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EnglishThis paper presents a detailed analysis of the dependence of performance of c-Si selective emitter solar cells on geometrical parameters and doping profiles. Based on two dimensional drift-diffusion TCAD simulations, we report the effects of the front contact pitch and doping profiles on the most important output parameters of solar cells. Simulations show that a significant gain in terms of output power of the cell may arise compared to the homogeneous emitter solar cell. We also present an analysis of the main loss mechanisms and trade-offs for this solar cell. DOI 10.1109/PVSC.2010
| Titolo: | 2-D numerical simulation and modeling of monocrystalline selective emitter solar cells |
| Autore/i: | ZANUCCOLI, MAURO; Bresciani P. F.; Frei M.; Guo H. W.; Fang H.; Agrawal M.; FIEGNA, CLAUDIO; SANGIORGI, ENRICO |
| Autore/i Unibo: | |
| Anno: | 2010 |
| Titolo del libro: | Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE |
| Pagina iniziale: | 2262 |
| Pagina finale: | 2265 |
| Abstract: | This paper presents a detailed analysis of the dependence of performance of c-Si selective emitter solar cells on geometrical parameters and doping profiles. Based on two dimensional drift-diffusion TCAD simulations, we report the effects of the front contact pitch and doping profiles on the most important output parameters of solar cells. Simulations show that a significant gain in terms of output power of the cell may arise compared to the homogeneous emitter solar cell. We also present an analysis of the main loss mechanisms and trade-offs for this solar cell. DOI 10.1109/PVSC.2010 |
| Data prodotto definitivo in UGOV: | 20-nov-2010 |
| Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
File in questo prodotto:
http://hdl.handle.net/11585/92684
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