Extension of the R-Sigma method to any order 148
Modeling the Dynamic Self-Heating of PCM 146
Intrinsic and Extrinsic Stability of Ovonic-Switching Devices 145
Physical Models for Smart-Power Devices 145
Transport Scaling Limits of Ovonic Devices: A Simulative Approach 144
Physics of Semiconductor Devices 143
Quantum mechanical analysis of the electrostatics in silicon nanowires and carbon nanotubes FETs 143
Time- and space-dependent electric response of Ovonic devices 143
Shot noise in single open ion channels: A computational approach based on atomistic simulations 141
Electronic, Optical and Thermal Properties of the Hexagonal and Rock Salt-Like Ge2Sb2Te5 Chalcogenide from First Principle Calculations 140
Effects of the low-field mobility in single-gate and double-gate ultrathin-body MOSFETs scaled to the ultimate technology nodes 140
Sistemi di gestione integrati 139
Hot-carrier trap-limited transport in switching chalcogenides 138
Conductive preferential paths of hot carriers in amorphous phase-change materials 137
The R-Sigma Approach to Tunneling in Nanoscale Devices 137
Implementing physical unclonable functions using PCM arrays 137
Modeling of the voltage snap-back in amorphous-GST memory devices 137
Microscopic Description of the Inter-Trap Transitions in a-Chalcogenides 136
MOS Capacitors, MOS Transistors, and Charge-Transfer Devices 135
Time-dependent transport in amorphous semiconductors: Instability in the field-controlled regime 135
Ovonic materials for memory nano-devices: Stability of I(V) measurements 135
High-Order Solution Scheme for Transport in Low-D Devices 134
Quantum Electronic Trap-to-Band Transitions in Chalcogenides Induced by Electron-Electron Interaction 132
Experimental investigation on the Coulomb screening length in silicon 131
Totale 18.035
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Categoria #
all - tutte 53.181
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 53.181
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021649 0 0 0 0 0 0 0 0 0 98 92 459
2021/20224.164 327 84 473 402 494 411 358 377 394 107 323 414
2022/20232.324 228 457 115 261 147 154 76 88 384 31 218 165
2023/2024569 33 99 51 48 58 150 50 13 12 29 3 23
2024/20252.554 247 435 189 191 590 134 159 26 26 52 62 443
2025/20265.464 319 622 773 416 772 360 572 199 1.105 326 0 0
Totale 21.355