CAVALCOLI, DANIELA
 Distribuzione geografica
Continente #
NA - Nord America 7.378
AS - Asia 5.973
EU - Europa 5.462
SA - Sud America 387
AF - Africa 315
Continente sconosciuto - Info sul continente non disponibili 278
OC - Oceania 12
Totale 19.805
Nazione #
US - Stati Uniti d'America 7.271
GB - Regno Unito 1.842
CN - Cina 1.724
SG - Singapore 1.619
VN - Vietnam 1.289
IT - Italia 886
DE - Germania 686
FR - Francia 561
HK - Hong Kong 402
IN - India 362
UA - Ucraina 340
RU - Federazione Russa 306
BR - Brasile 290
SE - Svezia 239
IE - Irlanda 174
ZA - Sudafrica 118
JP - Giappone 117
EE - Estonia 106
BD - Bangladesh 86
TG - Togo 86
KR - Corea 77
PK - Pakistan 58
FI - Finlandia 55
AR - Argentina 47
BE - Belgio 43
CA - Canada 41
CH - Svizzera 41
SC - Seychelles 38
NL - Olanda 34
CI - Costa d'Avorio 32
TW - Taiwan 31
JO - Giordania 30
MX - Messico 30
TH - Thailandia 30
PL - Polonia 25
PH - Filippine 23
AT - Austria 19
TR - Turchia 19
ES - Italia 18
EC - Ecuador 17
GR - Grecia 17
IQ - Iraq 17
BG - Bulgaria 14
CZ - Repubblica Ceca 14
ID - Indonesia 14
MY - Malesia 14
TN - Tunisia 14
SA - Arabia Saudita 13
AU - Australia 11
IL - Israele 10
JM - Giamaica 9
CO - Colombia 8
CL - Cile 7
RO - Romania 7
LB - Libano 6
MA - Marocco 6
PY - Paraguay 6
UZ - Uzbekistan 6
AE - Emirati Arabi Uniti 5
EG - Egitto 5
HR - Croazia 5
BO - Bolivia 4
CU - Cuba 4
DZ - Algeria 4
LT - Lituania 4
PE - Perù 4
AZ - Azerbaigian 3
DO - Repubblica Dominicana 3
ET - Etiopia 3
HU - Ungheria 3
PA - Panama 3
PR - Porto Rico 3
PT - Portogallo 3
SK - Slovacchia (Repubblica Slovacca) 3
TT - Trinidad e Tobago 3
VE - Venezuela 3
BS - Bahamas 2
BY - Bielorussia 2
CR - Costa Rica 2
DK - Danimarca 2
GI - Gibilterra 2
KE - Kenya 2
KH - Cambogia 2
ME - Montenegro 2
MM - Myanmar 2
NG - Nigeria 2
NO - Norvegia 2
NP - Nepal 2
PS - Palestinian Territory 2
SI - Slovenia 2
SV - El Salvador 2
A1 - Anonimo 1
BA - Bosnia-Erzegovina 1
BF - Burkina Faso 1
BH - Bahrain 1
BT - Bhutan 1
BW - Botswana 1
DM - Dominica 1
GE - Georgia 1
GP - Guadalupe 1
Totale 19.509
Città #
Southend 1.700
Singapore 1.049
Ashburn 632
Fairfield 581
Santa Clara 570
San Jose 493
Chandler 408
Hong Kong 382
Wilmington 317
Ho Chi Minh City 316
Woodbridge 299
Princeton 290
Hanoi 281
Houston 281
Seattle 278
Ann Arbor 241
Jacksonville 220
Cambridge 216
Bologna 193
Beijing 183
Boardman 183
Dublin 173
Dong Ket 139
Hefei 137
Nanjing 136
Lauterbourg 126
Westminster 125
Dallas 121
Padova 120
New York 108
Los Angeles 105
Tokyo 97
Berlin 92
Milan 91
Lomé 86
Jinan 80
Shenyang 76
Medford 70
Council Bluffs 68
Buffalo 66
Turin 64
Saint Petersburg 62
The Dalles 58
Pune 54
Changsha 53
Hebei 52
Mülheim 51
Helsinki 45
Nanchang 44
Haiphong 43
Guangzhou 42
Seoul 42
Tongling 42
San Diego 41
Rome 38
Da Nang 37
Frankfurt am Main 37
Shanghai 37
Zhengzhou 37
Hangzhou 36
São Paulo 36
Leesburg 34
Redondo Beach 34
Bremen 33
Tianjin 33
Abidjan 32
Munich 30
Chengdu 29
Amman 28
Des Moines 26
Dearborn 24
Wuhan 24
Mahé 23
Jiaxing 22
Chicago 21
Ningbo 21
Brussels 19
Faisalabad 19
Falls Church 19
San Francisco 19
Shenzhen 19
Forlì 18
Hải Dương 18
Redwood City 17
San Venanzo 17
Yubileyny 17
Leuven 16
Norwalk 16
Brooklyn 15
Haikou 15
Naples 15
Phoenix 15
Taiyuan 15
Washington 15
Lanzhou 14
Nuremberg 14
Sofia 14
Warsaw 14
Can Tho 13
Paris 13
Totale 12.880
Nome #
Mechanical Reliability of Fullerene/Tin Oxide Interfaces in Monolithic Perovskite/Silicon Tandem Cells 319
Photoinduced Current Transient Spectroscopy on Metal Halide Perovskites: Electron Trapping and Ion Drift 248
Electronic transitions in low dimensional semiconductor structures measured by surface photovoltage spectroscopy 238
Investigation of LaVO3based compounds as a photovoltaic absorber 235
Surface Photovoltage Spectroscopy of Semiconductor Nanostructures 230
Electronic transitions at defect states in Cz p-type silicon 223
OPTICAL AND ELECTRICAL PROPERTIES OF HYDROGENATED MICROCRYSTALLINE SILICON FILMS 223
Laboratori Aperti del Dipartimento di Fisica 216
Annealing effects on SiOxNy thin films: Optical and morphological properties 210
