The I(V ) characteristics of amorphous GST devices show a peculiar S-shape behavior, that is a swift rise of the current along with a voltage snap-back. This type of characteristics led to a growing research interest in view of the future application of such materials to the manufacturing of phase-change memory devices. In this work we adopt a generalization of the variable-range hopping theory to simulate charge transport in a layer of amorphous Ge2Sb2Te5 sandwiched between two planar metallic electrodes. The numerical implementation of a current-driven Monte Carlo code allows one both to provide a complete microscopic particle picture of electrical conduction in the device and to better analyze the mechanisms governing the snap-back effect.
Monte Carlo simulation of charge transport in amorphous chalcogenides / Piccinini E.; Buscemi F.; Rudan M.; Brunetti R.; Jacoboni C.. - In: JOURNAL OF PHYSICS. CONFERENCE SERIES. - ISSN 1742-6588. - STAMPA. - 193:(2009), pp. 012022-1-012022-4. (Intervento presentato al convegno 16th international conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16) tenutosi a Montpellier, France nel Aug. 24-28 2009) [10.1088/1742-6596/193/1/012022].
Monte Carlo simulation of charge transport in amorphous chalcogenides
PICCININI, ENRICO;BUSCEMI, FABRIZIO;RUDAN, MASSIMO;
2009
Abstract
The I(V ) characteristics of amorphous GST devices show a peculiar S-shape behavior, that is a swift rise of the current along with a voltage snap-back. This type of characteristics led to a growing research interest in view of the future application of such materials to the manufacturing of phase-change memory devices. In this work we adopt a generalization of the variable-range hopping theory to simulate charge transport in a layer of amorphous Ge2Sb2Te5 sandwiched between two planar metallic electrodes. The numerical implementation of a current-driven Monte Carlo code allows one both to provide a complete microscopic particle picture of electrical conduction in the device and to better analyze the mechanisms governing the snap-back effect.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
