In this work we investigate and compare the electrostatics of carbon-nanotube field-effect transistor (CNT-FET) arrays. To this purpose, we have developed a self-consistent Schroedinger-Poisson solver which fully takes into account quantum effects and the CNTs physical properties. We show that quantum effects have to be carefully taken into account in order to properly catch the electrostatic behavior of these devices. A further analysis is carried out in order to quantify the screening effects that arise when an array of nanotubes in parallel is used, showing that such effects play a fundamental role in the electrostatic performance of CNT-FET arrays.
A Schroedinger-Poisson Solution of CNT-FET Arrays / A. Marchi; S. Reggiani; M. Rudan. - STAMPA. - (2005), pp. 83-86. (Intervento presentato al convegno International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2005) tenutosi a Tokyo, Japan nel 1-3 Settembre 2005).
A Schroedinger-Poisson Solution of CNT-FET Arrays
MARCHI, ALEX;REGGIANI, SUSANNA;RUDAN, MASSIMO
2005
Abstract
In this work we investigate and compare the electrostatics of carbon-nanotube field-effect transistor (CNT-FET) arrays. To this purpose, we have developed a self-consistent Schroedinger-Poisson solver which fully takes into account quantum effects and the CNTs physical properties. We show that quantum effects have to be carefully taken into account in order to properly catch the electrostatic behavior of these devices. A further analysis is carried out in order to quantify the screening effects that arise when an array of nanotubes in parallel is used, showing that such effects play a fundamental role in the electrostatic performance of CNT-FET arrays.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
