CRIS Current Research Information System

FIEGNA, CLAUDIO
 Distribuzione geografica
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Continente #
NA - Nord America 15.238
AS - Asia 8.391
EU - Europa 6.088
SA - Sud America 450
AF - Africa 421
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 1
Totale 30.594
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Nazione #
US - Stati Uniti d'America 15.154
CN - Cina 2.366
SG - Singapore 2.171
VN - Vietnam 2.119
GB - Regno Unito 1.547
IT - Italia 1.109
DE - Germania 785
HK - Hong Kong 463
RU - Federazione Russa 439
FR - Francia 419
UA - Ucraina 419
IN - India 405
SE - Svezia 381
IE - Irlanda 342
BR - Brasile 320
JP - Giappone 194
KR - Corea 183
CI - Costa d'Avorio 160
ZA - Sudafrica 140
EE - Estonia 116
FI - Finlandia 114
NL - Olanda 97
BG - Bulgaria 82
TW - Taiwan 76
PK - Pakistan 62
BD - Bangladesh 59
AR - Argentina 58
CA - Canada 51
PH - Filippine 50
SC - Seychelles 50
BE - Belgio 45
JO - Giordania 39
CH - Svizzera 37
ID - Indonesia 35
TH - Thailandia 33
TR - Turchia 33
AT - Austria 28
GR - Grecia 24
IQ - Iraq 23
TG - Togo 23
ES - Italia 20
PL - Polonia 20
EC - Ecuador 19
MY - Malesia 18
CL - Cile 17
CO - Colombia 16
MX - Messico 15
SA - Arabia Saudita 15
CZ - Repubblica Ceca 13
HR - Croazia 10
LB - Libano 9
UZ - Uzbekistan 9
ET - Etiopia 8
LT - Lituania 8
PY - Paraguay 6
VE - Venezuela 6
AL - Albania 5
AU - Australia 5
DO - Repubblica Dominicana 5
EG - Egitto 5
KZ - Kazakistan 5
NG - Nigeria 5
NP - Nepal 5
RO - Romania 5
AE - Emirati Arabi Uniti 4
AO - Angola 4
DZ - Algeria 4
KE - Kenya 4
PT - Portogallo 4
TN - Tunisia 4
AZ - Azerbaigian 3
CR - Costa Rica 3
KG - Kirghizistan 3
MD - Moldavia 3
PA - Panama 3
PE - Perù 3
SI - Slovenia 3
SK - Slovacchia (Repubblica Slovacca) 3
UY - Uruguay 3
BW - Botswana 2
IR - Iran 2
JM - Giamaica 2
LU - Lussemburgo 2
LV - Lettonia 2
LY - Libia 2
SN - Senegal 2
SY - Repubblica araba siriana 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BA - Bosnia-Erzegovina 1
BH - Bahrain 1
BO - Bolivia 1
BY - Bielorussia 1
BZ - Belize 1
CG - Congo 1
CV - Capo Verde 1
DK - Danimarca 1
GA - Gabon 1
GT - Guatemala 1
HN - Honduras 1
HU - Ungheria 1
Totale 30.580
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Città #
Ann Arbor 5.419
Singapore 1.462
Southend 1.318
Fairfield 1.076
Ashburn 817
Wilmington 642
Santa Clara 620
Chandler 560
Woodbridge 533
Seattle 473
San Jose 471
Hong Kong 436
Houston 423
Dong Ket 413
Ho Chi Minh City 413
Cambridge 392
Hefei 362
Dublin 342
Princeton 337
Hanoi 323
Beijing 302
Jacksonville 290
Bologna 247
Boardman 221
Nanjing 190
Lauterbourg 167
Abidjan 160
Tokyo 157
Redmond 155
Padova 153
Westminster 147
New York 146
Seoul 144
Los Angeles 110
Berlin 109
Council Bluffs 108
Turin 90
Leesburg 87
Medford 82
Sofia 82
Buffalo 80
Milan 80
Frankfurt am Main 78
Saint Petersburg 78
Cesena 77
Jinan 73
Dallas 68
Haiphong 67
Shenyang 63
Guangzhou 60
Mülheim 59
San Diego 57
Changsha 55
Redondo Beach 54
Helsinki 50
Dearborn 49
Tianjin 49
Nanchang 48
Hebei 45
Lappeenranta 44
Da Nang 42
Shanghai 42
Bengaluru 40
The Dalles 40
Amman 39
Brussels 36
Zhengzhou 35
Falls Church 34
London 34
Mahé 33
Norwalk 33
Rahim Yar Khan 31
Hangzhou 29
Rimini 29
Chicago 27
São Paulo 26
Munich 25
Hsinchu 24
Jiaxing 24
Lomé 23
Nuremberg 23
Redwood City 23
Amsterdam 22
Hyderabad 22
Phoenix 22
Des Moines 21
Orem 21
Verona 21
Olalla 20
Yubileyny 20
Bern 19
Eindhoven 19
Haikou 19
Naples 19
Kunming 18
Lanzhou 18
Turku 18
Biên Hòa 16
Brooklyn 16
Forlì 16
Totale 22.252
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Nome #
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation 324
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs 305
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors 299
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide 286
Analysis of the impact of geometrical and technological parameters on recombination losses in interdigitated back-contact solar cells 285
TCAD investigation on hot-electron injection in new-generation technologies 278
Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation 277
Analysis of Silicon Solar Cells With Poly-Si/SiOx Carrier-Selective Base and Emitter Contacts 275
