CRIS Current Research Information System

FIEGNA, CLAUDIO
 Distribuzione geografica
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Continente #
NA - Nord America 14.184
AS - Asia 6.220
EU - Europa 5.691
SA - Sud America 406
AF - Africa 395
OC - Oceania 4
Continente sconosciuto - Info sul continente non disponibili 1
Totale 26.901
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Nazione #
US - Stati Uniti d'America 14.124
CN - Cina 2.065
SG - Singapore 1.901
GB - Regno Unito 1.533
IT - Italia 999
VN - Vietnam 944
DE - Germania 753
RU - Federazione Russa 433
HK - Hong Kong 430
UA - Ucraina 414
SE - Svezia 381
IN - India 354
IE - Irlanda 342
BR - Brasile 295
FR - Francia 239
CI - Costa d'Avorio 160
KR - Corea 153
JP - Giappone 146
ZA - Sudafrica 135
EE - Estonia 116
FI - Finlandia 102
NL - Olanda 89
BG - Bulgaria 82
AR - Argentina 53
SC - Seychelles 50
TW - Taiwan 47
BE - Belgio 42
PK - Pakistan 39
CA - Canada 38
JO - Giordania 36
CH - Svizzera 34
ID - Indonesia 28
AT - Austria 27
TG - Togo 23
GR - Grecia 22
EC - Ecuador 17
PL - Polonia 17
TR - Turchia 17
CL - Cile 13
ES - Italia 12
MX - Messico 12
BD - Bangladesh 11
CO - Colombia 11
HR - Croazia 10
MY - Malesia 10
CZ - Repubblica Ceca 9
LB - Libano 9
LT - Lituania 6
NG - Nigeria 5
PY - Paraguay 5
UZ - Uzbekistan 5
VE - Venezuela 5
AE - Emirati Arabi Uniti 4
AU - Australia 4
DO - Repubblica Dominicana 4
DZ - Algeria 4
PT - Portogallo 4
RO - Romania 4
SA - Arabia Saudita 4
AL - Albania 3
IQ - Iraq 3
KZ - Kazakistan 3
MD - Moldavia 3
PA - Panama 3
SI - Slovenia 3
SK - Slovacchia (Repubblica Slovacca) 3
TN - Tunisia 3
UY - Uruguay 3
AO - Angola 2
AZ - Azerbaigian 2
EG - Egitto 2
IR - Iran 2
KE - Kenya 2
LU - Lussemburgo 2
NP - Nepal 2
PE - Perù 2
SN - Senegal 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BA - Bosnia-Erzegovina 1
BH - Bahrain 1
BO - Bolivia 1
BW - Botswana 1
BY - Bielorussia 1
BZ - Belize 1
CG - Congo 1
CV - Capo Verde 1
DK - Danimarca 1
GT - Guatemala 1
HU - Ungheria 1
KG - Kirghizistan 1
KW - Kuwait 1
LV - Lettonia 1
MA - Marocco 1
MC - Monaco 1
MU - Mauritius 1
MW - Malawi 1
PH - Filippine 1
PR - Porto Rico 1
RS - Serbia 1
SR - Suriname 1
Totale 26.899
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Città #
Ann Arbor 5.419
Southend 1.318
Singapore 1.236
Fairfield 1.076
Ashburn 753
Wilmington 642
Santa Clara 599
Chandler 559
Woodbridge 533
Seattle 473
Houston 420
Hong Kong 417
Dong Ket 413
Cambridge 392
Hefei 357
Dublin 342
Princeton 337
Jacksonville 289
Beijing 284
Bologna 232
Boardman 207
Nanjing 187
Abidjan 160
Redmond 155
Padova 153
Westminster 147
Seoul 142
Tokyo 134
New York 118
Berlin 108
Ho Chi Minh City 90
Turin 90
Leesburg 87
Sofia 82
Los Angeles 81
Medford 81
Saint Petersburg 78
Cesena 77
Buffalo 74
Jinan 71
Hanoi 68
Shenyang 61
Frankfurt am Main 60
Dallas 59
Mülheim 59
San Diego 57
Milan 54
Redondo Beach 54
Changsha 51
Guangzhou 51
Dearborn 49
Tianjin 47
Hebei 45
Nanchang 45
Helsinki 42
Lappeenranta 40
Amman 36
Brussels 34
Falls Church 34
Zhengzhou 34
London 33
Mahé 33
Norwalk 33
Rahim Yar Khan 31
Shanghai 31
Bengaluru 27
Chicago 24
Jiaxing 24
Hangzhou 23
Lomé 23
Redwood City 23
The Dalles 23
São Paulo 22
Hsinchu 21
Verona 21
Hyderabad 20
Munich 20
Olalla 20
Yubileyny 20
Bern 19
Des Moines 19
Eindhoven 19
Haikou 19
Lanzhou 18
Turku 18
Amsterdam 17
Forlì 16
Fremont 16
Genova 16
Nuremberg 16
Kunming 14
Ningbo 14
Taiyuan 14
Phoenix 13
Shenzhen 13
Toronto 13
Brooklyn 12
Moscow 12
Bühl 11
Falkenstein 11
Totale 20.185
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Nome #
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation 310
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs 279
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide 262
TCAD investigation on hot-electron injection in new-generation technologies 259
Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation 255
Analysis of the impact of geometrical and technological parameters on recombination losses in interdigitated back-contact solar cells 254
Analysis of Silicon Solar Cells With Poly-Si/SiOx Carrier-Selective Base and Emitter Contacts 251
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors 246
Development of an analytical mobility model for the simulation of ultra-thin single- and double-gate SOI MOSFETs 236
