CRIS Current Research Information System

FIEGNA, CLAUDIO
 Distribuzione geografica
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Continente #
NA - Nord America 15.455
AS - Asia 8.375
EU - Europa 6.099
SA - Sud America 461
AF - Africa 422
Continente sconosciuto - Info sul continente non disponibili 362
OC - Oceania 5
Totale 31.179
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Nazione #
US - Stati Uniti d'America 15.319
CN - Cina 2.356
SG - Singapore 2.175
VN - Vietnam 2.087
GB - Regno Unito 1.532
IT - Italia 1.133
DE - Germania 778
HK - Hong Kong 481
RU - Federazione Russa 435
FR - Francia 421
UA - Ucraina 417
IN - India 403
SE - Svezia 399
IE - Irlanda 338
BR - Brasile 321
JP - Giappone 193
KR - Corea 184
CI - Costa d'Avorio 158
ZA - Sudafrica 138
EE - Estonia 115
FI - Finlandia 112
NL - Olanda 98
BG - Bulgaria 80
TW - Taiwan 79
CA - Canada 71
BD - Bangladesh 64
PK - Pakistan 62
AR - Argentina 61
SC - Seychelles 56
PH - Filippine 49
BE - Belgio 43
JO - Giordania 39
CH - Svizzera 37
ID - Indonesia 35
TR - Turchia 35
TH - Thailandia 32
AT - Austria 27
GR - Grecia 24
IQ - Iraq 23
PL - Polonia 23
TG - Togo 23
ES - Italia 22
EC - Ecuador 21
CO - Colombia 20
MX - Messico 18
MY - Malesia 18
CL - Cile 17
SA - Arabia Saudita 14
CZ - Repubblica Ceca 13
HR - Croazia 10
JM - Giamaica 10
LB - Libano 9
LT - Lituania 9
UZ - Uzbekistan 9
CR - Costa Rica 8
ET - Etiopia 8
PY - Paraguay 6
VE - Venezuela 6
AL - Albania 5
AU - Australia 5
DO - Repubblica Dominicana 5
EG - Egitto 5
HN - Honduras 5
KZ - Kazakistan 5
NG - Nigeria 5
NP - Nepal 5
RO - Romania 5
TT - Trinidad e Tobago 5
AE - Emirati Arabi Uniti 4
DZ - Algeria 4
GT - Guatemala 4
KE - Kenya 4
PE - Perù 4
PT - Portogallo 4
TN - Tunisia 4
AO - Angola 3
AZ - Azerbaigian 3
MD - Moldavia 3
PA - Panama 3
SI - Slovenia 3
SK - Slovacchia (Repubblica Slovacca) 3
UY - Uruguay 3
BB - Barbados 2
BW - Botswana 2
GP - Guadalupe 2
IR - Iran 2
KG - Kirghizistan 2
LU - Lussemburgo 2
LV - Lettonia 2
LY - Libia 2
SN - Senegal 2
SY - Repubblica araba siriana 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BA - Bosnia-Erzegovina 1
BH - Bahrain 1
BO - Bolivia 1
BY - Bielorussia 1
BZ - Belize 1
CG - Congo 1
CV - Capo Verde 1
Totale 30.801
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Città #
Ann Arbor 5.346
Singapore 1.470
Southend 1.300
Fairfield 1.072
Ashburn 828
Wilmington 632
Santa Clara 621
Chandler 553
Woodbridge 529
San Jose 484
Seattle 473
Hong Kong 448
Houston 419
Ho Chi Minh City 409
Dong Ket 399
Cambridge 391
Hefei 362
Dublin 338
Princeton 331
Hanoi 316
Beijing 305
Jacksonville 290
Bologna 246
Council Bluffs 230
Boardman 218
Nanjing 188
Lauterbourg 165
Abidjan 158
Tokyo 156
Redmond 155
Padova 151
New York 147
Westminster 145
Seoul 144
Los Angeles 112
Berlin 108
Turin 88
Leesburg 87
Milan 83
Medford 80
Sofia 80
Buffalo 79
Frankfurt am Main 78
Cesena 77
Saint Petersburg 76
Jinan 72
Dallas 70
Haiphong 67
Shenyang 62
Guangzhou 59
Mülheim 58
San Diego 58
Changsha 54
Redondo Beach 53
Helsinki 49
Dearborn 48
Tianjin 48
Nanchang 47
Hebei 45
Lappeenranta 43
Da Nang 42
Shanghai 42
Bengaluru 41
The Dalles 40
Amman 39
Rimini 36
Brussels 34
Falls Church 34
London 34
Zhengzhou 34
Mahé 33
Norwalk 33
Rahim Yar Khan 31
Hangzhou 30
Chicago 29
Phoenix 27
São Paulo 26
Munich 25
Hsinchu 24
Jiaxing 24
Lomé 23
Nuremberg 23
Redwood City 23
Amsterdam 22
Hyderabad 22
Naples 22
Des Moines 21
Orem 21
Verona 21
Olalla 20
Yubileyny 20
Bern 19
Brooklyn 19
Eindhoven 19
Haikou 19
Toronto 19
Turku 18
Kunming 17
Lanzhou 17
Bangkok 16
Totale 22.259
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Nome #
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation 327
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors 314
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs 308
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide 296
TCAD investigation on hot-electron injection in new-generation technologies 288
Analysis of the impact of geometrical and technological parameters on recombination losses in interdigitated back-contact solar cells 287
Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation 283
