In this work we investigate the performance of silicon nanowire and carbon-nanotube FETs at their extreme miniaturization limits. The model self-consistently solves the Schroedinger and Poisson equations using the Quantum Transmitting Boundary Method (QTBM) formalism. We compare the subthreshold slope, the drain-induced barrier lowering and the Ion/Ioff ratio versus diameter and gate length. The performance comparison demonstrates that the nanowire FET provides a better scaling trend at very low size despite its weaker gate control on the device electrostatics.
Scaling Properties of Silicon Nanowire and Carbon-Nanotube FETs / E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani. - In: JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE. - ISSN 1546-1955. - STAMPA. - 5:(2008), pp. 1145-1151. [10.1166/jctn.2008.013]
Scaling Properties of Silicon Nanowire and Carbon-Nanotube FETs
GNANI, ELENA;REGGIANI, SUSANNA;GNUDI, ANTONIO;RUDAN, MASSIMO;BACCARANI, GIORGIO
2008
Abstract
In this work we investigate the performance of silicon nanowire and carbon-nanotube FETs at their extreme miniaturization limits. The model self-consistently solves the Schroedinger and Poisson equations using the Quantum Transmitting Boundary Method (QTBM) formalism. We compare the subthreshold slope, the drain-induced barrier lowering and the Ion/Ioff ratio versus diameter and gate length. The performance comparison demonstrates that the nanowire FET provides a better scaling trend at very low size despite its weaker gate control on the device electrostatics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