Characterization and Modeling of BTI in SiC MOSFETs 233
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 231
A Methodology to Account for the Finger Non-Uniformity in Photovoltaic Solar Cell 228
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture 218
Computational efficient RCWA method for simulation of thin film solar cells 215
Advanced electro-optical simulation of nanowire-based solar cells 209
Analysis of the EWT-DGB solar cell at low and medium concentration and comparison with a PESC architecture 209
AC and DC numerical simulation of Self–Heating Effects in FinFETs 206
Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap: A Monte Carlo study 204
Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation 202
Gate Reliability of p-GaN HEMT with Gate Metal Retraction 202
Analysis of Scaling Strategies for Sub-30 nm Double-Gate SOI N-MOSFETs 200
2-D numerical simulation and modeling of monocrystalline selective emitter solar cells 200
An improved semiclassical Monte-Carlo appproach for nano-scale MOSFET simulation 199
Comparison of Advanced Transport Models for Nanoscale nMOSFETs 198
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors 197
Application of a computationally efficient implementation of the RCWA method to numerical simulations of thin film amorphous solar cells 194
2-D Numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance 191
An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation 188
Analysis of double-gate MOS structures by solving Poisson and Schroedinger equations with open boundaries 187
Small-signal Analysis of deca-nanometer bulk and SOI MOSFETs for Analog/Mixed-signal and RF applications using the Time-Dependent Monte Carlo Approach 187
A Monte-Carlo study of the role of scattering in deca-nanometer MOSFETs 187
Advanced protective coatings for reflectivity enhancement by low temperature atomic layer deposition of HfO2on Al surfaces for micromirror applications 186
Numerical simulation and modeling of rear point contact solar cells 184
Characterization and Modeling of Hot Carrier-Induced Variability in Subthreshold Region 184
Analysis of strained-silicon-on-insulator double-gate MOS structures 183
A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter 182
Analysis of Silicon Dioxide Interface Transition Region in MOS Structures 182
Brownian dynamics simulation of ion channels embedded in silicon membranes for sensor applications 182
Positive Bias Temperature Instability in SiC-Based Power MOSFETs 181
Understandig Quasi-Ballistics Trasport in Nano-MOSFETS: Part I Scattering in the Channel and in the Drain 178
Quasiballistic Transport in Nano-MOSFETs 178
Analysis of Ballistic Transport in MOSFETs along the ITRS Roadmap 177
Understandig quasi-ballistics trasport in nano-MOSFETS: Part II Technology scaling along the ITRS 177
A novel Brownian-Dynamics Algorithm for the Simulation of Ion Conduction Through Membrane Pores 177
Ballistic effects in advanced MOSFETs along the Roadmap 176
Stability of self-consistent Monte Carlo Simulations: effects of the grid size and of the coupling scheme 175
Drain current computation in nanoscale nMOSFETs: Comparison of transport models 175
Computationally efficient method for optical simulation of solar cells and their applications 175
A Comparative Study of MWT Architectures by Means of Numerical Simulations 175
A Distributed Electrical Network to Model the Local Shunting in Multicrystalline Silicon Solar Cells 174
Analysis of the Impact of Doping Levels on Performance of back Contact-Back Junction Solar Cells 174
Optimization of Rear Point Contact Geometry by Means of 3-D Numerical Simulation 174
Impact of Hot Carriers on nMOSFET Variability in 45- and 65-nm CMOS Technologies 173
Effect of shunt resistance on the performance of mc-Silicon solar cells: a combined electro-optical and thermal investigation 172
Understanding the impact of double screen-printing on silicon solar cells by 2-D numerical simulations 172
Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-Signal and RF applications 171
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 171
Two- and Three-Dimensional Numerical Simulation of Advanced Silicon Solar Cells 171
