An analytical theory of electrical bistability in amorphous semiconductors is presented, based on some very general and essential assumptions and few equations of simple and clear physical meaning. The theory has been validated by comparisons with experimental transport data in chalcogenide materials and provides predictive analytical expressions for field and current values at the switching point.
F. Buscemi, E. Piccinini, A. Cappelli, R. Brunetti, M. Rudan, C. Jacoboni (2014). Electrical bistability in amorphous semiconductors: A basic analytical theory. APPLIED PHYSICS LETTERS, 104, 022101-1-022101-4 [10.1063/1.4861658].
Electrical bistability in amorphous semiconductors: A basic analytical theory
BUSCEMI, FABRIZIO;PICCININI, ENRICO;RUDAN, MASSIMO;
2014
Abstract
An analytical theory of electrical bistability in amorphous semiconductors is presented, based on some very general and essential assumptions and few equations of simple and clear physical meaning. The theory has been validated by comparisons with experimental transport data in chalcogenide materials and provides predictive analytical expressions for field and current values at the switching point.File in questo prodotto:
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