CRIS Current Research Information System

SANGIORGI, ENRICO
 Distribuzione geografica
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Continente #
NA - Nord America 16.691
AS - Asia 9.354
EU - Europa 7.941
AF - Africa 530
SA - Sud America 420
OC - Oceania 16
Continente sconosciuto - Info sul continente non disponibili 2
Totale 34.954
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Nazione #
US - Stati Uniti d'America 16.080
VN - Vietnam 3.107
CN - Cina 2.331
SG - Singapore 2.195
GB - Regno Unito 2.133
IT - Italia 1.496
DE - Germania 1.211
FR - Francia 676
CA - Canada 575
SE - Svezia 500
HK - Hong Kong 477
UA - Ucraina 477
RU - Federazione Russa 463
IN - India 423
BR - Brasile 290
IE - Irlanda 227
JP - Giappone 204
CI - Costa d'Avorio 172
KR - Corea 158
ZA - Sudafrica 146
NL - Olanda 134
FI - Finlandia 131
EE - Estonia 109
BG - Bulgaria 95
TG - Togo 71
BE - Belgio 60
AR - Argentina 59
PK - Pakistan 59
SC - Seychelles 59
PH - Filippine 55
TW - Taiwan 55
CH - Svizzera 53
JO - Giordania 48
TR - Turchia 40
NG - Nigeria 36
TH - Thailandia 34
ID - Indonesia 33
BD - Bangladesh 30
PL - Polonia 27
ES - Italia 25
GR - Grecia 25
AT - Austria 24
IQ - Iraq 23
EC - Ecuador 22
MX - Messico 22
HR - Croazia 21
SA - Arabia Saudita 17
CL - Cile 15
MY - Malesia 15
AU - Australia 13
UZ - Uzbekistan 12
CO - Colombia 10
CZ - Repubblica Ceca 10
ET - Etiopia 9
LT - Lituania 8
EG - Egitto 7
PY - Paraguay 7
RO - Romania 7
LB - Libano 6
VE - Venezuela 6
AE - Emirati Arabi Uniti 5
AL - Albania 5
DZ - Algeria 5
DK - Danimarca 4
IR - Iran 4
KE - Kenya 4
MA - Marocco 4
NP - Nepal 4
PE - Perù 4
TN - Tunisia 4
UY - Uruguay 4
AO - Angola 3
CR - Costa Rica 3
DO - Repubblica Dominicana 3
KG - Kirghizistan 3
KZ - Kazakistan 3
MD - Moldavia 3
PA - Panama 3
PS - Palestinian Territory 3
PT - Portogallo 3
SI - Slovenia 3
SK - Slovacchia (Repubblica Slovacca) 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AZ - Azerbaigian 2
BO - Bolivia 2
GT - Guatemala 2
HN - Honduras 2
IL - Israele 2
LV - Lettonia 2
OM - Oman 2
SN - Senegal 2
BY - Bielorussia 1
CG - Congo 1
CM - Camerun 1
CY - Cipro 1
GA - Gabon 1
GE - Georgia 1
HU - Ungheria 1
JM - Giamaica 1
KW - Kuwait 1
Totale 34.940
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Città #
Ann Arbor 5.466
Singapore 1.463
Southend 1.407
Fairfield 1.081
Ashburn 859
Chandler 754
Ho Chi Minh City 658
Wilmington 652
Santa Clara 612
Dong Ket 587
Woodbridge 587
Hanoi 523
Montréal 522
Seattle 488
San Jose 475
Hong Kong 455
Munich 430
Houston 420
Cambridge 417
Mcallen 390
Princeton 349
Hefei 322
Jacksonville 316
Bologna 315
Beijing 267
Boardman 229
Dublin 227
Nanjing 184
Abidjan 172
Tokyo 168
New York 164
Lauterbourg 161
Padova 157
Westminster 154
Redmond 131
Seoul 124
Berlin 114
Los Angeles 108
Medford 96
Sofia 95
Jinan 92
Dallas 89
Turin 88
Haiphong 87
Leesburg 87
Saint Petersburg 82
Buffalo 79
Shenyang 78
Frankfurt am Main 76
Lomé 71
Cesena 70
Milan 69
San Diego 66
Da Nang 64
Guangzhou 64
Changsha 62
Helsinki 61
Mülheim 61
Dearborn 52
Redondo Beach 52
Nanchang 51
Hebei 50
Brussels 49
Lappeenranta 49
Shanghai 48
Amman 47
The Dalles 46
Tianjin 45
Council Bluffs 40
Rome 39
Bern 36
London 36
Hải Dương 35
Abeokuta 34
Mahé 33
Zhengzhou 33
Jiaxing 31
Biên Hòa 30
Thái Nguyên 30
Des Moines 29
Rahim Yar Khan 29
Chicago 28
Hyderabad 28
Norwalk 28
Redwood City 28
Ha Long 27
São Paulo 27
Amsterdam 26
Verona 26
Bengaluru 25
Hangzhou 25
Kunming 24
Olalla 24
Haikou 22
Ninh Bình 22
Bắc Ninh 21
Can Tho 21
Fremont 21
Paris 21
Falls Church 20
Totale 24.833
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Nome #
Nanopower-Integrated Electronics for Energy Harvesting, Conversion, and Management 1.481
Nano-power ICs for Energy Harvesting Applications in the Internet-of-Things 899
Non-Local Effects in pMOSFET Substrate Hot-Hole Injection Experiments 837
La ricerca formazione per l’innovazione della didattica universitaria 583
A thin film strip for aerodynamic body pressure profile monitoring 325
A non invasive capacitive sensor strip for aerodynamic pressure measurement 324
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation 323
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide 285