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs 171
Failure mode for p-GaN gates under forward gate stress with varying Mg concentration 171
Monte-Carlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections 170
ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence 170
Loss analysis of silicon solar cells by means of numerical device simulation 170
TCAD predictions of hot-electron injection in p-type LDMOS transistors 170
Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks 169
Particle-based Simulation of Conductance of Solid State Nanopores and Ion Channels 169
A Distributed Electrical Model for Interdigitated back Contact Silicon Solar Cells 169
Experimental technique for the performance evaluation and optimization of 1/f noise spectrum investigation in electron devices 169
Comparison of three-dimensional Poisson solution methods for particle-based simulation and inhomogeneous dielectrics 169
Performance Analysis of Rear Point Contact Solar Cells by Three-Dimensional Numerical Simulation 169
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs 169
Scaling the High-Performance Double-Gate SOI MOSFET down to the 32 nm Technology Node with SiO2-based Gate Stacks 168
The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs 168
Simulation of micro-mirrors for optical MEMS 168
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 168
Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections 167
Noise Reduction in CMOS Circuits Through Switched Gate and Forward Substrate Bias 166
Brownian Dynamics Study of Current and Selectivity of Calcium Channels 166
Open issues for the numerical simulation of silicon solar cells 165
Evaluation of ultra-thin double gate MOSFET for the 45 nm technology node 163
Analysis of two alternative scaling strategies for sub-30 nm Double-Gate SOI MOSFETs 163
Understanding the Impact of the Doping Profiles on Selective Emitter Solar Cell by Two-Dimensional Numerical Simulation 163
Fabrication, simulation and experimental characterization of EWT solar cells with Deep Grooved Base contact 163
Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation 161
Three-Dimensional Brownian Dynamics Simulator for the Study of Ion Permeation through Membrane Pores 160
Fabrication, characterization and modeling of a silicon solar cell optimized for concentrated photovoltaic applications 160
Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode 160
Optical simulation of ZnO/CdTe and c-Si/a-Si vertical nanowires solar cells 160
Numerical simulation and modeling of thermal transient in silicon power devices 159
Understanding the Influence of Busbars in Large-Area IBC Solar Cells by Distributed SPICE Simulations 158
Simulation of Self-Heating Effects in Different SOI MOS Architectures 158
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs 157
Local Shunting in Multicrystalline Silicon Solar Cells: Distributed Electrical Simulations and Experiments 157
Numerical Simulation and Modeling of Resistive and Recombination Losses in MWT Solar Cells 157
Theoretical study of the impact of rear interface passivation on MWT silicon solar cells 157
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition 156
Simulation of self-heating effects in different SOI MOS architectures 155
Computational Efficient Solution of Maxwell's Equations for Lamellar Gratings 155
NBTI in p-channel power U-MOSFETs: Understanding the degradation and the recovery mechanisms2014 15th International Conference on Ultimate Integration on Silicon (ULIS) 155
Efficient Implementation of the Fourier Modal Method (RCWA) for the Optical Simulation of Optoelectronics Devices 155
Totale 18.489
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Categoria #
all - tutte 69.328
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 69.328
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.771 0 0 0 0 0 273 49 117 252 175 159 746
2021/20227.771 373 110 1.063 838 1.011 782 909 768 860 219 373 465
2022/20232.640 284 274 123 345 161 214 66 126 576 43 278 150
2023/2024984 61 174 88 74 93 224 45 44 25 92 27 37
2024/20253.431 206 547 262 304 809 127 280 78 52 111 152 503
2025/20263.772 408 702 834 523 940 365 0 0 0 0 0 0
Totale 27.255