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EnglishWe report on the current transport properties of AlInN/AlN/GaN high electron mobility transitors with different AlN interlayer thickness. We determined the two-dimensional electron gas (2DEG) properties directly from simple current-voltage measurements, carried out with two Schottky contacts in a planar back-to-back configuration. A model has been developed to straightforwardly extract the 2DEG electrical properties from room-temperature current-voltage curves, and we correlated them to the effects of varying AlN thickness. The 2DEG properties calculated from current-voltage analyses are in very good agreement with results obtained with standard Hall measurements.
| Titolo: | Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures | |
| Autore/i: | S. Pandey; FRABONI, BEATRICE; CAVALCOLI, DANIELA; A. Minj; CAVALLINI, ANNA | |
| Autore/i Unibo: | ||
| Anno: | 2011 | |
| Rivista: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1063/1.3608162 | |
| Abstract: | We report on the current transport properties of AlInN/AlN/GaN high electron mobility transitors with different AlN interlayer thickness. We determined the two-dimensional electron gas (2DEG) properties directly from simple current-voltage measurements, carried out with two Schottky contacts in a planar back-to-back configuration. A model has been developed to straightforwardly extract the 2DEG electrical properties from room-temperature current-voltage curves, and we correlated them to the effects of varying AlN thickness. The 2DEG properties calculated from current-voltage analyses are in very good agreement with results obtained with standard Hall measurements. | |
| Data prodotto definitivo in UGOV: | 2013-06-17 17:07:15 | |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
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http://hdl.handle.net/11585/105002
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