CRIS Current Research Information System

FIEGNA, CLAUDIO
 Distribuzione geografica
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Continente #
NA - Nord America 14.878
AS - Asia 8.296
EU - Europa 5.989
SA - Sud America 449
AF - Africa 420
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 1
Totale 30.038
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Nazione #
US - Stati Uniti d'America 14.810
CN - Cina 2.345
SG - Singapore 2.157
VN - Vietnam 2.119
GB - Regno Unito 1.541
IT - Italia 1.032
DE - Germania 781
HK - Hong Kong 454
RU - Federazione Russa 437
UA - Ucraina 419
FR - Francia 414
IN - India 391
SE - Svezia 381
IE - Irlanda 342
BR - Brasile 320
JP - Giappone 192
KR - Corea 180
CI - Costa d'Avorio 160
ZA - Sudafrica 139
EE - Estonia 116
FI - Finlandia 114
NL - Olanda 93
BG - Bulgaria 82
TW - Taiwan 74
PK - Pakistan 62
AR - Argentina 57
PH - Filippine 50
SC - Seychelles 50
BE - Belgio 45
CA - Canada 41
JO - Giordania 39
CH - Svizzera 36
ID - Indonesia 35
TH - Thailandia 33
TR - Turchia 33
BD - Bangladesh 29
AT - Austria 28
GR - Grecia 24
IQ - Iraq 23
TG - Togo 23
ES - Italia 20
PL - Polonia 20
EC - Ecuador 19
MY - Malesia 18
CL - Cile 17
CO - Colombia 16
SA - Arabia Saudita 15
MX - Messico 14
CZ - Repubblica Ceca 13
HR - Croazia 10
LB - Libano 9
UZ - Uzbekistan 9
ET - Etiopia 8
LT - Lituania 8
PY - Paraguay 6
VE - Venezuela 6
AL - Albania 5
AU - Australia 5
DO - Repubblica Dominicana 5
EG - Egitto 5
KZ - Kazakistan 5
NG - Nigeria 5
NP - Nepal 5
RO - Romania 5
AE - Emirati Arabi Uniti 4
AO - Angola 4
DZ - Algeria 4
KE - Kenya 4
PT - Portogallo 4
TN - Tunisia 4
AZ - Azerbaigian 3
KG - Kirghizistan 3
MD - Moldavia 3
PA - Panama 3
PE - Perù 3
SI - Slovenia 3
SK - Slovacchia (Repubblica Slovacca) 3
UY - Uruguay 3
BW - Botswana 2
IR - Iran 2
LU - Lussemburgo 2
LV - Lettonia 2
LY - Libia 2
SN - Senegal 2
SY - Repubblica araba siriana 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BA - Bosnia-Erzegovina 1
BH - Bahrain 1
BO - Bolivia 1
BY - Bielorussia 1
BZ - Belize 1
CG - Congo 1
CR - Costa Rica 1
CV - Capo Verde 1
DK - Danimarca 1
GA - Gabon 1
GT - Guatemala 1
HN - Honduras 1
HU - Ungheria 1
IL - Israele 1
Totale 30.026
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Città #
Ann Arbor 5.419
Singapore 1.449
Southend 1.318
Fairfield 1.076
Ashburn 802
Wilmington 642
Santa Clara 603
Chandler 559
Woodbridge 533
Seattle 473
San Jose 431
Hong Kong 427
Houston 422
Dong Ket 413
Ho Chi Minh City 413
Cambridge 392
Hefei 362
Dublin 342
Princeton 337
Hanoi 323
Beijing 293
Jacksonville 289
Bologna 235
Boardman 207
Nanjing 189
Lauterbourg 167
Abidjan 160
Tokyo 157
Redmond 155
Padova 153
Westminster 147
Seoul 144
New York 130
Berlin 109
Los Angeles 101
Turin 90
Leesburg 87
Sofia 82
Medford 81
Saint Petersburg 78
Buffalo 77
Cesena 77
Frankfurt am Main 76
Jinan 73
Haiphong 67
Milan 66
Shenyang 63
Guangzhou 60
Dallas 59
Mülheim 59
San Diego 57
Changsha 55
Redondo Beach 54
Helsinki 50
Dearborn 49
Nanchang 48
Tianjin 48
Hebei 45
Lappeenranta 44
Da Nang 42
Shanghai 41
The Dalles 40
Amman 39
Brussels 36
Zhengzhou 35
Falls Church 34
London 34
Mahé 33
Norwalk 33
Rahim Yar Khan 31
Hangzhou 29
Bengaluru 28
Council Bluffs 28
Chicago 26
São Paulo 26
Hsinchu 24
Jiaxing 24
Lomé 23
Munich 23
Nuremberg 23
Redwood City 23
Hyderabad 22
Des Moines 21
Verona 21
Olalla 20
Yubileyny 20
Amsterdam 19
Bern 19
Eindhoven 19
Haikou 19
Orem 19
Kunming 18
Lanzhou 18
Turku 18
Biên Hòa 16
Forlì 16
Fremont 16
Genova 16
Nha Trang 16
Taiyuan 16
Totale 21.941
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Nome #
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation 320
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs 300
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide 283
Analysis of the impact of geometrical and technological parameters on recombination losses in interdigitated back-contact solar cells 281
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors 278
TCAD investigation on hot-electron injection in new-generation technologies 274
Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation 273
Analysis of Silicon Solar Cells With Poly-Si/SiOx Carrier-Selective Base and Emitter Contacts 272
