In this work we address the problem of field- and temperature-dependence of the impact-ionization coefficient in silicon. A careful prediction of the impact ionization phenomenon is essential for the design of devices working in high-current/voltage conditions, where self heating is relevant. A new model is proposed, fitted on first-principle calculations, that demonstrates the essential role played by the non-equilibrium Auger effect, which is neglected in standard approaches. The model is corroborated by a theoretical analysis, that confirms the numerical findings about the field and temperature dependence.

Investigation about the high temperature impact-ionization coefficient in silicon

REGGIANI, SUSANNA;RUDAN, MASSIMO;GNANI, ELENA;BACCARANI, GIORGIO
2004

Abstract

In this work we address the problem of field- and temperature-dependence of the impact-ionization coefficient in silicon. A careful prediction of the impact ionization phenomenon is essential for the design of devices working in high-current/voltage conditions, where self heating is relevant. A new model is proposed, fitted on first-principle calculations, that demonstrates the essential role played by the non-equilibrium Auger effect, which is neglected in standard approaches. The model is corroborated by a theoretical analysis, that confirms the numerical findings about the field and temperature dependence.
Proceedings of the 34th European Solid-State Device Research Conference
245
248
S. REGGIANI; M. RUDAN; E. GNANI; G. BACCARANI
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/3537
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