Low-field measurements of carrier mobility, coupled with a perturbative, analytical calculation of the momentum–relaxation time, provide a method for a direct experimental extraction of the relation between the impurity concentration and the inverse screening length involved in the Coulombic scattering. The method is applied here to the non-degenerate, fully ionized case, showing significant differences with respect to the same quantity as derived from the solution of Poisson’s equation.

Experimental investigation on the Coulomb screening length in silicon

RUDAN, MASSIMO;PERRONI, GIANCARLO
2004

Abstract

Low-field measurements of carrier mobility, coupled with a perturbative, analytical calculation of the momentum–relaxation time, provide a method for a direct experimental extraction of the relation between the impurity concentration and the inverse screening length involved in the Coulombic scattering. The method is applied here to the non-degenerate, fully ionized case, showing significant differences with respect to the same quantity as derived from the solution of Poisson’s equation.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
M. Rudan; G. Perroni
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/14102
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