SANGIORGI, ENRICO
 Distribuzione geografica
Continente #
NA - Nord America 17.007
AS - Asia 9.483
EU - Europa 8.065
AF - Africa 535
SA - Sud America 443
Continente sconosciuto - Info sul continente non disponibili 367
OC - Oceania 16
Totale 35.916
Nazione #
US - Stati Uniti d'America 16.372
VN - Vietnam 3.107
CN - Cina 2.358
SG - Singapore 2.221
GB - Regno Unito 2.134
IT - Italia 1.587
DE - Germania 1.211
FR - Francia 681
CA - Canada 588
SE - Svezia 517
HK - Hong Kong 493
UA - Ucraina 477
RU - Federazione Russa 463
IN - India 431
BR - Brasile 301
IE - Irlanda 227
JP - Giappone 205
CI - Costa d'Avorio 172
KR - Corea 159
ZA - Sudafrica 146
NL - Olanda 138
FI - Finlandia 131
EE - Estonia 109
BG - Bulgaria 95
BD - Bangladesh 77
TG - Togo 71
AR - Argentina 65
SC - Seychelles 64
BE - Belgio 60
PK - Pakistan 59
TW - Taiwan 56
PH - Filippine 55
CH - Svizzera 54
JO - Giordania 48
TR - Turchia 42
NG - Nigeria 36
TH - Thailandia 34
ID - Indonesia 33
ES - Italia 29
PL - Polonia 28
GR - Grecia 25
AT - Austria 24
EC - Ecuador 24
MX - Messico 24
IQ - Iraq 23
HR - Croazia 21
SA - Arabia Saudita 17
CL - Cile 15
MY - Malesia 15
AU - Australia 13
CO - Colombia 13
UZ - Uzbekistan 12
CZ - Repubblica Ceca 10
ET - Etiopia 9
LT - Lituania 8
EG - Egitto 7
PY - Paraguay 7
RO - Romania 7
LB - Libano 6
VE - Venezuela 6
AE - Emirati Arabi Uniti 5
AL - Albania 5
DZ - Algeria 5
PE - Perù 5
CR - Costa Rica 4
DK - Danimarca 4
IR - Iran 4
KE - Kenya 4
MA - Marocco 4
NP - Nepal 4
TN - Tunisia 4
UY - Uruguay 4
AO - Angola 3
DO - Repubblica Dominicana 3
HN - Honduras 3
JM - Giamaica 3
KG - Kirghizistan 3
KZ - Kazakistan 3
MD - Moldavia 3
PA - Panama 3
PS - Palestinian Territory 3
PT - Portogallo 3
SI - Slovenia 3
SK - Slovacchia (Repubblica Slovacca) 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AZ - Azerbaigian 2
BB - Barbados 2
BO - Bolivia 2
GT - Guatemala 2
IL - Israele 2
LV - Lettonia 2
OM - Oman 2
SN - Senegal 2
TT - Trinidad e Tobago 2
BY - Bielorussia 1
CG - Congo 1
CM - Camerun 1
CY - Cipro 1
GA - Gabon 1
GE - Georgia 1
Totale 35.534
Città #
Ann Arbor 5.466
Singapore 1.487
Southend 1.407
Fairfield 1.081
Ashburn 877
Chandler 754
Ho Chi Minh City 658
Wilmington 652
Santa Clara 625
Woodbridge 588
Dong Ket 587
Hanoi 523
Montréal 522
Seattle 489
San Jose 487
Hong Kong 467
Munich 430
Houston 421
Cambridge 417
Mcallen 390
Princeton 349
Bologna 324
Hefei 322
Jacksonville 317
Beijing 279
Boardman 249
Dublin 227
Nanjing 184
New York 174
Abidjan 172
Tokyo 169
Lauterbourg 161
Padova 157
Westminster 154
Redmond 131
Seoul 124
Council Bluffs 120
Berlin 114
Los Angeles 113
Medford 96
Sofia 95
Dallas 93
Jinan 92
Turin 88
Haiphong 87
Leesburg 87
Buffalo 83
Milan 82
Saint Petersburg 82
Shenyang 78
Frankfurt am Main 76
Lomé 71
Cesena 70
San Diego 67
Da Nang 64
Guangzhou 64
Changsha 62
Helsinki 61
Mülheim 61
Dearborn 52
Redondo Beach 52
Nanchang 51
Shanghai 51
Hebei 50
Brussels 49
Lappeenranta 49
Amman 47
Rome 47
The Dalles 46
Tianjin 45
Bern 36
London 36
Hải Dương 35
Abeokuta 34
Mahé 33
São Paulo 33
Zhengzhou 33
Bengaluru 32
Jiaxing 31
Biên Hòa 30
Thái Nguyên 30
Chicago 29
Des Moines 29
Rahim Yar Khan 29
Hyderabad 28
Norwalk 28
Redwood City 28
Amsterdam 27
Ha Long 27
Hangzhou 26
Verona 26
Naples 25
Rimini 25
Kunming 24
Olalla 24
Phoenix 24
Haikou 22
Ninh Bình 22
Bắc Ninh 21
Can Tho 21
Totale 25.114
Nome #
Nanopower-Integrated Electronics for Energy Harvesting, Conversion, and Management 1.483
Nano-power ICs for Energy Harvesting Applications in the Internet-of-Things 902
Non-Local Effects in pMOSFET Substrate Hot-Hole Injection Experiments 837
La ricerca formazione per l’innovazione della didattica universitaria 603
A thin film strip for aerodynamic body pressure profile monitoring 333
A non invasive capacitive sensor strip for aerodynamic pressure measurement 327
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation 326
Sostenere la formazione degli insegnanti attraverso l’interdisciplinarità: il sostegno alla ricerca in didattica e nelle didattiche disciplinari 325
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors 304
