The hole impact-ionization coefficient and the hot-electron injection model presently available in the Synopsys TCAD tool have been calibrated, as a necessary step towards the possibility to predict the long-term reliability of the new generation p-channel power LDMOS devices integrated in BCD technology. First, the models have been calibrated on ad-hoc test structures such as p-channel MOSFETs with separated source and body contacts and n-channel MOSFETs with an additional sub-surface emitter region in order to have direct access to the experimental characterization of the impact-ionization under hole avalanche regime and of the hot-electron injection, respectively. Then, the calibrated models have been validated on p-channel power LDMOS featuring the STI architecture. The proposed TCAD approach accurately captures the relevant effects over an extended range of electric fields.

F. Giuliano, A.N.T. (2019). TCAD predictions of hot-electron injection in p-type LDMOS transistors [10.1109/ESSDERC.2019.8901703].

TCAD predictions of hot-electron injection in p-type LDMOS transistors

F. Giuliano;A. N. Tallarico;S. Reggiani;A. Gnudi;E. Sangiorgi;C. Fiegna;
2019

Abstract

The hole impact-ionization coefficient and the hot-electron injection model presently available in the Synopsys TCAD tool have been calibrated, as a necessary step towards the possibility to predict the long-term reliability of the new generation p-channel power LDMOS devices integrated in BCD technology. First, the models have been calibrated on ad-hoc test structures such as p-channel MOSFETs with separated source and body contacts and n-channel MOSFETs with an additional sub-surface emitter region in order to have direct access to the experimental characterization of the impact-ionization under hole avalanche regime and of the hot-electron injection, respectively. Then, the calibrated models have been validated on p-channel power LDMOS featuring the STI architecture. The proposed TCAD approach accurately captures the relevant effects over an extended range of electric fields.
2019
ESSDERC 2019 49th European Solid State Device Research Conference (ESSDERC)
86
89
F. Giuliano, A.N.T. (2019). TCAD predictions of hot-electron injection in p-type LDMOS transistors [10.1109/ESSDERC.2019.8901703].
F. Giuliano, A. N. Tallarico, S. Reggiani, A. Gnudi, E. Sangiorgi, C. Fiegna, M. Rossetti, A. Molfese, S. Manzini, R. Depetro, G. Croce
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/729173
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