Characterization and Modeling of BTI in SiC MOSFETs 270
Development of an analytical mobility model for the simulation of ultra-thin single- and double-gate SOI MOSFETs 254
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 252
A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter 248
A Methodology to Account for the Finger Non-Uniformity in Photovoltaic Solar Cell 245
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture 243
Analysis of the EWT-DGB solar cell at low and medium concentration and comparison with a PESC architecture 233
Computational efficient RCWA method for simulation of thin film solar cells 232
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors 231
Gate Reliability of p-GaN HEMT with Gate Metal Retraction 225
AC and DC numerical simulation of Self–Heating Effects in FinFETs 221
Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation 219
Advanced electro-optical simulation of nanowire-based solar cells 217
Advanced protective coatings for reflectivity enhancement by low temperature atomic layer deposition of HfO2on Al surfaces for micromirror applications 217
Analysis of Scaling Strategies for Sub-30 nm Double-Gate SOI N-MOSFETs 216
Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap: A Monte Carlo study 215
2-D numerical simulation and modeling of monocrystalline selective emitter solar cells 215
Positive Bias Temperature Instability in SiC-Based Power MOSFETs 213
An improved semiclassical Monte-Carlo appproach for nano-scale MOSFET simulation 210
Comparison of Advanced Transport Models for Nanoscale nMOSFETs 207
2-D Numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance 207
Application of a computationally efficient implementation of the RCWA method to numerical simulations of thin film amorphous solar cells 205
Analysis of double-gate MOS structures by solving Poisson and Schroedinger equations with open boundaries 204
Numerical simulation and modeling of rear point contact solar cells 204
A Monte-Carlo study of the role of scattering in deca-nanometer MOSFETs 203
An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation 202
Small-signal Analysis of deca-nanometer bulk and SOI MOSFETs for Analog/Mixed-signal and RF applications using the Time-Dependent Monte Carlo Approach 200
Brownian dynamics simulation of ion channels embedded in silicon membranes for sensor applications 200
Scaling the High-Performance Double-Gate SOI MOSFET down to the 32 nm Technology Node with SiO2-based Gate Stacks 198
Ballistic effects in advanced MOSFETs along the Roadmap 197
A Distributed Electrical Network to Model the Local Shunting in Multicrystalline Silicon Solar Cells 197
Characterization and Modeling of Hot Carrier-Induced Variability in Subthreshold Region 197
A novel Brownian-Dynamics Algorithm for the Simulation of Ion Conduction Through Membrane Pores 197
Analysis of Ballistic Transport in MOSFETs along the ITRS Roadmap 196
Analysis of the Impact of Doping Levels on Performance of back Contact-Back Junction Solar Cells 196
A Comparative Study of MWT Architectures by Means of Numerical Simulations 195
Understandig Quasi-Ballistics Trasport in Nano-MOSFETS: Part I Scattering in the Channel and in the Drain 194
Noise Reduction in CMOS Circuits Through Switched Gate and Forward Substrate Bias 194
Effect of shunt resistance on the performance of mc-Silicon solar cells: a combined electro-optical and thermal investigation 193
Fabrication, characterization and modeling of a silicon solar cell optimized for concentrated photovoltaic applications 193
Optimization of Rear Point Contact Geometry by Means of 3-D Numerical Simulation 193
Experimental technique for the performance evaluation and optimization of 1/f noise spectrum investigation in electron devices 193
Performance Analysis of Rear Point Contact Solar Cells by Three-Dimensional Numerical Simulation 193
Understandig quasi-ballistics trasport in nano-MOSFETS: Part II Technology scaling along the ITRS 192
Quasiballistic Transport in Nano-MOSFETs 192
Simulation of micro-mirrors for optical MEMS 192
Analysis of strained-silicon-on-insulator double-gate MOS structures 191
Two- and Three-Dimensional Numerical Simulation of Advanced Silicon Solar Cells 191
