CRIS Current Research Information System

FIEGNA, CLAUDIO
 Distribuzione geografica
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Continente #
NA - Nord America 12.545
EU - Europa 4.919
AS - Asia 1.947
AF - Africa 325
SA - Sud America 11
OC - Oceania 4
Continente sconosciuto - Info sul continente non disponibili 1
Totale 19.752
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Nazione #
US - Stati Uniti d'America 12.523
GB - Regno Unito 1.502
IT - Italia 794
CN - Cina 782
VN - Vietnam 683
DE - Germania 655
UA - Ucraina 409
SE - Svezia 374
IE - Irlanda 342
IN - India 286
FR - Francia 216
RU - Federazione Russa 207
CI - Costa d'Avorio 134
ZA - Sudafrica 129
EE - Estonia 116
BG - Bulgaria 82
FI - Finlandia 60
TW - Taiwan 40
BE - Belgio 39
JO - Giordania 36
PK - Pakistan 35
SC - Seychelles 33
CH - Svizzera 30
JP - Giappone 28
TG - Togo 22
CA - Canada 21
NL - Olanda 20
GR - Grecia 19
HK - Hong Kong 13
SG - Singapore 11
AT - Austria 10
HR - Croazia 9
CZ - Repubblica Ceca 8
LB - Libano 8
TR - Turchia 8
KR - Corea 6
PL - Polonia 6
BR - Brasile 5
CL - Cile 5
ES - Italia 5
NG - Nigeria 5
AU - Australia 4
RO - Romania 4
SI - Slovenia 3
SK - Slovacchia (Repubblica Slovacca) 3
UZ - Uzbekistan 3
IR - Iran 2
PT - Portogallo 2
SA - Arabia Saudita 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AE - Emirati Arabi Uniti 1
EG - Egitto 1
HU - Ungheria 1
ID - Indonesia 1
KZ - Kazakistan 1
LV - Lettonia 1
MC - Monaco 1
MU - Mauritius 1
MX - Messico 1
PE - Perù 1
PH - Filippine 1
RS - Serbia 1
Totale 19.752
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Città #
Ann Arbor 5.419
Southend 1.318
Fairfield 1.076
Wilmington 641
Ashburn 613
Chandler 559
Woodbridge 533
Seattle 470
Houston 417
Dong Ket 413
Cambridge 392
Dublin 342
Princeton 337
Jacksonville 289
Nanjing 181
Bologna 163
Redmond 155
Padova 153
Westminster 147
Abidjan 134
Berlin 108
New York 96
Leesburg 87
Turin 83
Sofia 82
Medford 81
Saint Petersburg 78
Beijing 70
Jinan 67
Mülheim 59
Shenyang 58
San Diego 57
Dearborn 49
Cesena 48
Changsha 45
Hebei 45
Nanchang 44
Boardman 41
Tianjin 37
Amman 36
Lappeenranta 35
Falls Church 34
Mahé 33
Milan 33
Norwalk 33
Brussels 32
Rahim Yar Khan 31
Helsinki 25
Guangzhou 24
Jiaxing 24
Tokyo 24
Zhengzhou 24
Redwood City 23
Lomé 22
Hsinchu 21
Verona 21
Olalla 20
Bern 19
Des Moines 18
Haikou 18
London 18
Lanzhou 17
Fremont 16
Genova 16
Forlì 14
Hangzhou 14
Kunming 13
Ningbo 13
Taiyuan 13
Frankfurt am Main 12
Bühl 11
San Venanzo 11
Levanto 10
Washington 9
San Francisco 8
Taizhou 8
Toronto 8
Duncan 7
Formigine 7
Los Angeles 7
Paris 7
Phoenix 7
Victoria 7
Chang-hua 6
Florence 6
Fuzhou 6
Hefei 6
Nuvolera 6
Orange 6
Buffalo 5
Chicago 5
Ferrara 5
Frankfurt Am Main 5
Marseille 5
Munich 5
North Bergen 5
Singapore 5
Vallefoglia 5
Amsterdam 4
Den Haag 4
Totale 15.879
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Nome #
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide 215
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs 211
Analysis of Silicon Solar Cells With Poly-Si/SiOx Carrier-Selective Base and Emitter Contacts 205
TCAD investigation on hot-electron injection in new-generation technologies 202
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation 202
Analysis of the impact of geometrical and technological parameters on recombination losses in interdigitated back-contact solar cells 196
Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation 196
A Methodology to Account for the Finger Non-Uniformity in Photovoltaic Solar Cell 181
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 180
Development of an analytical mobility model for the simulation of ultra-thin single- and double-gate SOI MOSFETs 177
Characterization and Modeling of BTI in SiC MOSFETs 177
2-D numerical simulation and modeling of monocrystalline selective emitter solar cells 174
Advanced electro-optical simulation of nanowire-based solar cells 174
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture 173
