We study the Si(100) inversion layer quantisation, capacitance and tunnelling characteristics in the case of a gradual band gap transition at the Si/SiO2 interface. A linear band gap transition of 0.5 nm at the SiO2 side results in nearly 20% redistribution of carriers from the 2-fold to the 4-fold degenerate valley, due to the greater wave-function penetration and sub-band level lowering for the 4-fold valley. The gate capacitance is enhanced by up to 12% for a 1.0 nm nominal oxide thickness, and the direct tunnelling current density increases by an order of magnitude.
S. Markov , N. Barin, C. Fiegna, S. Roy, E. Sangiorgi, A. Asenov (2007). Analysis of Silicon Dioxide Interface Transition Region in MOS Structures. WIEN NEW YORK : Springer Verlag.
Analysis of Silicon Dioxide Interface Transition Region in MOS Structures
FIEGNA, CLAUDIO;SANGIORGI, ENRICO;
2007
Abstract
We study the Si(100) inversion layer quantisation, capacitance and tunnelling characteristics in the case of a gradual band gap transition at the Si/SiO2 interface. A linear band gap transition of 0.5 nm at the SiO2 side results in nearly 20% redistribution of carriers from the 2-fold to the 4-fold degenerate valley, due to the greater wave-function penetration and sub-band level lowering for the 4-fold valley. The gate capacitance is enhanced by up to 12% for a 1.0 nm nominal oxide thickness, and the direct tunnelling current density increases by an order of magnitude.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
