A method for directly measuring the inverse screening length in semiconductors in terms of ionized-impurity concentration and lattice temperature is demonstrated, based on a first-principle calculation of the effect of ionized-impurity scattering. No fitting parameters are involved in the derivation, which covers a wide range of doping concentrations and intrinsically complies with the Mathiessen rule. A new class of integrals is introduced in the calculation. The results are compared with the standard derivation of the inverse screening length from the perturbative solution of the Poisson equation.

A Method for Determining the Screening Length of the Coulombic Scattering in Non-Degenerate and Degenerate Semiconductors

RUDAN, MASSIMO;PERRONI, GIANCARLO
2004

Abstract

A method for directly measuring the inverse screening length in semiconductors in terms of ionized-impurity concentration and lattice temperature is demonstrated, based on a first-principle calculation of the effect of ionized-impurity scattering. No fitting parameters are involved in the derivation, which covers a wide range of doping concentrations and intrinsically complies with the Mathiessen rule. A new class of integrals is introduced in the calculation. The results are compared with the standard derivation of the inverse screening length from the perturbative solution of the Poisson equation.
Simulation of Semiconductor Processes and Devices (SISPAD 2004)
121
124
M. Rudan; G. Perroni
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/14112
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