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors 173
Analysis of the EWT-DGB solar cell at low and medium concentration and comparison with a PESC architecture 167
Computational efficient RCWA method for simulation of thin film solar cells 165
Gate Reliability of p-GaN HEMT with Gate Metal Retraction 163
Application of a computationally efficient implementation of the RCWA method to numerical simulations of thin film amorphous solar cells 162
Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation 160
Comparison of Advanced Transport Models for Nanoscale nMOSFETs 160
AC and DC numerical simulation of Self–Heating Effects in FinFETs 159
2-D Numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance 157
An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation 156
A Monte-Carlo study of the role of scattering in deca-nanometer MOSFETs 155
Analysis of Scaling Strategies for Sub-30 nm Double-Gate SOI N-MOSFETs 154
Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap: A Monte Carlo study 149
Numerical simulation and modeling of rear point contact solar cells 148
Drain current computation in nanoscale nMOSFETs: Comparison of transport models 147
Characterization and Modeling of Hot Carrier-Induced Variability in Subthreshold Region 147
null 147
Advanced protective coatings for reflectivity enhancement by low temperature atomic layer deposition of HfO2on Al surfaces for micromirror applications 147
A novel Brownian-Dynamics Algorithm for the Simulation of Ion Conduction Through Membrane Pores 145
Analysis of strained-silicon-on-insulator double-gate MOS structures 144
A Comparative Study of MWT Architectures by Means of Numerical Simulations 144
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors 144
Analysis of Silicon Dioxide Interface Transition Region in MOS Structures 141
Noise Reduction in CMOS Circuits Through Switched Gate and Forward Substrate Bias 141
Brownian dynamics simulation of ion channels embedded in silicon membranes for sensor applications 141
Impact of Hot Carriers on nMOSFET Variability in 45- and 65-nm CMOS Technologies 141
A Distributed Electrical Network to Model the Local Shunting in Multicrystalline Silicon Solar Cells 140
Computationally efficient method for optical simulation of solar cells and their applications 140
ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence 140
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 139
Small-signal Analysis of deca-nanometer bulk and SOI MOSFETs for Analog/Mixed-signal and RF applications using the Time-Dependent Monte Carlo Approach 138
A Distributed Electrical Model for Interdigitated back Contact Silicon Solar Cells 138
Open issues for the numerical simulation of silicon solar cells 137
Analysis of the Impact of Doping Levels on Performance of back Contact-Back Junction Solar Cells 137
An improved semiclassical Monte-Carlo appproach for nano-scale MOSFET simulation 136
Effect of shunt resistance on the performance of mc-Silicon solar cells: a combined electro-optical and thermal investigation 136
Optimization of Rear Point Contact Geometry by Means of 3-D Numerical Simulation 136
null 136
Failure mode for p-GaN gates under forward gate stress with varying Mg concentration 136
Understanding the impact of double screen-printing on silicon solar cells by 2-D numerical simulations 136
Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation 135
Simulation of micro-mirrors for optical MEMS 134
Understandig quasi-ballistics trasport in nano-MOSFETS: Part II Technology scaling along the ITRS 133
The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs 133
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs 133
Comparison of three-dimensional Poisson solution methods for particle-based simulation and inhomogeneous dielectrics 133
Quasiballistic Transport in Nano-MOSFETs 132
Two- and Three-Dimensional Numerical Simulation of Advanced Silicon Solar Cells 132
