CRIS Current Research Information System

RUDAN, MASSIMO
 Distribuzione geografica
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Continente #
NA - Nord America 8.847
AS - Asia 4.871
EU - Europa 4.456
AF - Africa 439
SA - Sud America 285
OC - Oceania 12
Continente sconosciuto - Info sul continente non disponibili 5
Totale 18.915
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Nazione #
US - Stati Uniti d'America 8.810
CN - Cina 1.549
SG - Singapore 1.519
GB - Regno Unito 1.287
VN - Vietnam 827
IT - Italia 621
DE - Germania 585
UA - Ucraina 461
SE - Svezia 443
IN - India 385
HK - Hong Kong 345
RU - Federazione Russa 273
FR - Francia 229
BR - Brasile 206
IE - Irlanda 183
TG - Togo 173
ZA - Sudafrica 108
JP - Giappone 101
EE - Estonia 89
KR - Corea 83
NL - Olanda 74
CI - Costa d'Avorio 68
BG - Bulgaria 53
PL - Polonia 42
SC - Seychelles 40
AR - Argentina 38
NG - Nigeria 37
CH - Svizzera 29
AT - Austria 25
CA - Canada 20
EC - Ecuador 17
MX - Messico 14
BE - Belgio 13
ES - Italia 11
FI - Finlandia 11
GR - Grecia 11
TR - Turchia 11
AU - Australia 10
BD - Bangladesh 10
ID - Indonesia 9
IQ - Iraq 6
LB - Libano 6
PY - Paraguay 6
CL - Cile 4
CO - Colombia 4
EU - Europa 4
JO - Giordania 4
MA - Marocco 4
PE - Perù 4
BY - Bielorussia 3
HU - Ungheria 3
IR - Iran 3
LT - Lituania 3
TN - Tunisia 3
UZ - Uzbekistan 3
BO - Bolivia 2
CZ - Repubblica Ceca 2
DZ - Algeria 2
KE - Kenya 2
MY - Malesia 2
UY - Uruguay 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
BN - Brunei Darussalam 1
EG - Egitto 1
GH - Ghana 1
JM - Giamaica 1
KH - Cambogia 1
KZ - Kazakistan 1
MD - Moldavia 1
NC - Nuova Caledonia 1
NI - Nicaragua 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
PA - Panama 1
PK - Pakistan 1
PT - Portogallo 1
SA - Arabia Saudita 1
SK - Slovacchia (Repubblica Slovacca) 1
SM - San Marino 1
SR - Suriname 1
TH - Thailandia 1
VE - Venezuela 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 18.915
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Città #
Ann Arbor 2.235
Southend 1.124
Singapore 1.002
Fairfield 768
Ashburn 723
Wilmington 411
Santa Clara 410
Chandler 409
Woodbridge 364
Seattle 357
Hong Kong 336
Jacksonville 320
Houston 306
Hefei 291
Dong Ket 277
Princeton 265
Cambridge 251
Beijing 198
Dublin 183
Lomé 173
Boardman 166
Dallas 160
Westminster 118
Padova 117
Nanjing 116
Bologna 98
Ho Chi Minh City 89
Los Angeles 89
Tokyo 88
Hyderabad 87
Berlin 83
Medford 78
Turin 74
Hanoi 71
Seoul 70
Buffalo 69
Abidjan 68
Saint Petersburg 62
Milan 60
Mülheim 60
Shenyang 59
Jinan 55
Sofia 52
San Diego 45
Changsha 44
Hebei 42
Nanchang 38
Mahé 37
Abeokuta 35
Pune 34
Tianjin 33
Redondo Beach 30
Guangzhou 26
Shanghai 26
Bengaluru 25
Hangzhou 24
Frankfurt am Main 23
São Paulo 22
Zhengzhou 22
Bremen 20
Dearborn 20
Redwood City 20
Verona 20
Jiaxing 19
Fremont 18
Haikou 18
New York 18
Ningbo 18
Norwalk 17
Phoenix 17
Taizhou 16
Bern 15
Washington 15
London 14
Yubileyny 14
Kunming 13
San Francisco 13
Biên Hòa 12
Vienna 12
Amsterdam 11
Brussels 11
Orem 11
Rome 11
Guayaquil 10
Lanzhou 10
Olalla 10
Chengdu 9
Des Moines 9
Falls Church 9
Genzano Di Roma 9
Helsinki 9
Modena 9
Monteprandone 9
Warsaw 9
Denver 8
Fuzhou 8
Haiphong 8
Montreal 8
Rio de Janeiro 8
Taiyuan 8
Totale 13.421
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Nome #
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique 264
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics 252
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport 249
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 228
3D simulation of quantum-wire confining potential for a GaAs/AlGaAs 2DEG heterostructure 227
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 226
A Method for Determining the Screening Length of the Coulombic Scattering in Non-Degenerate and Degenerate Semiconductors 220
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 219
