We report on MOCVD grown Al1-xInxN/AlN/GaN heterostructures with different AlN (interlayer) thicknesses, investigated by Surface Photovoltage Spectroscopy. The different contributions to SPV spectra from all the layers present within the structure have been analyzed. Below the GaN band gap SPV analysis has been performed, and the observed peaks related to red, yellow and green defect states in GaN. The density of the two dimensional electron gas (2DEG) forming at the interface has been measured. A band gap shift has been detected and its dependence on the 2DEG electron density at the AlN/GaN interface has been analyzed on the basis of the Moss Burstein and renormalization effects.
S. Pandey, D. Cavalcoli, B. Fraboni, A.Cavallini (2012). Surface photovoltage spectroscopy characterization of Al1-xInxN/AlN/GaN heterostructures. PHYSICA STATUS SOLIDI. C, 9(3-4), 693-696 [10.1002/pssc.201100359].
Surface photovoltage spectroscopy characterization of Al1-xInxN/AlN/GaN heterostructures
CAVALCOLI, DANIELA;FRABONI, BEATRICE;CAVALLINI, ANNA
2012
Abstract
We report on MOCVD grown Al1-xInxN/AlN/GaN heterostructures with different AlN (interlayer) thicknesses, investigated by Surface Photovoltage Spectroscopy. The different contributions to SPV spectra from all the layers present within the structure have been analyzed. Below the GaN band gap SPV analysis has been performed, and the observed peaks related to red, yellow and green defect states in GaN. The density of the two dimensional electron gas (2DEG) forming at the interface has been measured. A band gap shift has been detected and its dependence on the 2DEG electron density at the AlN/GaN interface has been analyzed on the basis of the Moss Burstein and renormalization effects.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
