CRIS Current Research Information System

RUDAN, MASSIMO
 Distribuzione geografica
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Continente #
NA - Nord America 7.391
EU - Europa 3.975
AS - Asia 1.413
AF - Africa 369
OC - Oceania 9
Continente sconosciuto - Info sul continente non disponibili 4
SA - Sud America 3
Totale 13.164
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Nazione #
US - Stati Uniti d'America 7.383
GB - Regno Unito 1.262
DE - Germania 555
VN - Vietnam 549
CN - Cina 534
IT - Italia 491
UA - Ucraina 446
SE - Svezia 437
IN - India 254
IE - Irlanda 183
FR - Francia 179
TG - Togo 173
RU - Federazione Russa 155
ZA - Sudafrica 94
EE - Estonia 88
BG - Bulgaria 52
SC - Seychelles 39
NG - Nigeria 36
CH - Svizzera 28
PL - Polonia 26
JP - Giappone 24
CI - Costa d'Avorio 23
AT - Austria 22
SG - Singapore 15
BE - Belgio 13
NL - Olanda 13
GR - Grecia 10
AU - Australia 9
TR - Turchia 9
FI - Finlandia 8
HK - Hong Kong 8
CA - Canada 7
LB - Libano 6
EU - Europa 4
IR - Iran 3
JO - Giordania 3
KR - Corea 3
BR - Brasile 2
CZ - Repubblica Ceca 2
HU - Ungheria 2
BD - Bangladesh 1
CL - Cile 1
DZ - Algeria 1
EG - Egitto 1
ID - Indonesia 1
MA - Marocco 1
MX - Messico 1
NO - Norvegia 1
PK - Pakistan 1
PT - Portogallo 1
SA - Arabia Saudita 1
SK - Slovacchia (Repubblica Slovacca) 1
TN - Tunisia 1
UZ - Uzbekistan 1
Totale 13.164
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Città #
Ann Arbor 2.235
Southend 1.124
Fairfield 768
Ashburn 590
Chandler 409
Wilmington 408
Woodbridge 364
Seattle 349
Jacksonville 318
Houston 303
Dong Ket 277
Princeton 265
Cambridge 251
Dublin 183
Lomé 173
Westminster 118
Padova 117
Nanjing 106
Berlin 83
Medford 78
Turin 70
Bologna 69
Saint Petersburg 62
Mülheim 60
Shenyang 58
Sofia 52
Jinan 51
San Diego 45
Milan 44
Hebei 42
Nanchang 38
Changsha 37
Mahé 37
Abeokuta 35
Pune 34
Tianjin 25
Abidjan 23
Boardman 20
Bremen 20
Dearborn 20
Redwood City 20
Beijing 18
Fremont 18
Hangzhou 18
Jiaxing 18
Verona 18
Haikou 17
Norwalk 17
Ningbo 16
Bern 15
Tokyo 14
Washington 13
Taizhou 12
Zhengzhou 12
Brussels 11
Kunming 11
Vienna 11
Olalla 10
Des Moines 9
Falls Church 9
Genzano Di Roma 9
Guangzhou 9
Modena 9
Monteprandone 9
San Francisco 9
Singapore 9
Helsinki 8
Lanzhou 8
London 8
Fuzhou 7
Los Angeles 7
Taiyuan 7
Central 6
Istanbul 6
Paris 6
Bühl 5
Frankfurt Am Main 5
Groningen 5
Redmond 5
Shanghai 5
Aachen 4
Buffalo 4
Casalecchio Di Reno 4
Graz 4
New Delhi 4
Rome 4
San Venanzo 4
Sydney 4
Ulan-ude 4
Amman 3
Amsterdam 3
Cesena 3
Chicago 3
Clarksburg 3
Clearwater 3
Frankfurt am Main 3
Hefei 3
Hyderabad 3
Lausanne 3
Muizenberg 3
Totale 9.859
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Nome #
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique 208
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics 193
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport 191
3D simulation of quantum-wire confining potential for a GaAs/AlGaAs 2DEG heterostructure 180
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 171
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 165
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 163
A quantum mechanical analysis of the electrostatics in multiple-gate FETs 161
An improved MPPT algorithm based on hybrid RCC scheme for single-phase PV systems 161
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs 160
A Method for Determining the Screening Length of the Coulombic Scattering in Non-Degenerate and Degenerate Semiconductors 158
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 157
A simulative method for the analysis of conduction properties of ion channels based on first-principle approaches 155
Band-Structure Effects in Ultrascaled Silicon Nanowires 155
Gate current of a ‘well-tempered’ MOSFET simulated with the spherical-harmonic expansion model 154
Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors 154
Investigation on single-electron dynamics in coupled GaAs-AlGaAs quantum wires 148
Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio 147
Adaptive K-NN for the detection of air pollutants with a sensor array 145
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 145
Theoretical foundations of the quantum drift-diffusion and density-gradient models 144
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments 143
Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs 142
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 142
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures 140
Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes 139
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 138
RCC-MPPT algorithms for single-phase PV systems in case of multiple dc harmonics 138
Coherent electron transport in bent cylindrical surfaces 138
Experimental Investigation on Carrier Dynamics at the Thermal Breakdown 137
A New Hopping Model for Transport in Chalcogenide Glasses 137
Investigating the performance limits of silicon nanowires and carbon nanotube FETs 136
Numerical simulation of ballistic surface transport in cylindrical nanosystems 136
Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs 136
The density-gradient correction as a disguised pilot wave of de Broglie 135
A Simulative Model for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches 134
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach 134
Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices 133
Coherent surface transport in cylindrical nanosystems 129
A Schroedinger-Poisson Solution of CNT-FET Arrays 129