Band-Structure Effects in Ultrascaled Silicon Nanowires 216
Investigation on single-electron dynamics in coupled GaAs-AlGaAs quantum wires 212
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 212
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 210
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs 207
Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors 206
A simulative method for the analysis of conduction properties of ion channels based on first-principle approaches 203
Investigating the performance limits of silicon nanowires and carbon nanotube FETs 203
Theoretical foundations of the quantum drift-diffusion and density-gradient models 203
Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs 202
A quantum mechanical analysis of the electrostatics in multiple-gate FETs 202
The density-gradient correction as a disguised pilot wave of de Broglie 198
Adaptive K-NN for the detection of air pollutants with a sensor array 198
Gate current of a ‘well-tempered’ MOSFET simulated with the spherical-harmonic expansion model 198
Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio 198
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments 196
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures 195
An improved MPPT algorithm based on hybrid RCC scheme for single-phase PV systems 195
Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices 193
Numerical simulation of ballistic surface transport in cylindrical nanosystems 193
Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes 191
A Simulative Model for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches 189
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach 189
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 185
Experimental Investigation on Carrier Dynamics at the Thermal Breakdown 184
Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs 184
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 183
Coherent surface transport in cylindrical nanosystems 181
Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures 176
A New Hopping Model for Transport in Chalcogenide Glasses 175
Coherent electron transport in bent cylindrical surfaces 174
Theoretical foundations of the quantum drift-diffusion and density-gradient models 173
RCC-MPPT algorithms for single-phase PV systems in case of multiple dc harmonics 172
Comparison of device performance and scaling properties of cylindrical nanowires (CNW) and carbon nanotube (CNT) transistors 170
Closed-form transition rate in hopping conduction 169
Semiclassical transport in silicon cylindrical nanowire FETs including surface roughness 168
A Schroedinger-Poisson Solution of CNT-FET Arrays 168
Experimental investigation on carrier dynamics at the thermal breakdown 165
A 5th-order method for 1D-device solution 164
Design considerations and comparative investigation of ultra-thin SOI, double-gate and cylindrical nanowire FETs 163
Impact-ionization coefficient in silicon at high fields: – A parametric approach 161
Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs 161
Investigation about the high temperature impact-ionization coefficient in silicon 159
Scaling Properties of Silicon Nanowire and Carbon-Nanotube FETs 156
Automatic Optimization Algorithm for a Direct 2D and 3D Mesh Generation from the Layout Information 155
Effects of high-κ (HfO) gate dielectric in double-gate and cylindrical-nanowire MOSFETs scaled to the ultimate technology nodes 154
Effects of band-structure modification in silicon nanowires with small diameters 153
Effects of channel orientation, high-k gate stacks and stress on UTB-FETs: a QDD simulation study 150
Computational Analysis of Current and Noise Properties of a Single Open Ion Channel 149
Multilevel modeling for charge transport in Ovonic chalcogenide materials and devices 149
