In this work, a Monte-Carlo simulator including the most relevant scattering mechanisms and quantum corrections to the potential, already extensively applied to the DC analysis of ultra-short devices and upgraded in order to allow RF device analysis, is applied to the investigation of the RF performance of bulk MOSFETs designed according to the prescriptions of the 2005 ITRS Roadmap and of a 53 nm ultra-thin-body (UTB) single-gate (SG) SOI MOSFET. Original contributions consist in the analysis of the signal-delay build-up along the channel and investigation of the scaling properties of the parameters of the AC equivalent circuit, transition frequency FT and 3dB bandwidth of the voltage gain in common-source configuration. The effects of ballistic transport and their impact on the AC figures of merit are investigated for short UTB Double-Gate (DG) MOSFETs.
Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-Signal and RF applications / S. Eminente; N. Barin; P. Palestri; C. Fiegna; E. Sangiorgi. - STAMPA. - (2006), pp. 953-956. (Intervento presentato al convegno International Electron Devices Meeting 2006 tenutosi a San Francisco, CA, USA nel December 11-13. 2006).
Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-Signal and RF applications
EMINENTE, SIMONE;FIEGNA, CLAUDIO;SANGIORGI, ENRICO
2006
Abstract
In this work, a Monte-Carlo simulator including the most relevant scattering mechanisms and quantum corrections to the potential, already extensively applied to the DC analysis of ultra-short devices and upgraded in order to allow RF device analysis, is applied to the investigation of the RF performance of bulk MOSFETs designed according to the prescriptions of the 2005 ITRS Roadmap and of a 53 nm ultra-thin-body (UTB) single-gate (SG) SOI MOSFET. Original contributions consist in the analysis of the signal-delay build-up along the channel and investigation of the scaling properties of the parameters of the AC equivalent circuit, transition frequency FT and 3dB bandwidth of the voltage gain in common-source configuration. The effects of ballistic transport and their impact on the AC figures of merit are investigated for short UTB Double-Gate (DG) MOSFETs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
