In this work we investigate the performance of double-gate (DG) and cylindrical nanowire (CNW) FETs at their extreme miniaturiza-tion limits. The model fully accounts for quantum electrostatics; cur-rent transport is simulated by an improved density-gradient approach supported by a new thickness-dependent mobility model which nicely fits available measurements for both SiO2 and HfO2 gate di-electrics. The performance comparison between SiO2 and HfO2 FETs with the same EOT demonstrates that the latter provides an improved on-current due to lateral capacitive effects despite the low-field mobility degradation.
Effects of high-κ (HfO) gate dielectric in double-gate and cylindrical-nanowire MOSFETs scaled to the ultimate technology nodes / E. Gnani; S. Reggiani; M. Rudan; G. Baccarani. - STAMPA. - 11:(2006), pp. 121-122. (Intervento presentato al convegno IEEE 2006 Silicon Nanoelectronics Workshop tenutosi a Honolulu, Hawaii nel 11-12 June 2006).
Effects of high-κ (HfO) gate dielectric in double-gate and cylindrical-nanowire MOSFETs scaled to the ultimate technology nodes
GNANI, ELENA;REGGIANI, SUSANNA;RUDAN, MASSIMO;BACCARANI, GIORGIO
2006
Abstract
In this work we investigate the performance of double-gate (DG) and cylindrical nanowire (CNW) FETs at their extreme miniaturiza-tion limits. The model fully accounts for quantum electrostatics; cur-rent transport is simulated by an improved density-gradient approach supported by a new thickness-dependent mobility model which nicely fits available measurements for both SiO2 and HfO2 gate di-electrics. The performance comparison between SiO2 and HfO2 FETs with the same EOT demonstrates that the latter provides an improved on-current due to lateral capacitive effects despite the low-field mobility degradation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