Analysis of Silicon Solar Cells With Poly-Si/SiOx Carrier-Selective Base and Emitter Contacts 279
A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter 274
Characterization and Modeling of BTI in SiC MOSFETs 273
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 262
Development of an analytical mobility model for the simulation of ultra-thin single- and double-gate SOI MOSFETs 257
A Methodology to Account for the Finger Non-Uniformity in Photovoltaic Solar Cell 246
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture 246
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors 241
Computational efficient RCWA method for simulation of thin film solar cells 237
Analysis of the EWT-DGB solar cell at low and medium concentration and comparison with a PESC architecture 237
Gate Reliability of p-GaN HEMT with Gate Metal Retraction 230
AC and DC numerical simulation of Self–Heating Effects in FinFETs 226
Analysis of Scaling Strategies for Sub-30 nm Double-Gate SOI N-MOSFETs 224
Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation 224
Positive Bias Temperature Instability in SiC-Based Power MOSFETs 223
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current 221
Advanced electro-optical simulation of nanowire-based solar cells 221
Advanced protective coatings for reflectivity enhancement by low temperature atomic layer deposition of HfO2on Al surfaces for micromirror applications 221
Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap: A Monte Carlo study 220
2-D numerical simulation and modeling of monocrystalline selective emitter solar cells 218
Quasiballistic Transport in Nano-MOSFETs 217
Comparison of Advanced Transport Models for Nanoscale nMOSFETs 217
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs 215
An improved semiclassical Monte-Carlo appproach for nano-scale MOSFET simulation 213
2-D Numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance 209
Numerical simulation and modeling of rear point contact solar cells 208
Scaling the High-Performance Double-Gate SOI MOSFET down to the 32 nm Technology Node with SiO2-based Gate Stacks 207
Small-signal Analysis of deca-nanometer bulk and SOI MOSFETs for Analog/Mixed-signal and RF applications using the Time-Dependent Monte Carlo Approach 206
Brownian dynamics simulation of ion channels embedded in silicon membranes for sensor applications 206
An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation 206
A Monte-Carlo study of the role of scattering in deca-nanometer MOSFETs 206
Analysis of double-gate MOS structures by solving Poisson and Schroedinger equations with open boundaries 205
Application of a computationally efficient implementation of the RCWA method to numerical simulations of thin film amorphous solar cells 205
Ballistic effects in advanced MOSFETs along the Roadmap 204
Analysis of Ballistic Transport in MOSFETs along the ITRS Roadmap 204
Experimental technique for the performance evaluation and optimization of 1/f noise spectrum investigation in electron devices 204
P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime 202
A novel Brownian-Dynamics Algorithm for the Simulation of Ion Conduction Through Membrane Pores 202
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs 201
Characterization and Modeling of Hot Carrier-Induced Variability in Subthreshold Region 201
Analysis of the Impact of Doping Levels on Performance of back Contact-Back Junction Solar Cells 200
Understandig Quasi-Ballistics Trasport in Nano-MOSFETS: Part I Scattering in the Channel and in the Drain 199
Understandig quasi-ballistics trasport in nano-MOSFETS: Part II Technology scaling along the ITRS 199
Noise Reduction in CMOS Circuits Through Switched Gate and Forward Substrate Bias 199
Fabrication, characterization and modeling of a silicon solar cell optimized for concentrated photovoltaic applications 199
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition 198
A Distributed Electrical Network to Model the Local Shunting in Multicrystalline Silicon Solar Cells 198
Analysis of Silicon Dioxide Interface Transition Region in MOS Structures 197
Particle-based Simulation of Conductance of Solid State Nanopores and Ion Channels 197