Analysis of the impact of geometrical and technological parameters on recombination losses in interdigitated back-contact solar cells 283
Sostenere la formazione degli insegnanti attraverso l’interdisciplinarità: il sostegno alla ricerca in didattica e nelle didattiche disciplinari 279
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors 278
Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation 277
TCAD investigation on hot-electron injection in new-generation technologies 276
Characterization and Modeling of BTI in SiC MOSFETs 270
Aircraft angle of attack and air speed detection by redundant strip pressure sensors 268
La ricerca-formazione per l’innovazione della didattica universitaria 255
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 253
Actively controlled power conversion techniques for piezoelectric energy harvesting applications 249
A Methodology to Account for the Finger Non-Uniformity in Photovoltaic Solar Cell 246
An AC and phase nanowire sensing for site-binding detection 245
Physical simulations of response time in Hall sensor devices 243
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture 243
Actively Controlled Power Conversion Techniques for Piezoelectric Energy Harvesting Applications 242
Joint Modeling of Piezoelectric Transducers and Power Conversion Circuits for Energy Harvesting Applications 241
Acquisition system for pressure sensor network 241
An Energy Autonomous Switching Converter for Harvesting Power from Multiple Piezoelectric Transducers 236
Analysis of the EWT-DGB solar cell at low and medium concentration and comparison with a PESC architecture 234
Computational efficient RCWA method for simulation of thin film solar cells 233
A methodology to account for the finger interruptions in solar cell performance 231
Fluid dynamic sensor array in printed circuit board technology for aerospace applications 228
Gate Reliability of p-GaN HEMT with Gate Metal Retraction 225
Micro-power Scavenging from Multiple Heterogeneous Piezoelectric and RF Sources 224
Optimum Design Rules for CMOS Hall Sensors 223
AC and DC numerical simulation of Self–Heating Effects in FinFETs 222
Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation 219
Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap: A Monte Carlo study 217
Analysis of Scaling Strategies for Sub-30 nm Double-Gate SOI N-MOSFETs 217
Dynamic Switching Conversion for Piezoelectric Energy Harvesting Systems 217
Advanced electro-optical simulation of nanowire-based solar cells 217
Positive Bias Temperature Instability in SiC-Based Power MOSFETs 216
2-D numerical simulation and modeling of monocrystalline selective emitter solar cells 215
Comparison of Advanced Transport Models for Nanoscale nMOSFETs 213
An improved semiclassical Monte-Carlo appproach for nano-scale MOSFET simulation 210
2-D Numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance 208
Modeling and characterization of piezoelectric transducers by means of scattering parameters. Part I: Theory 207
Piezoelectric transducers for real-time evaluation of fruit firmness. Part I: Theory and development of acoustic techniques 207
Application of a computationally efficient implementation of the RCWA method to numerical simulations of thin film amorphous solar cells 205
Numerical simulation and modeling of rear point contact solar cells 205
Doing a lot with a little: micropower conversion and management for ambient-powered electronics 204
A Monte-Carlo study of the role of scattering in deca-nanometer MOSFETs 204
Quasiballistic Transport in Nano-MOSFETs 203
Brownian dynamics simulation of ion channels embedded in silicon membranes for sensor applications 202
An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation 202
Scaling the High-Performance Double-Gate SOI MOSFET down to the 32 nm Technology Node with SiO2-based Gate Stacks 201
Small-signal Analysis of deca-nanometer bulk and SOI MOSFETs for Analog/Mixed-signal and RF applications using the Time-Dependent Monte Carlo Approach 200
A Rapid Modeling and Prototyping Technique for Piezoelectric Energy Harvesting Systems 200
Ballistic effects in advanced MOSFETs along the Roadmap 199
