In this work we present a three-dimensional numerical simulation technique for the study of ion permeation through ion channels embedded in silicon membranes, that can be exploited for sensor applications. The results of this work clarify how the charges embedded in the protein forming the ion channel can influence ionic conductance through silicon membrane slabs, controlling the channel conductance and selectivity with respect to ionic species.

C. Berti, S. Furini, E. Sangiorgi, C. Fiegna (2011). Brownian dynamics simulation of ion channels embedded in silicon membranes for sensor applications. 2011 IEEE [10.1109/ULIS.2011.5757953].

Brownian dynamics simulation of ion channels embedded in silicon membranes for sensor applications

BERTI, CLAUDIO;S. Furini;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2011

Abstract

In this work we present a three-dimensional numerical simulation technique for the study of ion permeation through ion channels embedded in silicon membranes, that can be exploited for sensor applications. The results of this work clarify how the charges embedded in the protein forming the ion channel can influence ionic conductance through silicon membrane slabs, controlling the channel conductance and selectivity with respect to ionic species.
2011
Ulis 2011 Ultimate Integration on Silicon
142
145
C. Berti, S. Furini, E. Sangiorgi, C. Fiegna (2011). Brownian dynamics simulation of ion channels embedded in silicon membranes for sensor applications. 2011 IEEE [10.1109/ULIS.2011.5757953].
C. Berti; S. Furini; E. Sangiorgi; C. Fiegna
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/138403
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