This paper presents detailed DC and AC numerical simulations of thermal effects in nanoscale FinFET devices. Three–dimensional electro–thermal numerical simulations, including a realistic description of the source, drain and gate interconnections, are validated by comparison with DC I–V and AC small–signal parameters. The importance of a realistic description of the interconnects for the AC simulation of FinFETs is discussed.
AC and DC numerical simulation of Self–Heating Effects in FinFETs / M. Braccioli; A. Scholten; G. Curatola; E. Sangiorgi; C. Fiegna. - STAMPA. - (2010), pp. 81-84. (Intervento presentato al convegno 11th International Conference on Ultimate Integration on Silicon (ULIS 2010) tenutosi a Glasgow, UK nel 18th - 19th March 2010).
AC and DC numerical simulation of Self–Heating Effects in FinFETs
BRACCIOLI, MARCO;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2010
Abstract
This paper presents detailed DC and AC numerical simulations of thermal effects in nanoscale FinFET devices. Three–dimensional electro–thermal numerical simulations, including a realistic description of the source, drain and gate interconnections, are validated by comparison with DC I–V and AC small–signal parameters. The importance of a realistic description of the interconnects for the AC simulation of FinFETs is discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
