The on-current and its ballistic limit for MOSFETs designed according to the 2003 International Technology Roadmap for Semiconductors down to the 45-nm node, are evaluated by using the full-band, self-consistent Monte Carlo simulator with quantum mechanical corrections described in Part I. Our results show that quasi-ballistic transport increases for LG below approximately 50 nm and contributes most part of the Ion improvements related to scaling. Thanks to a lower vertical electric field, double-gate silicon-on-insulator MOSFETs with ultrathin body and low channel doping achieve performance closer to the ballistic limit than the bulk counterparts.
Eminente S., Esseni D., Palestri P., Fiegna C., Selmi L., Sangiorgi E. (2005). Understandig quasi-ballistics trasport in nano-MOSFETS: Part II Technology scaling along the ITRS. IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(12), 2736-2743 [10.1109/TED.2005.859566].
Understandig quasi-ballistics trasport in nano-MOSFETS: Part II Technology scaling along the ITRS
EMINENTE, SIMONE;FIEGNA, CLAUDIO;SANGIORGI, ENRICO
2005
Abstract
The on-current and its ballistic limit for MOSFETs designed according to the 2003 International Technology Roadmap for Semiconductors down to the 45-nm node, are evaluated by using the full-band, self-consistent Monte Carlo simulator with quantum mechanical corrections described in Part I. Our results show that quasi-ballistic transport increases for LG below approximately 50 nm and contributes most part of the Ion improvements related to scaling. Thanks to a lower vertical electric field, double-gate silicon-on-insulator MOSFETs with ultrathin body and low channel doping achieve performance closer to the ballistic limit than the bulk counterparts.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
