An important contribution to charge transport in amorphous-chalcogenide materials used for manufacturing memory devices is due to the trap-to-trap transitions. Here the physics of the phenomenon is worked out as a combination of energy and space transitions, and its probability is expressed in closed form in terms of microscopic parameters. The results are useful for setting up the macroscopic master equation to be used in Monte Carlo analysis or TCAD codes.
Microscopic Description of the Inter-Trap Transitions in a-Chalcogenides / M. Rudan; F. Giovanardi; R. Brunetti; F. Buscemi; G. Marcolini. - STAMPA. - (2013), pp. 428-431. (Intervento presentato al convegno International Conference on SImulation of Semiconductor Processes and Devices tenutosi a Glasgow nel September 3-5, 2013) [10.1109/SISPAD.2013.6650666].
Microscopic Description of the Inter-Trap Transitions in a-Chalcogenides
RUDAN, MASSIMO;GIOVANARDI, FABIO;BUSCEMI, FABRIZIO;MARCOLINI, GIULIANO
2013
Abstract
An important contribution to charge transport in amorphous-chalcogenide materials used for manufacturing memory devices is due to the trap-to-trap transitions. Here the physics of the phenomenon is worked out as a combination of energy and space transitions, and its probability is expressed in closed form in terms of microscopic parameters. The results are useful for setting up the macroscopic master equation to be used in Monte Carlo analysis or TCAD codes.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
