This paper presents detailed DC and AC numerical simulations of thermal effects in nanoscale FinFET devices. Three–dimensional electro–thermal numerical simulations, including a realistic description of the source, drain and gate interconnections, are validated by comparison with DC I–V and AC small–signal parameters. The importance of a realistic description of the interconnects for the AC simulation of FinFETs is discussed.

M. Braccioli, A. Scholten, G. Curatola, E. Sangiorgi, C. Fiegna (2010). AC and DC numerical simulation of Self–Heating Effects in FinFETs. GLASGOW : s.n.

AC and DC numerical simulation of Self–Heating Effects in FinFETs

BRACCIOLI, MARCO;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2010

Abstract

This paper presents detailed DC and AC numerical simulations of thermal effects in nanoscale FinFET devices. Three–dimensional electro–thermal numerical simulations, including a realistic description of the source, drain and gate interconnections, are validated by comparison with DC I–V and AC small–signal parameters. The importance of a realistic description of the interconnects for the AC simulation of FinFETs is discussed.
2010
Proceedings of the 11th International Conference on Ultimate Integration on Silicon
81
84
M. Braccioli, A. Scholten, G. Curatola, E. Sangiorgi, C. Fiegna (2010). AC and DC numerical simulation of Self–Heating Effects in FinFETs. GLASGOW : s.n.
M. Braccioli; A. Scholten; G. Curatola; E. Sangiorgi; C. Fiegna
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/88580
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