Analysis of double-gate MOS structures by solving Poisson and Schroedinger equations with open boundaries 131
Understandig Quasi-Ballistics Trasport in Nano-MOSFETS: Part I Scattering in the Channel and in the Drain 131
Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections 131
Performance Analysis of Rear Point Contact Solar Cells by Three-Dimensional Numerical Simulation 131
Analysis of Ballistic Transport in MOSFETs along the ITRS Roadmap 129
Stability of self-consistent Monte Carlo Simulations: effects of the grid size and of the coupling scheme 129
Particle-based Simulation of Conductance of Solid State Nanopores and Ion Channels 129
Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode 129
Brownian Dynamics Study of Current and Selectivity of Calcium Channels 128
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 128
Understanding the Influence of Busbars in Large-Area IBC Solar Cells by Distributed SPICE Simulations 127
Understanding the Impact of the Doping Profiles on Selective Emitter Solar Cell by Two-Dimensional Numerical Simulation 127
Simulation of Self-Heating Effects in Different SOI MOS Architectures 127
Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks 126
Modeling of thermal network in silicon power MOSFETs 126
Efficient Implementation of the Fourier Modal Method (RCWA) for the Optical Simulation of Optoelectronics Devices 126
Simulation of self-heating effects in different SOI MOS architectures 125
Numerical simulation and modeling of thermal transient in silicon power devices 125
Simulation Study of Multi-wire front Contact Grids for Silicon Solar Cells 125
Theoretical study of the impact of rear interface passivation on MWT silicon solar cells 125
Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-Signal and RF applications 124
Monte-Carlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections 124
Three-Dimensional Brownian Dynamics Simulator for the Study of Ion Permeation through Membrane Pores 124
TCAD predictions of hot-electron injection in p-type LDMOS transistors 124
Fabrication, characterization and modeling of a silicon solar cell optimized for concentrated photovoltaic applications 123
Local Shunting in Multicrystalline Silicon Solar Cells: Distributed Electrical Simulations and Experiments 122
Negative Bias Temperature Stress Reliability in Trench-Gated P-Channel Power MOSFETs 122
Experimental technique for the performance evaluation and optimization of 1/f noise spectrum investigation in electron devices 122
Reduced self-heating by strained silicon substrate engineering 121
Modeling Spatial and Energy Oxide Trap Distribution Responsible for NBTI in p-Channel Power U-MOSFETs 121
Evaluation of ultra-thin double gate MOSFET for the 45 nm technology node 120
Analysis of two alternative scaling strategies for sub-30 nm Double-Gate SOI MOSFETs 120
Simulation of self-heating effects in 30 nm gate length FinFET 120
Fabrication, simulation and experimental characterization of EWT solar cells with Deep Grooved Base contact 120
Reduction of RTS Noise in Small-Area MOSFETs Under Switched Bias Conditions and Forward Substrate Bias 120
Loss analysis of silicon solar cells by means of numerical device simulation 120
Ballistic effects in advanced MOSFETs along the Roadmap 119
Experimental characterization of low-frequency noise in power MOSFETs for defectiveness modelling and technology assessment 119
Totale 14.350
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Categoria #
all - tutte 43.002
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 43.002
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20204.455 655 99 61 226 464 499 554 620 599 319 130 229
2020/20212.590 465 165 64 94 31 273 49 117 252 175 159 746
2021/20227.771 373 110 1.063 838 1.011 782 909 768 860 219 373 465
2022/20232.640 284 274 123 345 161 214 66 126 576 43 278 150
2023/2024984 61 174 88 74 93 224 45 44 25 92 27 37
2024/202514 14 0 0 0 0 0 0 0 0 0 0 0
Totale 20.066