Characterization and Modeling of BTI in SiC MOSFETs 271
A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter 259
Development of an analytical mobility model for the simulation of ultra-thin single- and double-gate SOI MOSFETs 255
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 255
A Methodology to Account for the Finger Non-Uniformity in Photovoltaic Solar Cell 246
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture 243
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors 236
Analysis of the EWT-DGB solar cell at low and medium concentration and comparison with a PESC architecture 235
Computational efficient RCWA method for simulation of thin film solar cells 234
Gate Reliability of p-GaN HEMT with Gate Metal Retraction 226
AC and DC numerical simulation of Self–Heating Effects in FinFETs 223
Positive Bias Temperature Instability in SiC-Based Power MOSFETs 221
Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation 221
Analysis of Scaling Strategies for Sub-30 nm Double-Gate SOI N-MOSFETs 219
Advanced protective coatings for reflectivity enhancement by low temperature atomic layer deposition of HfO2on Al surfaces for micromirror applications 218
Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap: A Monte Carlo study 217
Advanced electro-optical simulation of nanowire-based solar cells 217
Quasiballistic Transport in Nano-MOSFETs 216
2-D numerical simulation and modeling of monocrystalline selective emitter solar cells 216
Comparison of Advanced Transport Models for Nanoscale nMOSFETs 215
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current 212
An improved semiclassical Monte-Carlo appproach for nano-scale MOSFET simulation 210
2-D Numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance 208
Numerical simulation and modeling of rear point contact solar cells 206
Application of a computationally efficient implementation of the RCWA method to numerical simulations of thin film amorphous solar cells 205
Analysis of double-gate MOS structures by solving Poisson and Schroedinger equations with open boundaries 204
Small-signal Analysis of deca-nanometer bulk and SOI MOSFETs for Analog/Mixed-signal and RF applications using the Time-Dependent Monte Carlo Approach 204
A Monte-Carlo study of the role of scattering in deca-nanometer MOSFETs 204
Scaling the High-Performance Double-Gate SOI MOSFET down to the 32 nm Technology Node with SiO2-based Gate Stacks 203
Brownian dynamics simulation of ion channels embedded in silicon membranes for sensor applications 203
Experimental technique for the performance evaluation and optimization of 1/f noise spectrum investigation in electron devices 203
An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation 203
Ballistic effects in advanced MOSFETs along the Roadmap 202
A novel Brownian-Dynamics Algorithm for the Simulation of Ion Conduction Through Membrane Pores 200
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs 199
Analysis of Ballistic Transport in MOSFETs along the ITRS Roadmap 199
Noise Reduction in CMOS Circuits Through Switched Gate and Forward Substrate Bias 198
A Distributed Electrical Network to Model the Local Shunting in Multicrystalline Silicon Solar Cells 198
Understandig Quasi-Ballistics Trasport in Nano-MOSFETS: Part I Scattering in the Channel and in the Drain 197
Characterization and Modeling of Hot Carrier-Induced Variability in Subthreshold Region 197
Analysis of the Impact of Doping Levels on Performance of back Contact-Back Junction Solar Cells 197
Optimization of Rear Point Contact Geometry by Means of 3-D Numerical Simulation 197
P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime 196
Particle-based Simulation of Conductance of Solid State Nanopores and Ion Channels 196
Effect of shunt resistance on the performance of mc-Silicon solar cells: a combined electro-optical and thermal investigation 195
Fabrication, characterization and modeling of a silicon solar cell optimized for concentrated photovoltaic applications 195
A Comparative Study of MWT Architectures by Means of Numerical Simulations 195
