A time-dependent trap-limited conduction scheme is used to analyze the transient behavior of bistable homogeneous amorphous semiconductors when either the electric field or the current density is prescribed. Numerical outcomes confirm that, for a current-controlled system, the working point is unique and stable in any region of the current-voltage characteristic, while in a field-controlled system the negative differential-resistance region is unstable even in absence of circuit parasitics. The proposed theoretical approach represents a valid tool to grasp the relevant time-dependent features of the Ovonic switching in chalcogenide materials.
Time-dependent transport in amorphous semiconductors: Instability in the field-controlled regime / Buscemi F.; Piccinini E.; Brunetti R.; Rudan M.; Jacoboni C.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 104:(2014), pp. 262106.262106-1-262106.262106-4. [10.1063/1.4886962]
Time-dependent transport in amorphous semiconductors: Instability in the field-controlled regime
BUSCEMI, FABRIZIO;PICCININI, ENRICO;RUDAN, MASSIMO;
2014
Abstract
A time-dependent trap-limited conduction scheme is used to analyze the transient behavior of bistable homogeneous amorphous semiconductors when either the electric field or the current density is prescribed. Numerical outcomes confirm that, for a current-controlled system, the working point is unique and stable in any region of the current-voltage characteristic, while in a field-controlled system the negative differential-resistance region is unstable even in absence of circuit parasitics. The proposed theoretical approach represents a valid tool to grasp the relevant time-dependent features of the Ovonic switching in chalcogenide materials.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
