In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-classical carrier transport in nano-MOSFETs, with particular focus on the inclusion of quantum-mechanical effects in the simulation (using either the multi-subband approach or quantum corrections to the electrostatic potential) and on the numerical stability issues related to the coupling of the transport with the Poisson equation. Selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials.
E. Sangiorgi, P. Palestri, D. Esseni, C. Fiegna, L. Selmi (2008). The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs. SOLID-STATE ELECTRONICS, 52, 1414-1423 [10.1016/j.sse.2008.04.007].
The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs
SANGIORGI, ENRICO;FIEGNA, CLAUDIO;
2008
Abstract
In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-classical carrier transport in nano-MOSFETs, with particular focus on the inclusion of quantum-mechanical effects in the simulation (using either the multi-subband approach or quantum corrections to the electrostatic potential) and on the numerical stability issues related to the coupling of the transport with the Poisson equation. Selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