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide 294
Analysis of the impact of geometrical and technological parameters on recombination losses in interdigitated back-contact solar cells 286
TCAD investigation on hot-electron injection in new-generation technologies 286
Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation 281
Characterization and Modeling of BTI in SiC MOSFETs 272
Aircraft angle of attack and air speed detection by redundant strip pressure sensors 271
La ricerca-formazione per l’innovazione della didattica universitaria 262
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 259
Actively controlled power conversion techniques for piezoelectric energy harvesting applications 250
Physical simulations of response time in Hall sensor devices 246
A Methodology to Account for the Finger Non-Uniformity in Photovoltaic Solar Cell 246
An AC and phase nanowire sensing for site-binding detection 246
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture 246
Acquisition system for pressure sensor network 245
Joint Modeling of Piezoelectric Transducers and Power Conversion Circuits for Energy Harvesting Applications 243
Actively Controlled Power Conversion Techniques for Piezoelectric Energy Harvesting Applications 243
An Energy Autonomous Switching Converter for Harvesting Power from Multiple Piezoelectric Transducers 236
Analysis of the EWT-DGB solar cell at low and medium concentration and comparison with a PESC architecture 236
A methodology to account for the finger interruptions in solar cell performance 235
Computational efficient RCWA method for simulation of thin film solar cells 234
Fluid dynamic sensor array in printed circuit board technology for aerospace applications 230
Micro-power Scavenging from Multiple Heterogeneous Piezoelectric and RF Sources 227
Gate Reliability of p-GaN HEMT with Gate Metal Retraction 227
AC and DC numerical simulation of Self–Heating Effects in FinFETs 225
Optimum Design Rules for CMOS Hall Sensors 225
Positive Bias Temperature Instability in SiC-Based Power MOSFETs 223
Analysis of Scaling Strategies for Sub-30 nm Double-Gate SOI N-MOSFETs 221
Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation 221
Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap: A Monte Carlo study 219
Dynamic Switching Conversion for Piezoelectric Energy Harvesting Systems 219
Advanced electro-optical simulation of nanowire-based solar cells 219
Quasiballistic Transport in Nano-MOSFETs 217
2-D numerical simulation and modeling of monocrystalline selective emitter solar cells 217
Comparison of Advanced Transport Models for Nanoscale nMOSFETs 216
An improved semiclassical Monte-Carlo appproach for nano-scale MOSFET simulation 211
Modeling and characterization of piezoelectric transducers by means of scattering parameters. Part I: Theory 209
Piezoelectric transducers for real-time evaluation of fruit firmness. Part I: Theory and development of acoustic techniques 209
2-D Numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance 208
Numerical simulation and modeling of rear point contact solar cells 206
A Monte-Carlo study of the role of scattering in deca-nanometer MOSFETs 206
Small-signal Analysis of deca-nanometer bulk and SOI MOSFETs for Analog/Mixed-signal and RF applications using the Time-Dependent Monte Carlo Approach 205
Application of a computationally efficient implementation of the RCWA method to numerical simulations of thin film amorphous solar cells 205
Brownian dynamics simulation of ion channels embedded in silicon membranes for sensor applications 205
Doing a lot with a little: micropower conversion and management for ambient-powered electronics 205
Scaling the High-Performance Double-Gate SOI MOSFET down to the 32 nm Technology Node with SiO2-based Gate Stacks 204
An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation 204
Ballistic effects in advanced MOSFETs along the Roadmap 203
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs 203
