A state of the art Monte-Carlo simulator is applied to the investigation of the RF performance of Bulk and ultra-thin-body single-gate SOI MOSFETs designed according to the prescriptions of the 2005 ITRS Roadmap for analog and mixed signal applications. We provide an analysis of the signal-delay build-up along the channel and an investigation of the scaling properties of the parameters of the AC equivalent circuit, the transition frequency, and the 3dB bandwidth of the voltage gain in common-source configuration. A comparison with a standard drift diffusion approach is presented in order to discuss the main differences between the two transport models in terms of high-frequency AC analysis.

Small-signal Analysis of deca-nanometer bulk and SOI MOSFETs for Analog/Mixed-signal and RF applications using the Time-Dependent Monte Carlo Approach / S. Eminente; N. Barin; P. Palestri; C. Fiegna; E. Sangiorgi.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 9:(2007), pp. 2283-2292. [10.1109/TED.2007.902860]

Small-signal Analysis of deca-nanometer bulk and SOI MOSFETs for Analog/Mixed-signal and RF applications using the Time-Dependent Monte Carlo Approach

EMINENTE, SIMONE;FIEGNA, CLAUDIO;SANGIORGI, ENRICO
2007

Abstract

A state of the art Monte-Carlo simulator is applied to the investigation of the RF performance of Bulk and ultra-thin-body single-gate SOI MOSFETs designed according to the prescriptions of the 2005 ITRS Roadmap for analog and mixed signal applications. We provide an analysis of the signal-delay build-up along the channel and an investigation of the scaling properties of the parameters of the AC equivalent circuit, the transition frequency, and the 3dB bandwidth of the voltage gain in common-source configuration. A comparison with a standard drift diffusion approach is presented in order to discuss the main differences between the two transport models in terms of high-frequency AC analysis.
2007
Small-signal Analysis of deca-nanometer bulk and SOI MOSFETs for Analog/Mixed-signal and RF applications using the Time-Dependent Monte Carlo Approach / S. Eminente; N. Barin; P. Palestri; C. Fiegna; E. Sangiorgi.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 9:(2007), pp. 2283-2292. [10.1109/TED.2007.902860]
S. Eminente; N. Barin; P. Palestri; C. Fiegna; E. Sangiorgi.
File in questo prodotto:
Eventuali allegati, non sono esposti

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/46428
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 11
  • ???jsp.display-item.citation.isi??? 9
social impact