Charge transport in amorphous chalcogenide-GST used for memory devices is modeled by means of two contributions: hopping of trapped electrons and motion of band electrons. Field-induced emission is accounted for as the mechanism mainly responsible for the trap-to-band transitions. The experimental snap-back behavior of the I(V) curves is reproduced even in the simple case of one-dimensional, uniform structures as the one considered in the paper.
Modeling of the voltage snap-back in amorphous-GST memory devices
RUDAN, MASSIMO;GIOVANARDI, FABIO;TSAFACK TSOPBENG, THIERRY BIENVENU;PICCININI, ENRICO;BUSCEMI, FABRIZIO;
2010
Abstract
Charge transport in amorphous chalcogenide-GST used for memory devices is modeled by means of two contributions: hopping of trapped electrons and motion of band electrons. Field-induced emission is accounted for as the mechanism mainly responsible for the trap-to-band transitions. The experimental snap-back behavior of the I(V) curves is reproduced even in the simple case of one-dimensional, uniform structures as the one considered in the paper.File in questo prodotto:
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