Analysis of Ballistic Transport in MOSFETs along the ITRS Roadmap 202
A Rapid Modeling and Prototyping Technique for Piezoelectric Energy Harvesting Systems 202
Joint Modeling of Piezoelectric Transducers and Power Conversion Circuits for Energy Harvesting Applications 201
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs 200
Hybrid system for complex AC sensing of nanowires 199
A non-invasive capacitive sensor strip for aerodynamic pressure measurement 199
P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime 198
A Distributed Electrical Network to Model the Local Shunting in Multicrystalline Silicon Solar Cells 198
Fabrication, characterization and modeling of a silicon solar cell optimized for concentrated photovoltaic applications 198
Understandig Quasi-Ballistics Trasport in Nano-MOSFETS: Part I Scattering in the Channel and in the Drain 197
Piezoelectric transducers for real-time evaluation of fruit firmness. Part II: Statistical and sorting analysis 197
Optimization of Rear Point Contact Geometry by Means of 3-D Numerical Simulation 197
Understandig quasi-ballistics trasport in nano-MOSFETS: Part II Technology scaling along the ITRS 196
Particle-based Simulation of Conductance of Solid State Nanopores and Ion Channels 196
A Comparative Study of MWT Architectures by Means of Numerical Simulations 196
Towards energy autonomous ICs 195
Loss analysis of silicon solar cells by means of numerical device simulation 195
Performance Analysis of Rear Point Contact Solar Cells by Three-Dimensional Numerical Simulation 195
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition 194
Analysis of strained-silicon-on-insulator double-gate MOS structures 194
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 193
Theoretical study of the impact of rear interface passivation on MWT silicon solar cells 193
Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks 192
Analysis of Silicon Dioxide Interface Transition Region in MOS Structures 192
Drain current computation in nanoscale nMOSFETs: Comparison of transport models 192
Two- and Three-Dimensional Numerical Simulation of Advanced Silicon Solar Cells 192
ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence 192
Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-Signal and RF applications 190
Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode 189
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 189
TCAD predictions of hot-electron injection in p-type LDMOS transistors 189
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate 187
Computationally efficient method for optical simulation of solar cells and their applications 187
Influence of interface traps on the performance of Tunnel FETs 187
Understanding the Impact of the Doping Profiles on Selective Emitter Solar Cell by Two-Dimensional Numerical Simulation 186
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs 186
Evaluation of ultra-thin double gate MOSFET for the 45 nm technology node 185
Analysis of two alternative scaling strategies for sub-30 nm Double-Gate SOI MOSFETs 185
Modeling and characterization of piezoelectric transducers by means of scattering parameters. Part II: Application on colloidal suspension monitoring 185
Optical simulation of ZnO/CdTe and c-Si/a-Si vertical nanowires solar cells 184
Understanding the impact of double screen-printing on silicon solar cells by 2-D numerical simulations 183
Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate 183
Numerical Simulation and Modeling of Resistive and Recombination Losses in MWT Solar Cells 182
Totale 24.818
Categoria #
all - tutte 84.793
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 84.793


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20227.727 0 126 1.090 871 1.018 775 904 799 864 251 456 573
2022/20233.203 355 425 182 396 211 237 79 158 586 75 306 193
2023/20241.042 75 160 77 76 85 245 63 60 25 101 35 40
2024/20253.756 221 588 290 281 810 160 292 98 77 159 185 595
2025/20268.496 1.203 676 858 530 990 473 703 241 1.752 531 241 298
2026/2027219 217 2 0 0 0 0 0 0 0 0 0 0
Totale 35.916