SISPAD provides an international forum for presentation of the leading-edge research and development results in the area of process and device simulation. SISPAD is held annually, with the location of the conference circulating among Asia, Europe, and the U.S., and is one of the longest running conferences devoted to technology computer-aided design (TCAD). This year, the 15th SISPAD has been organized by the ARCES Research Center of the University of Bologna, Italy, with the technical co-sponsorship of the IEEE Electron Devices Society (EDS). The main themes of interest for SISPAD 2010 are: i) Electronic transport in semiconductor materials and devices, ii) Device modeling and simulation, iii) Sensors, biosensors, and (bio)-electromechanical systems simulation, iv) Process and equipment modeling and simulation, v) Compact models, vi) Physical-level circuit simulation, vii) New algorithms for process and device modeling. This year, the conference program features 6 invited papers and 62 oral presentations which were carefully selected out of a total of 116 abstracts submitted from all over the world. These papers disclose new and interesting concepts for the simulation and understanding of processes and devices. Also, two workshops are being organized on Thursday 9 September, 2010 on the simulation and characterization of statistical CMOS variability and reliability, and on steep slope switches. Both contributed and invited papers in this volume are 4-page manuscripts.

15th International Conference on Simulation of Semiconductor Processes and Devices

BACCARANI, GIORGIO;RUDAN, MASSIMO
2010

Abstract

SISPAD provides an international forum for presentation of the leading-edge research and development results in the area of process and device simulation. SISPAD is held annually, with the location of the conference circulating among Asia, Europe, and the U.S., and is one of the longest running conferences devoted to technology computer-aided design (TCAD). This year, the 15th SISPAD has been organized by the ARCES Research Center of the University of Bologna, Italy, with the technical co-sponsorship of the IEEE Electron Devices Society (EDS). The main themes of interest for SISPAD 2010 are: i) Electronic transport in semiconductor materials and devices, ii) Device modeling and simulation, iii) Sensors, biosensors, and (bio)-electromechanical systems simulation, iv) Process and equipment modeling and simulation, v) Compact models, vi) Physical-level circuit simulation, vii) New algorithms for process and device modeling. This year, the conference program features 6 invited papers and 62 oral presentations which were carefully selected out of a total of 116 abstracts submitted from all over the world. These papers disclose new and interesting concepts for the simulation and understanding of processes and devices. Also, two workshops are being organized on Thursday 9 September, 2010 on the simulation and characterization of statistical CMOS variability and reliability, and on steep slope switches. Both contributed and invited papers in this volume are 4-page manuscripts.
324
9781424476992
G. Baccarani; M. Rudan
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/125107
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