This paper presents detailed DC and AC numerical simulations of thermal effects in nanoscale FinFET devices. Three–dimensional electro–thermal numerical simulations, including a realistic description of the source, drain and gate interconnections, are validated by comparison with DC I–V and AC small–signal parameters. The importance of a realistic description of the interconnects for the AC simulation of FinFETs is discussed.
AC and DC numerical simulation of Self–Heating Effects in FinFETs
BRACCIOLI, MARCO;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2010
Abstract
This paper presents detailed DC and AC numerical simulations of thermal effects in nanoscale FinFET devices. Three–dimensional electro–thermal numerical simulations, including a realistic description of the source, drain and gate interconnections, are validated by comparison with DC I–V and AC small–signal parameters. The importance of a realistic description of the interconnects for the AC simulation of FinFETs is discussed.File in questo prodotto:
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