ABSTRACT: We studied the passivation effect of plasma deposited intrinsic and doped hydrogenated amorphous silicon layers on industrial grade, n-type, 1 Ohm cm multicrystalline silicon, aimed at the fabrication of Heterojunction (HJ) solar cells based on such material. The investigated variables include the process temperature, hydrogen dilution of silane during the intrinsic layer deposition, and passivating layer thickness. The structure of the passivating layers was analysed by optical measurements. Surface photovoltage and quasi-steady state photoconductance were used to characterize untreated and treated wafers. Thin a-Si:H layers exhibited the best passivating performance. Keywords: Heterojunction, Multicrystalline Silicon, Passivation
A.S. Asha, M. Canino, C. Summonte, S. Binetti, M. Acciarri, J. Libal, et al. (2008). Proceedings of the 23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia, 2008. MUNICH : DRIP.
Proceedings of the 23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia, 2008
CAVALCOLI, DANIELA;CAVALLINI, ANNA
2008
Abstract
ABSTRACT: We studied the passivation effect of plasma deposited intrinsic and doped hydrogenated amorphous silicon layers on industrial grade, n-type, 1 Ohm cm multicrystalline silicon, aimed at the fabrication of Heterojunction (HJ) solar cells based on such material. The investigated variables include the process temperature, hydrogen dilution of silane during the intrinsic layer deposition, and passivating layer thickness. The structure of the passivating layers was analysed by optical measurements. Surface photovoltage and quasi-steady state photoconductance were used to characterize untreated and treated wafers. Thin a-Si:H layers exhibited the best passivating performance. Keywords: Heterojunction, Multicrystalline Silicon, PassivationI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
