We report on the current transport properties of AlInN/AlN/GaN high electron mobility transitors with different AlN interlayer thickness. We determined the two-dimensional electron gas (2DEG) properties directly from simple current-voltage measurements, carried out with two Schottky contacts in a planar back-to-back configuration. A model has been developed to straightforwardly extract the 2DEG electrical properties from room-temperature current-voltage curves, and we correlated them to the effects of varying AlN thickness. The 2DEG properties calculated from current-voltage analyses are in very good agreement with results obtained with standard Hall measurements.
S. Pandey, B Fraboni, D.Cavalcoli, A. Minj, A.Cavallini (2011). Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures. APPLIED PHYSICS LETTERS, 99, 012111-012114 [10.1063/1.3608162].
Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures
FRABONI, BEATRICE;CAVALCOLI, DANIELA;CAVALLINI, ANNA
2011
Abstract
We report on the current transport properties of AlInN/AlN/GaN high electron mobility transitors with different AlN interlayer thickness. We determined the two-dimensional electron gas (2DEG) properties directly from simple current-voltage measurements, carried out with two Schottky contacts in a planar back-to-back configuration. A model has been developed to straightforwardly extract the 2DEG electrical properties from room-temperature current-voltage curves, and we correlated them to the effects of varying AlN thickness. The 2DEG properties calculated from current-voltage analyses are in very good agreement with results obtained with standard Hall measurements.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
