Charge transport in amorphous chalcogenide-GST used for memory devices is modeled by means of two contributions: hopping of trapped electrons and motion of band electrons. Field-induced emission is accounted for as the mechanism mainly responsible for the trap-to-band transitions. The experimental snap-back behavior of the I(V) curves is reproduced even in the simple case of one-dimensional, uniform structures as the one considered in the paper.
M. Rudan, F. Giovanardi, T. Tsafack, F. Xiong, E. Piccinini, F. Buscemi, et al. (2010). Modeling of the voltage snap-back in amorphous-GST memory devices. NEW YORK : IEEE [10.1109/SISPAD.2010.5604511].
Modeling of the voltage snap-back in amorphous-GST memory devices
RUDAN, MASSIMO;GIOVANARDI, FABIO;TSAFACK TSOPBENG, THIERRY BIENVENU;PICCININI, ENRICO;BUSCEMI, FABRIZIO;
2010
Abstract
Charge transport in amorphous chalcogenide-GST used for memory devices is modeled by means of two contributions: hopping of trapped electrons and motion of band electrons. Field-induced emission is accounted for as the mechanism mainly responsible for the trap-to-band transitions. The experimental snap-back behavior of the I(V) curves is reproduced even in the simple case of one-dimensional, uniform structures as the one considered in the paper.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
