In this paper two Monte-Carlo simulators implementing different models for the influence of carrier quantization on the electrostatics and transport are used to analyze sub-100 nm double-gate SOI devices. To this purpose a new stable and efficient scheme to implement the contacts in the simulation of double-gate SOI devices is introduced first. Then, results in terms of drain current and microscopic quantities are compared, providing new insight on the limitation of a well assessed semiclassical transport simulation approach and a more rigorous multi-subband model.
I. Riolino, M. Braccioli, L. Lucci, P. Palestri, D. Esseni, C. Fiegna, et al. (2007). Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections. SOLID-STATE ELECTRONICS, 51, 1558-1564 [10.1016/j.sse.2007.09.011].
Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections
BRACCIOLI, MARCO;FIEGNA, CLAUDIO;
2007
Abstract
In this paper two Monte-Carlo simulators implementing different models for the influence of carrier quantization on the electrostatics and transport are used to analyze sub-100 nm double-gate SOI devices. To this purpose a new stable and efficient scheme to implement the contacts in the simulation of double-gate SOI devices is introduced first. Then, results in terms of drain current and microscopic quantities are compared, providing new insight on the limitation of a well assessed semiclassical transport simulation approach and a more rigorous multi-subband model.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