Optimization of Rear Point Contact Geometry by Means of 3-D Numerical Simulation 197
A Comparative Study of MWT Architectures by Means of Numerical Simulations 197
Loss analysis of silicon solar cells by means of numerical device simulation 197
Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-Signal and RF applications 196
Effect of shunt resistance on the performance of mc-Silicon solar cells: a combined electro-optical and thermal investigation 196
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 196
Performance Analysis of Rear Point Contact Solar Cells by Three-Dimensional Numerical Simulation 196
Analysis of strained-silicon-on-insulator double-gate MOS structures 195
Simulation of micro-mirrors for optical MEMS 195
Comparison of three-dimensional Poisson solution methods for particle-based simulation and inhomogeneous dielectrics 195
Stability of self-consistent Monte Carlo Simulations: effects of the grid size and of the coupling scheme 194
Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks 194
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 194
Drain current computation in nanoscale nMOSFETs: Comparison of transport models 194
Theoretical study of the impact of rear interface passivation on MWT silicon solar cells 194
Two- and Three-Dimensional Numerical Simulation of Advanced Silicon Solar Cells 193
ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence 193
TCAD predictions of hot-electron injection in p-type LDMOS transistors 193
Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode 191
Impact of Hot Carriers on nMOSFET Variability in 45- and 65-nm CMOS Technologies 191
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate 190
A Distributed Electrical Model for Interdigitated back Contact Silicon Solar Cells 190
Analysis of two alternative scaling strategies for sub-30 nm Double-Gate SOI MOSFETs 188
Computationally efficient method for optical simulation of solar cells and their applications 188
Understanding the Impact of the Doping Profiles on Selective Emitter Solar Cell by Two-Dimensional Numerical Simulation 188
Failure mode for p-GaN gates under forward gate stress with varying Mg concentration 188
Monte-Carlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections 187
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs 187
Evaluation of ultra-thin double gate MOSFET for the 45 nm technology node 186
Understanding the Influence of Busbars in Large-Area IBC Solar Cells by Distributed SPICE Simulations 186
Optical simulation of ZnO/CdTe and c-Si/a-Si vertical nanowires solar cells 186
Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections 185
Brownian Dynamics Study of Current and Selectivity of Calcium Channels 185
Understanding the impact of double screen-printing on silicon solar cells by 2-D numerical simulations 185
Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate 184
Numerical Simulation and Modeling of Resistive and Recombination Losses in MWT Solar Cells 183
Fabrication, simulation and experimental characterization of EWT solar cells with Deep Grooved Base contact 183
ULIS 2005 182
Open issues for the numerical simulation of silicon solar cells 182
Negative Bias Temperature Stress Reliability in Trench-Gated P-Channel Power MOSFETs 182
Simulation of Self-Heating Effects in Different SOI MOS Architectures 182
Simulation Study of Multi-wire front Contact Grids for Silicon Solar Cells 181
The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs 180
Computational Efficient Solution of Maxwell's Equations for Lamellar Gratings 180
Totale 21.136
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Categoria #
all - tutte 81.143
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 81.143
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20227.308 0 109 1.052 828 999 772 898 758 850 216 366 460
2022/20232.608 278 271 122 340 159 212 66 125 570 41 274 150
2023/2024972 59 173 88 72 93 220 44 44 25 92 25 37
2024/20253.402 204 542 261 303 797 124 279 78 52 111 152 499
2025/20267.424 405 699 829 520 929 424 685 252 1.686 494 226 275
2026/2027520 214 306 0 0 0 0 0 0 0 0 0 0
Totale 31.179