Designing Ultraflexible Perovskite X-Ray Detectors through Interface Engineering 207
Advanced Characterization Techniques 206
Study of the physical properties of ZnS thin films deposited by RF sputtering 202
Band gap shift in Al1−xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy 201
Radiation Hardness and Defects Activity in PEA2PbBr4 Single Crystals 200
Surface Photovoltage studies of surface and defect states in semiconductors 196
Multi-characterization study of interface passivation quality of amorphous sub-stoichiometric silicon oxide and silicon oxynitride layers for photovoltaic applications 192
4H-SiC band structure investigated by surface photovoltage spectroscopy 186
Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage 186
I Corsi Laboratori del Dipartimento di Fisica, per studenti e insegnanti delle scuole superiori. 184
Transport properties of Si based nanocrystalline films investigated by c-AFM 182
Band bowing and Si donor levels in InGaN layers investigated by surface photo voltage spectroscopy 180
Defective State Studies in III-Nitride Alloys by Surface Photovoltage Spectroscopy 179
Surface and Defect States in Semiconductors Investigated by Surface PhotovoltageDefects in Semiconductors 176
Progetto Lauree Scientifiche 175
Characterization of electrical nanoscale properties of Si-based thin films for photovoltaic applications 173
Material Science in Semiconductor Processing 173
Progetto lauree Scientifiche-Fisica 170
Conferenze divulgative presso scuole/Enti nell'ambito del Progetto Lauree Scientifiche 170
Native Silicon Oxide Properties Determined by Doping 167
Nanocrack-induced leakage current in AlInN/AlN/GaN 166
Electrical properties of dislocations in III-Nitrides 164
On the Interaction of Dislocations with Impurities in Silicon 164
Nanocrystal formation in silicon oxy-nitride films for photovoltaic applications: Optical and electrical properties 164
Electrical properties of extended defects in III-nitrides 164
Degeneracy and instability of nanocontacts between conductive tips and hydrogenated nanocrystalline Si surfaces in conductive atomic force microscopy 162
Affidabilità e condizioni di utilizzo di Light Emitting Diodes, LED, su GaN per illuminazione a stato solido 160
Micro- and nano-structures in silicon studied by DLTS and scanning probe methods 157
Conduction Mechanisms in Al0.84In0.16N/AlN/GaN investigated at the nanoscale 157
Mono and multi-crystalline Silicon characterization by Non-Contacting Techniques 157
Surface Photovoltage Spectroscopy Analyses of Cd1-x ZnxTe 156
Percorsi di ricerca. La fisica attraversa Bologna 155
Role of oxygen and nitrogen in n-type microcrystalline silicon carbide grown by hot wire chemical vapor deposition 155
Optoelectronic properties of nanoporous Ge layers investigated by surface photovoltage spectroscopy 155
Annealing effects on silicon oxy-nitride thin films: optical, structural and morphological properties 154
Electrical characterization at the nanoscale of Si-based thin films for photovoltaic applications 154
Electrical properties of silicon carbide/silicon rich carbide multilayers for photovoltaic applications 152
Electrode distance induced changes in the growth of SiOxNy thin films for photovoltaic applications 151
Defect States in nc-Si:H investigated by surface photovoltage spectroscopy 151
Iron related precipitates in multicrystalline silicon by conductive atomic force microscopy 150
Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures 148
Nanocrystalline Silicon Films as Multifunctional Material for Optoelectronic and Photovoltaic Applications 147
Preparing the way for doping wurtzite silicon nanowires while retaining the phase 147
Proceedings of the 23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia, 2008 146
Fisica della Materia 145
Conduction mechanisms in silicon nano-dots/SiC:Si systems investigated by macroscopical and microscopical analyses 143
Electrical activity of deep traps in high resistivity CdTe: Spectroscopic characterization 143
Indium segregation in AlInN/AlN/GaN heterostructures 143
