In this paper, we present the results of a combined measurement/simulation analysis of the degradation induced by on-state stress in Au-free AlGaN/gallium-nitride-on-Si Schottky barrier diodes (SBDs). Turn-on voltage (VTON) and on-resistance (RON) are affected by charge carrier trapping/detrapping, occurring in different regions and caused by different mechanisms, when a high stress current is applied to the device. In particular, we have investigated the degradation of SBDs adopting different stress conditions and analyzing the influence of the diode geometry; consequently, we were able to identify the physical mechanisms responsible for long-Term degradation of VTON and RON. In addition, thanks to this approach, a critical electric field for the RON degradation has been determined.
Tallarico, A.N., Magnone, P., Stoffels, S., Lenci, S., Hu, J., Marcon, D., et al. (2016). ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(9), 3479-3486 [10.1109/TED.2016.2593945].
ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence
TALLARICO, ANDREA NATALE;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2016
Abstract
In this paper, we present the results of a combined measurement/simulation analysis of the degradation induced by on-state stress in Au-free AlGaN/gallium-nitride-on-Si Schottky barrier diodes (SBDs). Turn-on voltage (VTON) and on-resistance (RON) are affected by charge carrier trapping/detrapping, occurring in different regions and caused by different mechanisms, when a high stress current is applied to the device. In particular, we have investigated the degradation of SBDs adopting different stress conditions and analyzing the influence of the diode geometry; consequently, we were able to identify the physical mechanisms responsible for long-Term degradation of VTON and RON. In addition, thanks to this approach, a critical electric field for the RON degradation has been determined.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
