We report on the current transport properties of AlInN/AlN/GaN high electron mobility transitors with different AlN interlayer thickness. We determined the two-dimensional electron gas (2DEG) properties directly from simple current-voltage measurements, carried out with two Schottky contacts in a planar back-to-back configuration. A model has been developed to straightforwardly extract the 2DEG electrical properties from room-temperature current-voltage curves, and we correlated them to the effects of varying AlN thickness. The 2DEG properties calculated from current-voltage analyses are in very good agreement with results obtained with standard Hall measurements.
Titolo: | Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures |
Autore/i: | S. Pandey; FRABONI, BEATRICE; CAVALCOLI, DANIELA; A. Minj; CAVALLINI, ANNA |
Autore/i Unibo: | |
Anno: | 2011 |
Rivista: | |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1063/1.3608162 |
Abstract: | We report on the current transport properties of AlInN/AlN/GaN high electron mobility transitors with different AlN interlayer thickness. We determined the two-dimensional electron gas (2DEG) properties directly from simple current-voltage measurements, carried out with two Schottky contacts in a planar back-to-back configuration. A model has been developed to straightforwardly extract the 2DEG electrical properties from room-temperature current-voltage curves, and we correlated them to the effects of varying AlN thickness. The 2DEG properties calculated from current-voltage analyses are in very good agreement with results obtained with standard Hall measurements. |
Data prodotto definitivo in UGOV: | 2013-06-17 17:07:15 |
Appare nelle tipologie: | 1.01 Articolo in rivista |