Low-field measurements of carrier mobility, coupled with a perturbative, analytical calculation of the momentum–relaxation time, provide a method for a direct experimental extraction of the relation between the impurity concentration and the inverse screening length involved in the Coulombic scattering. The method is applied here to the non-degenerate, fully ionized case, showing significant differences with respect to the same quantity as derived from the solution of Poisson’s equation.

Experimental investigation on the Coulomb screening length in silicon / M. Rudan; G. Perroni. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - STAMPA. - 19:(2004), pp. 82-83. [10.1088/0268-1242/19/4/029]

Experimental investigation on the Coulomb screening length in silicon

RUDAN, MASSIMO;PERRONI, GIANCARLO
2004

Abstract

Low-field measurements of carrier mobility, coupled with a perturbative, analytical calculation of the momentum–relaxation time, provide a method for a direct experimental extraction of the relation between the impurity concentration and the inverse screening length involved in the Coulombic scattering. The method is applied here to the non-degenerate, fully ionized case, showing significant differences with respect to the same quantity as derived from the solution of Poisson’s equation.
2004
Experimental investigation on the Coulomb screening length in silicon / M. Rudan; G. Perroni. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - STAMPA. - 19:(2004), pp. 82-83. [10.1088/0268-1242/19/4/029]
M. Rudan; G. Perroni
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/14102
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