This paper presents the results of a comparison among five Monte Carlo device simulators for nano-scale MOSFETs. These models are applied to the simulation of the I-V characteristics of a 25 nm gate-length MOSFET representative of the high-performance transistor of the 65 nm technology node. Appreciable differences between the simulators are obtained in terms of simulated ION. These differences are mainly related to different treatments of the ionized impurity scattering (IIS) and pinpoint a limitation of the available models for screening effects at very large carrier concentrations.
C. Fiegna, M. Braccioli, S. C. Brugger, F. M. Bufler, P. Dollfus, V. Aubry-Fortuna, et al. (2007). Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs. WIEN NEW YORK : Springer Verlag.
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs
FIEGNA, CLAUDIO;BRACCIOLI, MARCO;SANGIORGI, ENRICO;
2007
Abstract
This paper presents the results of a comparison among five Monte Carlo device simulators for nano-scale MOSFETs. These models are applied to the simulation of the I-V characteristics of a 25 nm gate-length MOSFET representative of the high-performance transistor of the 65 nm technology node. Appreciable differences between the simulators are obtained in terms of simulated ION. These differences are mainly related to different treatments of the ionized impurity scattering (IIS) and pinpoint a limitation of the available models for screening effects at very large carrier concentrations.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
