This paper examines the impact of hot carriers (HCs) on n-channel metal-oxide-semiconductor (MOS) field-effect transistor mismatch across the 45- and 65-nm complementary MOS technology generations. The reported statistical analysis is based on a large overall sample population of about 1000 transistors. HC stress introduces a source of variability in device electrical parameters due to the randomly generated charge traps in the gate dielectric or at the substrate/dielectric interface. The evolution of the threshold-voltage mismatch during an HC stress is well modeled by assuming a Poisson distribution of the induced charge traps with a nonuniform generation along the channel. Once the evolution of the HC-induced VT shift is known, a single parameter is able to accurately describe the evolution of the HC-induced VT variability. This parameter is independent of the stress time and stress bias voltage. The HC stress causes a significantly larger degradation in the subthreshold slope variability, compared to threshold voltage variability for both investigated technology nodes.
Magnone P. , Crupi F. , Wils N. , Jain R. , Tuinhout H. , Andricciola P. , et al. (2011). Impact of Hot Carriers on nMOSFET Variability in 45- and 65-nm CMOS Technologies. IEEE TRANSACTIONS ON ELECTRON DEVICES, 58, 2347-2353 [10.1109/TED.2011.2156414].
Impact of Hot Carriers on nMOSFET Variability in 45- and 65-nm CMOS Technologies
MAGNONE, PAOLO;FIEGNA, CLAUDIO
2011
Abstract
This paper examines the impact of hot carriers (HCs) on n-channel metal-oxide-semiconductor (MOS) field-effect transistor mismatch across the 45- and 65-nm complementary MOS technology generations. The reported statistical analysis is based on a large overall sample population of about 1000 transistors. HC stress introduces a source of variability in device electrical parameters due to the randomly generated charge traps in the gate dielectric or at the substrate/dielectric interface. The evolution of the threshold-voltage mismatch during an HC stress is well modeled by assuming a Poisson distribution of the induced charge traps with a nonuniform generation along the channel. Once the evolution of the HC-induced VT shift is known, a single parameter is able to accurately describe the evolution of the HC-induced VT variability. This parameter is independent of the stress time and stress bias voltage. The HC stress causes a significantly larger degradation in the subthreshold slope variability, compared to threshold voltage variability for both investigated technology nodes.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
