In this paper, we present a study of the self-heating effects in GaN-based power devices during static and dynamic operation mode by means of Sentaurus TCAD. A physical model interface (PMI), accounting for the temperature dependence of the thermal boundary resistance (TBR), has been implemented in the simulator in order to realistically model self-heating effects. In particular, we take into account for the TBR associated to the nucleation layer between GaN and SiC substrate. Moreover, the thermal contribution of the mutual heating among adjacent devices has been considered. Finally, we have investigated the influence of the temperature on the surface charges trapping and de-trapping phenomena showing two different traps occupancy transients. While one of the two occurs also in the isothermal condition, the second one is temperature activated.
Andrea Natale Tallarico, Paolo Magnone, Enrico Sangiorgi, Claudio Fiegna (2014). Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode. IEEE [10.1109/SISPAD.2014.6931606].
Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode
TALLARICO, ANDREA NATALE;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2014
Abstract
In this paper, we present a study of the self-heating effects in GaN-based power devices during static and dynamic operation mode by means of Sentaurus TCAD. A physical model interface (PMI), accounting for the temperature dependence of the thermal boundary resistance (TBR), has been implemented in the simulator in order to realistically model self-heating effects. In particular, we take into account for the TBR associated to the nucleation layer between GaN and SiC substrate. Moreover, the thermal contribution of the mutual heating among adjacent devices has been considered. Finally, we have investigated the influence of the temperature on the surface charges trapping and de-trapping phenomena showing two different traps occupancy transients. While one of the two occurs also in the isothermal condition, the second one is temperature activated.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.