Mobility-limiting mechanisms in polar semiconductor heterostructures 142
Nanostructured surfaces investigated by quantitative morphological studies 142
Thermionic emission from the 2DEG assisted by image-charge-induced barrier lowering in AlInN/AlN/GaN heterostructures 141
Photocurrent and Surface Photovoltage Spectroscopy Investigations of CdTe-Based Compounds 141
Minority Carrier Diffusion Lengths in Multi-crystalline Silicon Wafers and Solar Cells 140
Strain distribution and defect analysis in III-nitrides by dynamical AFM analysis 139
Surface Photovoltage Spectroscopy. Method and Applications. 138
Nanopore formation induced by ion-implantation in Ge: optical properties 138
Corsi Laboratori al Dipartimento di Fisica, attività del PLS2 137
Nanostructures in Silicon Investigated by Atomic Force Microscopy and Surface Photovoltage Spectroscopy 137
Influence of Dynamic Temperature Adjustments During Growth on the Material Properties of CZT Radiation Devices 135
Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors 135
Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures 135
X-Ray-Induced Modification of the Photophysical Properties of MAPbBr3Single Crystals 134
Investigation of the properties of In-related alloys by AFM 133
Optical properties of ion-implanted nanoporous Ge 132
Surface photovoltage spectroscopy characterization of Al1-xInxN/AlN/GaN heterostructures 132
Defect states in Czochalski p-type silicon: the role of oxygen and dislocations 132
Surface properties of AlInGaN/GaN heterostructure 132
Hydrogenated nanocrystalline silicon thin films studied by scanning force microscopy. 131
Hydrogenated nanocrystalline silicon investigated by conductive atomic force microscopy 130
Electronic states related to dislocations in silicon 130
Al1-xInxN/AlN/GaN Heterostructures Investigated by Surface Photovoltage Spectroscopy 128
Optical and electrical characterization of ternary and quaternary gallium nitride based alloys 128
Photocurrent and Surface Photovoltage Spectroscopy investigations of CdTe-based compounds 127
Defect States in Hydrogenated- nanocrystalline Si thin films 127
Le attività del Progetto Lauree Scientifiche, sezione fisica, a Bologna. 127
Al1-xInxN/AlN/GaN heterostructures studied by Surface Photovoltage Spectroscopy 126
Annealing and oxygen role in the structural, optical and electrical properties of nc-SiOxNy 126
Current-voltage measurement of AlxIn1-xN/AlN/GaN heterostructures 125
Annealing induced oxygen relocation in silicon oxy-nitride thin films 125
Conduction mechanisms in doped and undoped nc-Si for PV 124
Defect investigation in Al0.87In0.13N/AlN/GaN heterostructures by scanning force microscopy methods 123
The electrical conductivity of hydrogenated nanocrystalline silicon investigated at the nanoscale 123
Electrical properties of silicon nanodots embedded in a SiC matrix for photovoltaic applications 122
Optical Properties of Nanoporous Germanium Thin Films 120
Electrical Properties of Quantum Wells in III-NITRIDE Alloys and the Role of Defects 119
Experimental Evidence of Dislocation Related Shallow States in p-Type Si 119
Preface of the Special Issue: Special Issue: III-Nitride Nanostructures Preface 119
STUDY OF ASYMMETRIES OF CZT DEVICES INVESTIGATED USING PICTS, RBS, SPS, AND GAMMA RAY SPECTROSCOPIES 119
Conduction mechanisms in doped and undoped nc-Si for PV 118
Cap 10, Superconduttività, Cap11 Diamagnetismo e Paramagnetismo 118
Electrical and structural properties of p-type nanocrystalline silicon grown by LEPECVD for photovoltaic applications 117
Totale 15.723
Categoria #
all - tutte 56.693
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 300
Totale 56.993


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.032 206 82 166 94 239 135 78 146 81 92 286 427
2022/20232.168 268 347 153 315 105 100 63 125 310 66 204 112
2023/2024719 42 107 58 50 76 203 39 30 15 42 24 33
2024/20252.804 85 448 225 137 749 121 177 52 40 67 104 599
2025/20265.986 309 548 618 366 637 360 638 312 1.141 418 261 378
2026/2027133 133 0 0 0 0 0 0 0 0 0 0 0
Totale 19.805