Joint Modeling of Piezoelectric Transducers and Power Conversion Circuits for Energy Harvesting Applications 199
A Distributed Electrical Network to Model the Local Shunting in Multicrystalline Silicon Solar Cells 197
Hybrid system for complex AC sensing of nanowires 197
A non-invasive capacitive sensor strip for aerodynamic pressure measurement 197
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs 196
Analysis of Ballistic Transport in MOSFETs along the ITRS Roadmap 196
Piezoelectric transducers for real-time evaluation of fruit firmness. Part II: Statistical and sorting analysis 195
Fabrication, characterization and modeling of a silicon solar cell optimized for concentrated photovoltaic applications 195
Optimization of Rear Point Contact Geometry by Means of 3-D Numerical Simulation 195
A Comparative Study of MWT Architectures by Means of Numerical Simulations 195
Performance Analysis of Rear Point Contact Solar Cells by Three-Dimensional Numerical Simulation 195
Understandig Quasi-Ballistics Trasport in Nano-MOSFETS: Part I Scattering in the Channel and in the Drain 194
Towards energy autonomous ICs 194
Analysis of strained-silicon-on-insulator double-gate MOS structures 192
Understandig quasi-ballistics trasport in nano-MOSFETS: Part II Technology scaling along the ITRS 192
Loss analysis of silicon solar cells by means of numerical device simulation 192
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs 192
Two- and Three-Dimensional Numerical Simulation of Advanced Silicon Solar Cells 191
Theoretical study of the impact of rear interface passivation on MWT silicon solar cells 191
ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence 191
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs 190
Drain current computation in nanoscale nMOSFETs: Comparison of transport models 190
Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks 189
Analysis of Silicon Dioxide Interface Transition Region in MOS Structures 189
Particle-based Simulation of Conductance of Solid State Nanopores and Ion Channels 188
Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode 187
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 187
TCAD predictions of hot-electron injection in p-type LDMOS transistors 187
Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-Signal and RF applications 186
Influence of interface traps on the performance of Tunnel FETs 186
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition 185
Computationally efficient method for optical simulation of solar cells and their applications 185
Modeling and characterization of piezoelectric transducers by means of scattering parameters. Part II: Application on colloidal suspension monitoring 185
Understanding the Impact of the Doping Profiles on Selective Emitter Solar Cell by Two-Dimensional Numerical Simulation 183
Understanding the impact of double screen-printing on silicon solar cells by 2-D numerical simulations 183
P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime 182
Evaluation of ultra-thin double gate MOSFET for the 45 nm technology node 182
Analysis of two alternative scaling strategies for sub-30 nm Double-Gate SOI MOSFETs 182
Numerical Simulation and Modeling of Resistive and Recombination Losses in MWT Solar Cells 182
Optical simulation of ZnO/CdTe and c-Si/a-Si vertical nanowires solar cells 182
Open issues for the numerical simulation of silicon solar cells 181
Fabrication, simulation and experimental characterization of EWT solar cells with Deep Grooved Base contact 181
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs 181
Totale 24.429
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Categoria #
all - tutte 80.732
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 80.732
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.027 0 0 0 0 0 0 0 0 0 0 191 836
2021/20228.239 512 126 1.090 871 1.018 775 904 799 864 251 456 573
2022/20233.203 355 425 182 396 211 237 79 158 586 75 306 193
2023/20241.042 75 160 77 76 85 245 63 60 25 101 35 40
2024/20253.756 221 588 290 281 810 160 292 98 77 159 185 595
2025/20268.117 1.203 676 858 530 990 473 703 241 1.752 531 160 0
Totale 35.318