The impact-ionization coefficient a_n at high fields is derived in terms of the electric fields E and lattice temperature T, without introducing a priori relations among the parameters. An asymptotic analysis leads to simplifications that validate closed-form expressions of a_n. The role of the relaxation times in determining the slope of a_n(E) is discussed, along with the meaning of the critical field.
M. Rudan, R. Katilius, S. Reggiani, E. Gnani, G. Baccarani (2008). Impact-ionization coefficient in silicon at high fields: – A parametric approach. JOURNAL OF COMPUTATIONAL ELECTRONICS, 7, 151-154 [10.1007/s10825-008-0184-8].
Impact-ionization coefficient in silicon at high fields: – A parametric approach
RUDAN, MASSIMO;REGGIANI, SUSANNA;GNANI, ELENA;BACCARANI, GIORGIO
2008
Abstract
The impact-ionization coefficient a_n at high fields is derived in terms of the electric fields E and lattice temperature T, without introducing a priori relations among the parameters. An asymptotic analysis leads to simplifications that validate closed-form expressions of a_n. The role of the relaxation times in determining the slope of a_n(E) is discussed, along with the meaning of the critical field.File in questo prodotto:
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