Performance Analysis of Rear Point Contact Solar Cells by Three-Dimensional Numerical Simulation 195
Analysis of strained-silicon-on-insulator double-gate MOS structures 194
Understandig quasi-ballistics trasport in nano-MOSFETS: Part II Technology scaling along the ITRS 194
Loss analysis of silicon solar cells by means of numerical device simulation 194
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs 194
Simulation of micro-mirrors for optical MEMS 193
Analysis of Silicon Dioxide Interface Transition Region in MOS Structures 192
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 192
Drain current computation in nanoscale nMOSFETs: Comparison of transport models 192
ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence 192
Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks 191
Two- and Three-Dimensional Numerical Simulation of Advanced Silicon Solar Cells 191
Theoretical study of the impact of rear interface passivation on MWT silicon solar cells 191
Stability of self-consistent Monte Carlo Simulations: effects of the grid size and of the coupling scheme 190
Comparison of three-dimensional Poisson solution methods for particle-based simulation and inhomogeneous dielectrics 190
A Distributed Electrical Model for Interdigitated back Contact Silicon Solar Cells 189
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 189
Impact of Hot Carriers on nMOSFET Variability in 45- and 65-nm CMOS Technologies 189
Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-Signal and RF applications 188
TCAD predictions of hot-electron injection in p-type LDMOS transistors 188
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition 187
Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode 187
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate 185
Evaluation of ultra-thin double gate MOSFET for the 45 nm technology node 185
Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections 185
Computationally efficient method for optical simulation of solar cells and their applications 185
Analysis of two alternative scaling strategies for sub-30 nm Double-Gate SOI MOSFETs 184
Monte-Carlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections 184
Understanding the Impact of the Doping Profiles on Selective Emitter Solar Cell by Two-Dimensional Numerical Simulation 184
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs 184
Failure mode for p-GaN gates under forward gate stress with varying Mg concentration 184
Optical simulation of ZnO/CdTe and c-Si/a-Si vertical nanowires solar cells 184
Understanding the impact of double screen-printing on silicon solar cells by 2-D numerical simulations 183
Brownian Dynamics Study of Current and Selectivity of Calcium Channels 182
Numerical Simulation and Modeling of Resistive and Recombination Losses in MWT Solar Cells 182
Open issues for the numerical simulation of silicon solar cells 181
Understanding the Influence of Busbars in Large-Area IBC Solar Cells by Distributed SPICE Simulations 181
Fabrication, simulation and experimental characterization of EWT solar cells with Deep Grooved Base contact 181
Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate 181
Simulation of Self-Heating Effects in Different SOI MOS Architectures 180
The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs 179
Three-Dimensional Brownian Dynamics Simulator for the Study of Ion Permeation through Membrane Pores 179
Numerical simulation of the impact of design parameters on the performance of back-contact back-junction solar cell 179
Negative Bias Temperature Stress Reliability in Trench-Gated P-Channel Power MOSFETs 179
ULIS 2005 178
Totale 20.789
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Categoria #
all - tutte 78.630
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 78.630
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021746 0 0 0 0 0 0 0 0 0 0 0 746
2021/20227.771 373 110 1.063 838 1.011 782 909 768 860 219 373 465
2022/20232.640 284 274 123 345 161 214 66 126 576 43 278 150
2023/2024984 61 174 88 74 93 224 45 44 25 92 27 37
2024/20253.431 206 547 262 304 809 127 280 78 52 111 152 503
2025/20267.474 408 702 834 523 940 428 693 259 1.711 499 226 251
Totale 30.957