Numerical modeling represent a powerful approach to investigate the physical loss mechanisms that limit the conversion efficiency of solar cells. In this paper, a comprehensive analysis of the different loss mechanisms affecting the performance of a conventional c-Si solar cell, such as optical losses, recombination losses and parasitic resistive losses, has been performed by means of numerical device simulations. Moreover, a detailed quantification of the impact of the different recombination mechanisms within the cell has been carried out through dark current-voltage simulations, both for a conventional c-Si solar cell and a high-efficiency selective emitter c-Si solar cell.
De Rose R., Magnone P., Zanuccoli M., Sangiorgi E., Fiegna C. (2013). Loss analysis of silicon solar cells by means of numerical device simulation [10.1109/ULIS.2013.6523520].
Loss analysis of silicon solar cells by means of numerical device simulation
DE ROSE, RAFFAELE;MAGNONE, PAOLO;ZANUCCOLI, MAURO;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2013
Abstract
Numerical modeling represent a powerful approach to investigate the physical loss mechanisms that limit the conversion efficiency of solar cells. In this paper, a comprehensive analysis of the different loss mechanisms affecting the performance of a conventional c-Si solar cell, such as optical losses, recombination losses and parasitic resistive losses, has been performed by means of numerical device simulations. Moreover, a detailed quantification of the impact of the different recombination mechanisms within the cell has been carried out through dark current-voltage simulations, both for a conventional c-Si solar cell and a high-efficiency selective emitter c-Si solar cell.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