Novel 3D random-network model for threshold switching of phase-change memories 148
Band Calculation for the Hexagonal and FCC Chalcogenide Ge2Sb2Te5 145
Physical Mechanisms for Ion-Current Levelling off in the KcsA Channel through Combined Monte Carlo/Molecular Dynamics Simulations 144
Cooperative electron-electron interaction in chalcogenides 144
Comparison of device performance and scaling capability of cylindrical nanowires (CNW) and carbon nanotube (CNT) transistors 144
Improving the accuracy of the Schroedinger-Poisson solution in CNWs and CNTs 142
Numerical simulation of ballistic surface transport in cylindrical nanosystems 140
Investigation of Charge Transport in Amorphous Ge2Sb2Te5 Using the Variable-Range Hopping Model 138
Efficient numerics for thermally-assisted trap-limited conduction in chalcogenides 138
Effect of topology on coherent transport through nanotube junctions 138
A Model for Charge Transport in Amorphous GST Based on a Modified Variable-Range Hopping Process 136
Extension of the R-Sigma method to any order 135
Physical Models for Smart-Power Devices 134
Monte Carlo simulation of charge transport in amorphous chalcogenides 134
Shot noise in single open ion channels: A computational approach based on atomistic simulations 132
15th International Conference on Simulation of Semiconductor Processes and Devices 132
Electrical bistability in amorphous semiconductors: A basic analytical theory 132
Transient and oscillating response of Ovonic devices for high-speed electronics 132
Modeling the Dynamic Self-Heating of PCM 131
Electric response of ovonic materials to oscillating potentials 129
Extension of the R-Sigma method to any order 128
Sistemi di gestione integrati 127
Electronic, Optical and Thermal Properties of the Hexagonal and Rock Salt-Like Ge2Sb2Te5 Chalcogenide from First Principle Calculations 126
The R-Sigma Approach to Tunneling in Nanoscale Devices 125
High-Order Solution Scheme for Transport in Low-D Devices 124
Monte Carlo simulation of charge transport in amorphous chalcogenides 124
Time- and space-dependent electric response of Ovonic devices 124
Microscopic Description of the Inter-Trap Transitions in a-Chalcogenides 123
Effects of the low-field mobility in single-gate and double-gate ultrathin-body MOSFETs scaled to the ultimate technology nodes 123
Quantum mechanical analysis of the electrostatics in silicon nanowires and carbon nanotubes FETs 123
Self-Heating Phase-Change Memory-Array Demonstrator for True Random Number Generation 123
Experimental investigation on the Coulomb screening length in silicon 122
Modeling of the voltage snap-back in amorphous-GST memory devices 122
Conductive preferential paths of hot carriers in amorphous phase-change materials 121
Quantum Electronic Trap-to-Band Transitions in Chalcogenides Induced by Electron-Electron Interaction 119
Intrinsic and Extrinsic Stability of Ovonic-Switching Devices 119
Voltage Snapback in Amorphous-GST Memory Devices: Transport Model and Validation 118
Hot-carrier trap-limited transport in switching chalcogenides 118
Transport Scaling Limits of Ovonic Devices: A Simulative Approach 117
Physics of Semiconductor Devices 116
Current Fluctuations in Degenerate Non-Equilibrium Systems 115
Diffusion and high-frequency noise of electrons in amorphous semiconductors at low electric fields 114
Totale 16.414
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Categoria #
all - tutte 49.290
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 49.290
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.021 0 0 0 0 0 107 11 116 138 98 92 459
2021/20224.164 327 84 473 402 494 411 358 377 394 107 323 414
2022/20232.324 228 457 115 261 147 154 76 88 384 31 218 165
2023/2024569 33 99 51 48 58 150 50 13 12 29 3 23
2024/20252.554 247 435 189 191 590 134 159 26 26 52 62 443
2025/20263.200 319 622 773 416 772 298 0 0 0 0 0 0
Totale 19.091