Theoretical study of the impact of rear interface passivation on MWT silicon solar cells 191
Loss analysis of silicon solar cells by means of numerical device simulation 191
Drain current computation in nanoscale nMOSFETs: Comparison of transport models 190
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs 190
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs 189
Analysis of Silicon Dioxide Interface Transition Region in MOS Structures 189
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 188
A Distributed Electrical Model for Interdigitated back Contact Silicon Solar Cells 188
ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence 188
Stability of self-consistent Monte Carlo Simulations: effects of the grid size and of the coupling scheme 187
Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks 187
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 187
TCAD predictions of hot-electron injection in p-type LDMOS transistors 187
Impact of Hot Carriers on nMOSFET Variability in 45- and 65-nm CMOS Technologies 187
Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-Signal and RF applications 185
Particle-based Simulation of Conductance of Solid State Nanopores and Ion Channels 185
Comparison of three-dimensional Poisson solution methods for particle-based simulation and inhomogeneous dielectrics 185
Computationally efficient method for optical simulation of solar cells and their applications 184
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current 183
Understanding the Impact of the Doping Profiles on Selective Emitter Solar Cell by Two-Dimensional Numerical Simulation 183
Understanding the impact of double screen-printing on silicon solar cells by 2-D numerical simulations 183
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition 182
Monte-Carlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections 182
Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode 182
Failure mode for p-GaN gates under forward gate stress with varying Mg concentration 182
Evaluation of ultra-thin double gate MOSFET for the 45 nm technology node 181
Analysis of two alternative scaling strategies for sub-30 nm Double-Gate SOI MOSFETs 181
Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections 181
Brownian Dynamics Study of Current and Selectivity of Calcium Channels 181
Numerical Simulation and Modeling of Resistive and Recombination Losses in MWT Solar Cells 181
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs 181
Fabrication, simulation and experimental characterization of EWT solar cells with Deep Grooved Base contact 180
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate 179
Open issues for the numerical simulation of silicon solar cells 179
Simulation of Self-Heating Effects in Different SOI MOS Architectures 179
P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime 178
Three-Dimensional Brownian Dynamics Simulator for the Study of Ion Permeation through Membrane Pores 178
Numerical simulation of the impact of design parameters on the performance of back-contact back-junction solar cell 178
Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate 178
Optical simulation of ZnO/CdTe and c-Si/a-Si vertical nanowires solar cells 178
The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs 177
Understanding the Influence of Busbars in Large-Area IBC Solar Cells by Distributed SPICE Simulations 177
Computational Efficient Solution of Maxwell's Equations for Lamellar Gratings 176
Local Shunting in Multicrystalline Silicon Solar Cells: Distributed Electrical Simulations and Experiments 176
Totale 20.427
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Categoria #
all - tutte 74.842
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 74.842
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.080 0 0 0 0 0 0 0 0 0 175 159 746
2021/20227.771 373 110 1.063 838 1.011 782 909 768 860 219 373 465
2022/20232.640 284 274 123 345 161 214 66 126 576 43 278 150
2023/2024984 61 174 88 74 93 224 45 44 25 92 27 37
2024/20253.431 206 547 262 304 809 127 280 78 52 111 152 503
2025/20266.918 408 702 834 523 940 428 693 259 1.711 420 0 0
Totale 30.401