Comparison of device performance and scaling properties of cylindrical nanowires (CNW) and carbon nanotube (CNT) transistors 128
Scaling Properties of Silicon Nanowire and Carbon-Nanotube FETs 128
Closed-form transition rate in hopping conduction 128
Automatic Optimization Algorithm for a Direct 2D and 3D Mesh Generation from the Layout Information 127
Design considerations and comparative investigation of ultra-thin SOI, double-gate and cylindrical nanowire FETs 126
Semiclassical transport in silicon cylindrical nanowire FETs including surface roughness 126
Impact-ionization coefficient in silicon at high fields: – A parametric approach 126
Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures 126
Computational Analysis of Current and Noise Properties of a Single Open Ion Channel 124
Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs 122
Experimental investigation on carrier dynamics at the thermal breakdown 118
A 5th-order method for 1D-device solution 118
Effects of band-structure modification in silicon nanowires with small diameters 117
Effects of channel orientation, high-k gate stacks and stress on UTB-FETs: a QDD simulation study 116
Investigation about the high temperature impact-ionization coefficient in silicon 115
Multilevel modeling for charge transport in Ovonic chalcogenide materials and devices 112
Comparison of device performance and scaling capability of cylindrical nanowires (CNW) and carbon nanotube (CNT) transistors 111
Band Calculation for the Hexagonal and FCC Chalcogenide Ge2Sb2Te5 110
Monte Carlo simulation of charge transport in amorphous chalcogenides 110
Improving the accuracy of the Schroedinger-Poisson solution in CNWs and CNTs 109
Numerical simulation of ballistic surface transport in cylindrical nanosystems 107
Effect of topology on coherent transport through nanotube junctions 106
Theoretical foundations of the quantum drift-diffusion and density-gradient models 106
Effects of high-κ (HfO) gate dielectric in double-gate and cylindrical-nanowire MOSFETs scaled to the ultimate technology nodes 104
Physical Models for Smart-Power Devices 103
Investigation of Charge Transport in Amorphous Ge2Sb2Te5 Using the Variable-Range Hopping Model 102
A Model for Charge Transport in Amorphous GST Based on a Modified Variable-Range Hopping Process 101
Extension of the R-Sigma method to any order 99
Extension of the R-Sigma method to any order 98
Modeling the Dynamic Self-Heating of PCM 97
Efficient numerics for thermally-assisted trap-limited conduction in chalcogenides 96
Electronic, Optical and Thermal Properties of the Hexagonal and Rock Salt-Like Ge2Sb2Te5 Chalcogenide from First Principle Calculations 95
15th International Conference on Simulation of Semiconductor Processes and Devices 95
Electrical bistability in amorphous semiconductors: A basic analytical theory 95
The R-Sigma Approach to Tunneling in Nanoscale Devices 94
Novel 3D random-network model for threshold switching of phase-change memories 93
Experimental investigation on the Coulomb screening length in silicon 93
Physical Mechanisms for Ion-Current Levelling off in the KcsA Channel through Combined Monte Carlo/Molecular Dynamics Simulations 92
Transient and oscillating response of Ovonic devices for high-speed electronics 92
Shot noise in single open ion channels: A computational approach based on atomistic simulations 91
Electric response of ovonic materials to oscillating potentials 91
Monte Carlo simulation of charge transport in amorphous chalcogenides 91
Modeling of the voltage snap-back in amorphous-GST memory devices 90
Current Fluctuations in Degenerate Non-Equilibrium Systems 88
Quantum mechanical analysis of the electrostatics in silicon nanowires and carbon nanotubes FETs 88
High-Order Solution Scheme for Transport in Low-D Devices 87
Conductive preferential paths of hot carriers in amorphous phase-change materials 86
Microscopic Description of the Inter-Trap Transitions in a-Chalcogenides 86
Quantum Electronic Trap-to-Band Transitions in Chalcogenides Induced by Electron-Electron Interaction 86
Diffusion and high-frequency noise of electrons in amorphous semiconductors at low electric fields 86
Self-Heating Phase-Change Memory-Array Demonstrator for True Random Number Generation 86
Voltage Snapback in Amorphous-GST Memory Devices: Transport Model and Validation 85
Effects of the low-field mobility in single-gate and double-gate ultrathin-body MOSFETs scaled to the ultimate technology nodes 82
Time- and space-dependent electric response of Ovonic devices 82
Hot-carrier trap-limited transport in switching chalcogenides 81
Implementing physical unclonable functions using PCM arrays 80
Physics of Semiconductor Devices 79
Shot noise in single open ion channels: a computational approach based on atomistic simulations 78
Ovonic materials for memory nano-devices: Stability of I(V) measurements 77
Transport Scaling Limits of Ovonic Devices: A Simulative Approach 77
Totale 12.053
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Categoria #
all - tutte 29.568
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 29.568
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20203.347 540 60 66 222 331 330 414 456 418 220 84 206
2020/20211.691 359 138 37 103 33 107 11 116 138 98 92 459
2021/20224.164 327 84 473 402 494 411 358 377 394 107 323 414
2022/20232.324 228 457 115 261 147 154 76 88 384 31 218 165
2023/2024569 33 99 51 48 58 150 50 13 12 29 3 23
Totale 13.337