The on-current and its ballistic limit for MOSFETs designed according to the 2003 International Technology Roadmap for Semiconductors down to the 45-nm node, are evaluated by using the full-band, self-consistent Monte Carlo simulator with quantum mechanical corrections described in Part I. Our results show that quasi-ballistic transport increases for LG below approximately 50 nm and contributes most part of the Ion improvements related to scaling. Thanks to a lower vertical electric field, double-gate silicon-on-insulator MOSFETs with ultrathin body and low channel doping achieve performance closer to the ballistic limit than the bulk counterparts.
Understandig quasi-ballistics trasport in nano-MOSFETS: Part II Technology scaling along the ITRS / Eminente S.; Esseni D.; Palestri P.; Fiegna C.; Selmi L.; Sangiorgi E.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 52:12(2005), pp. 2736-2743. [10.1109/TED.2005.859566]
Understandig quasi-ballistics trasport in nano-MOSFETS: Part II Technology scaling along the ITRS
EMINENTE, SIMONE;FIEGNA, CLAUDIO;SANGIORGI, ENRICO
2005
Abstract
The on-current and its ballistic limit for MOSFETs designed according to the 2003 International Technology Roadmap for Semiconductors down to the 45-nm node, are evaluated by using the full-band, self-consistent Monte Carlo simulator with quantum mechanical corrections described in Part I. Our results show that quasi-ballistic transport increases for LG below approximately 50 nm and contributes most part of the Ion improvements related to scaling. Thanks to a lower vertical electric field, double-gate silicon-on-insulator MOSFETs with ultrathin body and low channel doping achieve performance closer to the ballistic limit than the bulk counterparts.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
