This paper presents detailed DC and AC numerical simulations of thermal effects in nanoscale FinFET devices. Three–dimensional electro–thermal numerical simulations, including a realistic description of the source, drain and gate interconnections, are validated by comparison with DC I–V and AC small–signal parameters. The importance of a realistic description of the interconnects for the AC simulation of FinFETs is discussed.
M. Braccioli, A. Scholten, G. Curatola, E. Sangiorgi, C. Fiegna (2010). AC and DC numerical simulation of Self–Heating Effects in FinFETs. GLASGOW : s.n.
AC and DC numerical simulation of Self–Heating Effects in FinFETs
BRACCIOLI, MARCO;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2010
Abstract
This paper presents detailed DC and AC numerical simulations of thermal effects in nanoscale FinFET devices. Three–dimensional electro–thermal numerical simulations, including a realistic description of the source, drain and gate interconnections, are validated by comparison with DC I–V and AC small–signal parameters. The importance of a realistic description of the interconnects for the AC simulation of FinFETs is discussed.File in questo prodotto:
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