Numerical modeling represent a powerful approach to investigate the physical loss mechanisms that limit the conversion efficiency of solar cells. In this paper, a comprehensive analysis of the different loss mechanisms affecting the performance of a conventional c-Si solar cell, such as optical losses, recombination losses and parasitic resistive losses, has been performed by means of numerical device simulations. Moreover, a detailed quantification of the impact of the different recombination mechanisms within the cell has been carried out through dark current-voltage simulations, both for a conventional c-Si solar cell and a high-efficiency selective emitter c-Si solar cell.

Loss analysis of silicon solar cells by means of numerical device simulation

DE ROSE, RAFFAELE;MAGNONE, PAOLO;ZANUCCOLI, MAURO;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2013

Abstract

Numerical modeling represent a powerful approach to investigate the physical loss mechanisms that limit the conversion efficiency of solar cells. In this paper, a comprehensive analysis of the different loss mechanisms affecting the performance of a conventional c-Si solar cell, such as optical losses, recombination losses and parasitic resistive losses, has been performed by means of numerical device simulations. Moreover, a detailed quantification of the impact of the different recombination mechanisms within the cell has been carried out through dark current-voltage simulations, both for a conventional c-Si solar cell and a high-efficiency selective emitter c-Si solar cell.
2013
IEEE Proceedings 14th International Conference on Ultimate Integration on Silicon (ULIS), 2013
205
208
De Rose R.; Magnone P.; Zanuccoli M.; Sangiorgi E.; Fiegna C.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/144876
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